Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into
Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
대표청구항▼
1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate includes an exposed titanium nitride region and a region comprising an exposed second material, the method comprising: flowing a fluorine-containing precur
1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate includes an exposed titanium nitride region and a region comprising an exposed second material, the method comprising: flowing a fluorine-containing precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents;flowing the plasma effluents through a showerhead positioned between the remote plasma region and the substrate processing region;flowing at least one additional precursor into the substrate processing region; andetching the exposed titanium nitride region with the precursor combination including the plasma effluents, wherein the titanium nitride is etched at a faster rate than the exposed second material, wherein the substrate processing region is plasma-free during the etching process, and wherein the exposed second material comprises at least one of silicon oxide, silicon nitride, and tungsten. 2. The method of claim 1, wherein the at least one additional precursor is selected from the group consisting of helium, argon, and molecular hydrogen (H2). 3. The method of claim 1, wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride, and xenon difluoride. 4. The method of claim 1, wherein the plasma in the remote plasma region is a capacitively-coupled plasma. 5. The method of claim 1, wherein the at least one additional precursor consists of either or both of helium and argon. 6. The method of claim 5, wherein the precursor combination including plasma effluents is substantially devoid of hydrogen. 7. The method of claim 5, wherein the exposed second material comprises silicon oxide and the selectivity of the etching operation (exposed titanium nitride region:exposed silicon oxide region) is greater than or about 5:1. 8. The method of claim 5, wherein the substrate temperature is maintained at or below about 50° C. during the etch process. 9. The method of claim 8, wherein the substrate temperature is maintained at or below about 10° C. during the etch process. 10. The method of claim 1, wherein the at least one additional precursor comprises hydrogen. 11. The method of claim 10, wherein the exposed second material comprises tungsten and the selectivity of the etching operation (exposed titanium nitride region:exposed tungsten region) is greater than or about 50:1. 12. The method of claim 11, wherein the selectivity of the etching operation (exposed titanium nitride region:exposed tungsten region) is greater than or about 100:1. 13. The method of claim 11, wherein the patterned substrate further comprises an exposed silicon nitride region and the selectivity of the etching operation (exposed titanium nitride region:exposed silicon nitride region) is greater than or about 10:1. 14. The method of claim 11, wherein the patterned substrate further comprises an exposed silicon oxide region and the selectivity of the etching operation (exposed titanium nitride region:exposed silicon oxide region) is greater than or about 5:1. 15. The method of claim 11, wherein the patterned substrate further comprises an exposed tantalum nitride region and the selectivity of the etching operation (exposed titanium nitride region:exposed tantalum nitride region) is greater than or about 10:1. 16. The method of claim 10, wherein the substrate temperature is maintained at or above about 50° C. during the etch process. 17. The method of claim 16, wherein the substrate temperature is maintained at or above about 200° C. during the etch process. 18. The method of claim 10, wherein the hydrogen is flowed into the substrate processing region without being first excited in a remote plasma. 19. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate includes an exposed titanium nitride region and a region comprising an exposed second material, the method comprising: flowing a fluorine-containing precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents;flowing the plasma effluents through a showerhead positioned between the remote plasma region and the substrate processing region;flowing molecular hydrogen (H2) into the substrate processing region; andetching the exposed titanium nitride region with the precursor combination including the plasma effluents, wherein the titanium nitride is etched at a faster rate than the exposed second material.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (671)
David T. Or ; Keith K. Koai ; Fufa Chen ; Lawrence C. Lei, 300 mm CVD chamber design for metal-organic thin film deposition.
Cote William J. (Essex Junction VT) Holland Karey L. (Essex Junction VT) Wright Terrance M. (Williston VT), Anisotropic etch process for tungsten metallurgy.
Kao Yeh-Jen ; Chang Fong M. ; Majewski Robert B. ; Parks John ; Wanamaker David ; Wang Yen-Kun, Apparatus and method for depositing low K dielectric materials.
Beyer Christian,DEX ; Trenton Keith ; Gregor Mariusch,DEX ; Stolle Robert,DEX ; Bahnen Rudolph,DEX ; Plugge Anja,DEX ; Frings Heinz,DEX ; Ronthaler Karl-Heinz,DEX ; Smith Dennis ; Patel Jayesh, Apparatus and method for regulating a pressure in a chamber.
Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) LeBlanc Rene E. (East Haven CT), Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating suscept.
Gadgil Prashant ; Flanner Janet M. ; Jordan John P. ; Doe Adrian ; Chebi Robert, Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer.
Knowles Steven C. (Seattle WA) Kull Alan E. (Seattle WA) Butler George W. (Seattle WA) King David O. (Woodinville WA), Apparatus for synthesizing diamond films utilizing an arc plasma.
Draeger, Nerissa; te Nijenhuis, Harald; Meinhold, Henner; van Schravendijk, Bart; Nittala, Lakshmi, Atomic layer removal process with higher etch amount.
Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Barrier formation using novel sputter deposition method with PVD, CVD, or ALD.
Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
Mizukami Masami,JPX ; Mochizuki Takashi,JPX ; Kawano Yumiko,JPX, CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed.
Chen Ling ; Ganguli Seshadri ; Zheng Bo ; Wilson Samuel ; Marcadal Christophe, CVD method of depositing copper films by using improved organocopper precursor blend.
Wang David N. (Cupertino CA) White John M. (Hayward CA) Law Kam S. (Union City CA) Leung Cissy (Union City CA) Umotoy Salvador P. (Pittsburg CA) Collins Kenneth S. (San Jose CA) Adamik John A. (San R, CVD of silicon oxide using TEOS decomposition and in-situ planarization process.
