초록 ▼

Aspects of the invention are directed to a single chip igniter such that it is possible to realize a reduction in operating voltage, an increase in noise tolerance, a reduction in size, and a reduction in cost. By reducing the gate threshold voltage of a MOS transistor, and reducing the operating vo

Aspects of the invention are directed to a single chip igniter such that it is possible to realize a reduction in operating voltage, an increase in noise tolerance, a reduction in size, and a reduction in cost. By reducing the gate threshold voltage of a MOS transistor, and reducing the operating voltages of a current limiter circuit, an overheat detector circuit, a timer circuit, an overvoltage protection circuit, an input hysteresis circuit, and the like, it is possible to reduce the operating voltage of a single chip igniter. In some aspects of the invention, the effective gate voltage of the MOS transistor is 1V or more, and the channel length of the MOS transistor is 4 μm or less. Also, in some aspects of the invention, the thickness of a gate oxide film of the MOS transistor is 5 nm or more, 25 nm or less.

대표청구항 ▼

1. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to the gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor,all disposed on the same semiconductor substrate, whereinan input voltage into the gate terminal of

1. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to the gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor,all disposed on the same semiconductor substrate, whereinan input voltage into the gate terminal of the single chip igniter is the power supply voltage of the control circuit and a control signal of the MOS transistor, the minimum value of the input voltage is less than 3.5V, and whereinthe effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1V or less, andwhen the channel length of the MOS transistor configuring the single chip igniter is L (cm) and the impurity concentration per unit volume of the channel region of the MOS transistor is N (cm−3), L≦4×10−4×(10−17)1/3×N1/3. 2. The single chip igniter according to claim 1, wherein the minimum value of the input voltage is less than 2.5V. 3. The single chip igniter according to claim 1, wherein the minimum value of the input voltage is less than 2.0V. 4. The single chip igniter according to claim 1, wherein the channel length of the MOS transistor is 4 μm or less. 5. The single chip igniter according to claim 1, wherein the thickness of a gate oxide film of the MOS transistor is 5 nm or more, 25 nm or less. 6. The single chip igniter according to claim 1, wherein, when a cell of the MOS transistor is of a stripe form, the density of cells in a direction perpendicular to the longitudinal axes of the stripes is 5×102 per cm or more. 7. The single chip igniter according to claim 1, wherein the MOS transistor configuring the single chip igniter is of a planar gate structure or a trench structure. 8. The single chip igniter according to claim 1, wherein the control circuit is one or a plurality of circuits selected from a current limiter circuit, an overheat detector circuit, a timer circuit, an overvoltage protection circuit, and an input hysteresis circuit. 9. The single chip igniter according to claim 1, wherein the MOS transistor is an insulated gate bipolar transistor. 10. An internal combustion engine ignition device using the single chip igniter according to claim 1. 11. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to the gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor,all disposed on the same semiconductor substrate, whereinan input voltage input into the gate terminal of the single chip igniter becomes the power supply voltage of the control circuit and a control signal of the MOS transistor, and the minimum value of the input voltage is less than 3.5V, andwherein,when the channel length of the MOS transistor configuring the single chip igniter is L (cm) and the impurity concentration per unit volume of the channel region of the MOS transistor is N (cm−3), L≦4×10−4×(10−17)1/3×N1/3. 12. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to the gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor,all disposed on the same semiconductor substrate, whereinan input voltage into the gate terminal of the single chip igniter is the power supply voltage of the control circuit and a control signal of the MOS transistor, the minimum value of the input voltage is less than 3.5V,the minimum operating voltage of the control circuit is 1.5V or less, and the control circuit is configured of two inverter circuits “configured of two MOSFET stages connected in series, and whereinthe effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1V or less, andwhen the channel length of the MOS transistor configuring the single chip igniter is L (cm) and the impurity concentration per unit volume of the channel region of the MOS transistor is N (cm−3), L≦4×10−4×(10−17)1/3×N1/3. 13. The single chip igniter according to claim 12, wherein the minimum value of the input voltage is less than 2.5V. 14. The single chip igniter according to claim 12, wherein the minimum value of the input voltage is less than 2.0V. 15. The single chip igniter according to claim 12, wherein the channel length of the MOS transistor is 4 μm or less. 16. The single chip igniter according to claim 12, wherein the effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1.5V or less, and the thickness of a gate oxide film of the MOS transistor is 5 nm or more, 25 nm or less. 17. The single chip igniter according to claim 12, wherein, when a cell of the MOS transistor is of a stripe form, the density of cells in a direction perpendicular to the longitudinal axes of the stripes is 5×102 per cm or more. 18. The single chip igniter according to claim 12, wherein the MOS transistor configuring the single chip igniter is of a planar gate structure or a trench structure. 