[특허]Method for producing graphene oxide with tunable gap

Method for producing graphene oxide with tunable gap 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-051/40 H01L-029/08 H01L-021/02 C01B-031/04 B82Y-030/00 B82Y-040/00
출원번호	US-0095454 (2013-12-03)
등록번호	US-9449816 (2016-09-20)
발명자 / 주소	Aria, Adrianus Indrat Gharib, Morteza Gani, Adi Wijaya
출원인 / 주소	CALIFORNIA INSTITUTE OF TECHNOLOGY
대리인 / 주소	One LLP
인용정보	피인용 횟수 : 0 인용 특허 : 36

초록 ▼

A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.

대표청구항 ▼

1. A method of fabricating an sp2 structure graphene oxide material comprising: providing an sp2 structure graphene layer; andoxidizing at least a portion of the sp2 structure graphene layer with a dry oxidation technique for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21% such that the oxidation is confined to the graphene layer. 2. The method of claim 1, wherein, prior to the dry oxidation treatment, at least one portion of the sp2 structure graphene is masked to prevent oxidation in the at least one portion. 3. The method of claim 2, wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp2 structure graphene portions, each of said portions having a desired band gap. 4. The method of claim 3, wherein each of the portions have different band gaps. 5. The method of claim 1, wherein the dry oxidation treatment is a plasma oxidation treatment. 6. The method of claim 5, wherein the plasma oxidation treatment used is a remote indirect plasma oxidation treatment. 7. The method of claim 1, wherein the dry oxidation treatment applied is a UV/Ozone oxidation treatment. 8. The method of claim 1, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9%. 9. The method of claim 1, wherein the band gap is proportional to the concentration of oxidation within the sp2 structure graphene layer. 10. The method of claim 1, wherein the band gap range from 0. 1 to 2.5 eV. 11. The method of claim 1, wherein the sp2 structure graphene is deposited by chemical vapor deposition. 12. The method of claim 1, wherein the sp2 structure graphene is deposited by micromechanical exfoliation. 13. A method of fabricating an sp2 structure graphene oxide material comprising: providing an sp2 structure graphene layer;masking at least one portion of the sp2 structure graphene material; andoxidizing at least a portion of the a sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21% such that the oxidation is confined to the sp2 structure graphene layer. 14. The method of claim 13, wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp2 structure graphene portions, each of said portions having a desired band gap. 15. The method of claim 14, wherein each of the portions have different band gaps. 16. The method of claim 13, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer. 17. The method of claim 13, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9%. 18. A method of fabricating an sp2 structure graphene oxide material comprising: providing an sp2 structure graphene layer;masking at least one portion of the sp2 structure graphene material;oxidizing at least a portion of the unmasked sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21%, such that the oxidation is confined to the sp2 structure the oxidation is confined to the graphene layer; andrepeating and iterating the masking and oxidation to obtain a plurality of distinct sp2 structure graphene oxide layers, each having different band gaps. 19. The method of claim 18, wherein each of the portions have different band gaps. 20. The method of claim 18, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer. 21. The method of claim 18, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9%.

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