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A semiconductor structure including a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is located near a circuit of the IC chip, and a metal layer in a bottom portion of the recess, wherein a portion of the silicon substrate is located below the metal layer in

A semiconductor structure including a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is located near a circuit of the IC chip, and a metal layer in a bottom portion of the recess, wherein a portion of the silicon substrate is located below the metal layer in the bottom portion of the recess and above the circuit.

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1. A semiconductor structure comprising: a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is directly above and vertically aligned with a circuit of the IC chip embedded within the silicon substrate; anda metal layer positioned only along a bottom surface of

1. A semiconductor structure comprising: a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is directly above and vertically aligned with a circuit of the IC chip embedded within the silicon substrate; anda metal layer positioned only along a bottom surface of the recess above and in direct contact with an oxidized portion of the silicon substrate, the oxidized portion of the silicon substrate extends from a bottom surface of the metal layer to the circuit, wherein the oxidized portion of the silicon substrate is in direct contact with the circuit, such direct contact damages the circuit and renders the IC chip inoperable,wherein a thickness of the oxidized portion of the silicon substrate is directly proportional to a shelf life of the IC chip, the shelf life is equal to the distance between a bottom surface of the metal layer and a top surface of the circuit divided by an oxidation rate of the oxidized portion of the substrate. 2. The semiconductor structure of claim 1, further comprising: a heat sink above the silicon substrate, wherein the heat sink includes a recess that exposes the metal layer. 3. The semiconductor structure of claim 1, wherein the metal layer is exposed to an oxygen-containing environment. 4. The semiconductor structure of claim 3, wherein the oxygen-containing environment comprises an oxygen-containing fluid such as air. 5. The semiconductor structure of claim 3, wherein the oxygen-containing environment comprises a closed chamber containing pressurized oxygen. 6. The semiconductor structure of claim 1, wherein the metal layer comprises copper. 7. The semiconductor structure of claim 1, wherein a depth of the recess is based on a desired shelf life of the IC chip and a distance between an upper surface of the silicon substrate and an uppermost portion of the circuit, wherein the depth of the recess is measured from the upper surface of the silicon substrate. 8. A semiconductor structure comprising: a recess within a silicon substrate of an integrated circuit (IC) chip, wherein the recess is directly above and vertically aligned with a circuit of the IC chip embedded within the silicon substrate, the circuit is a critical component of the IC chip and without it the IC chip is inoperable;a copper layer positioned only along a bottom surface of the recess above and in direct contact with an oxidized portion of the silicon substrate, the oxidized portion of the silicon substrate extends from a bottom surface of the metal layer to at least the circuit, wherein the circuit is damaged due to direct contact between it and the oxidized portion of the silicon substrate thus rendering the IC chip inoperable,wherein a thickness of the oxidized portion of the silicon substrate is directly proportional to a shelf life of the IC chip, the shelf life is equal to the distance between a bottom surface of the metal layer and a top surface of the circuit divided by an oxidation rate of the oxidized portion of the substrate; anda heat sink above the silicon substrate, wherein the heat sink includes a hole aligned with the recess leaving the copper layer exposed to air. 9. The semiconductor structure of claim 8, wherein the oxidized portion of the silicon substrate extends beneath the circuit. 10. The semiconductor structure of claim 8, wherein the oxidized portion comprises silicon dioxide. 11. A semiconductor structure comprising: an integrated circuit (IC) chip bonded to a circuit board with a plurality of solder bump connections, wherein the plurality of solder bump connections join a bottom of the IC chip to a top of the circuit board, the IC chip further comprising: a silicon substrate having a recess extending from a top surface of the IC chip down in a direction towards the bottom of the IC chip,a circuit positioned above the bottom of the IC chip and directly below the recess, the circuit is a critical component of the IC chip and without it the IC chip is inoperable;a copper layer in direct contact with at least a bottom surface of the recess;an oxidized portion of the silicon substrate in direct contact with and extending down from a bottom surface of the copper layer to at least the circuit, wherein the circuit is damaged due to direct contact between it and the oxidized portion of the silicon substrate thus rendering the IC chip inoperable; anda heat sink attached to the top surface above the silicon substrate, wherein the heat sink includes a hole aligned with the recess such that the copper layer is exposed to air. 12. The semiconductor structure of claim 11, wherein a vertical thickness of the oxidized portion of the silicon substrate is directly proportional to a shelf life of the IC chip, the shelf life is equal to the distance between a bottom surface of the metal layer and a top surface of the circuit divided by an oxidation rate of the oxidized portion of the substrate. 13. The semiconductor structure of claim 11, wherein the oxidized portion of the silicon substrate extends beneath the circuit. 14. The semiconductor structure of claim 11, wherein the oxidized portion of the silicon substrate extends from the bottom surface of the copper layer to a bottom surface of the IC chip. 15. The semiconductor structure of claim 11, wherein the oxidized portion comprises silicon dioxide.