19. The single chip igniter according to claim 12, wherein the minimum operating voltage of the control circuit is 1V or more, and the control circuit is configured of a two-stage inverter circuit. 20. The single chip igniter according to claim 12, wherein the control circuit is one or a plurality of circuits selected from a current limiter circuit, an overheat detector circuit, a timer circuit, an overvoltage protection circuit, and an input hysteresis circuit. 21. The single chip igniter according to claim 12, wherein the MOS transistor is an insulated gate bipolar transistor. 22. An internal combustion engine ignition device using the single chip igniter according to claim 12. 23. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to the gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor,all disposed on the same semiconductor substrate, whereinan input voltage into the gate terminal of the single chip igniter is the power supply voltage of the control circuit and a control signal of the MOS transistor, the minimum value of the input voltage is less than 3.5V,the minimum operating voltage of the control circuit is 1.5V or less, and the control circuit is configured of two inverter circuits configured of two MOSFET stages connected in series, andwherein,when the channel length of the MOS transistor configuring the single chip igniter is L (cm) and the impurity concentration per unit volume of the channel region of the MOS transistor is N (cm−3), L≦4×10−4×(10−17)1/3×N1/3. 24. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to a gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor, the control circuit including a first capacitor,all disposed on the same semiconductor substrate, whereinan input voltage into the gate terminal of the single chip igniter is the power supply voltage of the control circuit and a control signal of the MOS transistor, the minimum value of the input voltage is less than 3.5V, anda first side of a second capacitor is connected to gate wiring, the gate wiring connected to the gate terminal via a resistor and directly connected to the gate of the MOS transistor, and a second side of the second capacitor is connected to the ground,wherein,when the channel length of the MOS transistor configuring the single chip igniter is L (cm) and the impurity concentration per unit volume of the channel region of the MOS transistor is N (cm−3), L≦4×10−4×(10−17)1/3×N1/3. 25. The single chip igniter according to claim 24, wherein the minimum value of the input voltage is less than 2.5V. 26. The single chip igniter according to claim 24, wherein the minimum value of the input voltage is less than 2.0V. 27. The single chip igniter according to claim 24, wherein the effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1V or less, and the impurity dose per unit volume of a channel region of the MOS transistor is 1×1017/cm3 or less. 28. The single chip igniter according to claim 24, wherein the effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1V or less, and the channel length of the MOS transistor is 4 μm or less. 29. The single chip igniter according to claim 24, wherein the effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1V or less, and the thickness of a gate oxide film of the MOS transistor is 5 nm or more, 25 nm or less. 30. The single chip igniter according to claim 24, wherein the effective gate threshold voltage of the MOS transistor configuring the single chip igniter is 1V or less and, when a cell of the MOS transistor is of a stripe form, the density of cells in a direction perpendicular to the longitudinal axes of the stripes is 5×102 per cm or more. 31. The single chip igniter according to claim 24, wherein the MOS transistor configuring the single chip igniter is of a planar gate structure or a trench structure. 32. The single chip igniter according to claim 24, wherein capacitors are connected between the high potential side of the control circuit power supply and the ground. 33. The single chip igniter according to claim 24, wherein the minimum operating voltage of the control circuit is 1V or more, and the control circuit is configured of two serially connected MOSFET inverting stages. 34. The single chip igniter according to claim 24, wherein the control circuit is a current limiter circuit, an overheat detector circuit, or both the current limiter circuit and the overheat detector circuit. 35. The single chip igniter according to claim 24, wherein the MOS transistor is an insulated gate bipolar transistor. 36. An internal combustion engine ignition device using the single chip igniter according to claim 24. 37. A single chip igniter, comprising: a MOS transistor;a gate terminal electrically connected to the gate of the MOS transistor; anda control circuit that limits the gate voltage of the MOS transistor,all disposed on the same semiconductor substrate, whereinan input voltage into the gate terminal of the single chip igniter is the power supply voltage of the control circuit and a control signal of the MOS transistor, the minimum value of the input voltage is less than 3.5V, anda capacitor is connected between gate wiring connecting the gate terminal configuring the single chip igniter and the gate of the MOS transistor and the ground,wherein,when the channel length of the MOS transistor configuring the single chip igniter is L (cm) and the impurity concentration per unit volume of the channel region of the MOS transistor is N (cm−3), L≦4×10−4×(10−17)1/3×N1/3.