Yang, Jang Gyoo; Hoffman, Daniel J.; Carducci, James D.; Buchberger, Jr., Douglas A.; Hagen, Melissa; Miller, Matthew L.; Chiang, Kang-Lie; Delgadino, Gerardo A., Capacitively coupled plasma reactor with uniform radial distribution of plasma.
Brummett Charles Roscoe (Harrisburg PA) Shaak Ray Ned (Lebanon PA) Andrews Daniel Marshall (Harrisburg PA), Catalyst for electroless deposition of metals.
Brummett Charles Roscoe (Harrisburg PA) Shaak Ray Ned (Lebanon PA) Andrews Daniel Marshall (Harrisburg PA), Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates.
Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
Lei Lawrence C. (Cupertino CA) Perlov Ilya (Santa Clara CA) Littau Karl A. (Sunnyvale CA) Morrison Alan F. (San Jose CA) Chang Mei (Cupertino CA) Sinha Ashok K. (Palo Alto CA), Chemical vapor deposition chamber with a purge guide.
Sinha Ashok ; Chang Mei ; Perlov Ilya ; Littau Karl A. ; Morrison Alan F. ; Lei Lawrence Chung-Lai, Chemical vapor deposition of a thin film onto a substrate.
Ingle, Nitin K.; Yuan, Zheng; Gee, Paul; Sapre, Kedar, Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen.
Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using an ion shower grid.
Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using plural ion shower grids.
Russell Kathleen (Santa Clara CA) Robles Stuardo (Sunnyvale CA) Nguyen Bang C. (Fremont CA) Sivaramakrishnan Visweswaren (Cupertino CA), Chemical vapor deposition reactor system and integrated circuit.
Buchwalter Leena P. ; Callegari Alessandro Cesare ; Cohen Stephan Alan ; Graham Teresita Ordonez ; Hummel John P. ; Jahnes Christopher V. ; Purushothaman Sampath ; Saenger Katherine Lynn ; Shaw Jane , Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same.
Sambucetti, Carlos Juan; Chen, Xiaomeng; Seo, Soon-Cheon; Agarwala, Birenda Nath; Hu, Chao-Kun; Lustig, Naftali Eliahu; Greco, Stephen Edward, Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect.
T. Brian McAneney CA; Edward G. Zwartz CA; Kirit N. Naik CA; Fernando P. Yulo CA; Sandra J. Gardner CA; James H. Sharp CA; Shadi L. Malhotra CA, Coated photographic papers.
Brusic Vlasta A. ; Marino Jeffrey Robert ; O'Sullivan Eugene John ; Sambucetti Carlos Juan ; Schrott Alejandro Gabriel ; Uzoh Cyprian Emeka, Cobalt-tin alloys and their applications for devices, chip interconnections and packaging.
Lane Andrew P. (Westminster TX) Webb Douglas A. (Allen TX) Frederick Gene R. (Mesquite TX), Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride.
Blom, Paulus Petrus Maria; Rosing, Philip; Stevens, Alquin Alphons Elisabeth; Huijbregts, Laurentia Johanna; Bos, Eddy, Device for generating a plasma discharge for patterning the surface of a substrate.
Kim, Sang Hyuk; Yang, Dongqing; Lee, Young S.; Jung, Weon Young; Kim, Sang-jin; Hsu, Ching-Mei; Wang, Anchuan; Ingle, Nitin K., Dry-etch for selective oxidation removal.
Edelstein Daniel C. ; Dalton Timothy J. ; Gaudiello John G. ; Krishnan Mahadevaiyer ; Malhotra Sandra G. ; McGlashan-Powell Maurice ; O'Sullivan Eugene J. ; Sambucetti Carlos J., Dual etch stop/diffusion barrier for damascene interconnects.
Yezdi Dordi ; Joe Stevens ; Roy Edwards ; Bob Lowrance ; Michael Sugarman ; Mark Denome, Electro-chemical deposition cell for face-up processing of single semiconductor substrates.
Dordi Yezdi ; Olgado Donald J. ; Morad Ratson ; Hey Peter ; Denome Mark ; Sugarman Michael ; Lloyd Mark ; Stevens Joseph ; Marohl Dan ; Shin Ho Seon ; Ravinovich Eugene ; Cheung Robin ; Sinha Ashok K, Electro-chemical deposition system.
Dubin Valery M. ; Shacham-Diamand Yosef ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K., Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications.
Shacham-Diamand Yosi ; Dubin Valery M. ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K., Electroless deposition equipment or apparatus and method of performing electroless deposition.
Ikeda, Taro; Osada, Yuki; Kasai, Shigeru, Electromagnetic-radiation power-supply mechanism for exciting a coaxial waveguide by using first and second poles and a ring-shaped reflection portion.
Hung, Hoiman (Raymond); Caulfield, Joseph P.; Shan, Hongqing; Rice, Michael; Collins, Kenneth S; Cui, Chunshi, Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon.
Jingbao Liu ; Judy Wang ; Takehiko Komatsu ; Bryan Y Pu ; Kenny L Doan ; Claes Bjorkman ; Melody Chang ; Yunsang Kim ; Hongching Shan ; Ruiping Wang, Etch method using a dielectric etch chamber with expanded process window.
Barnes Michael S. (San Francisco CA) Keller John H. (Poughkeepsie NY) Holber William M. (Boston MA) Cotler Tina J. (Newburgh NY) Chapple-Sokol Jonathan D. (Poughkeepsie NY) Podlesnik Dragan (New York, Etching of silicon dioxide selectively to silicon nitride and polysilicon.
Doklan Raymond H. (Whitehall Township ; Lehigh County PA) Martin ; Jr. Edward P. (Bethlehem PA) Roy Pradip K. (Allentown PA) Shive Scott F. (Bethlehem PA) Sinha Ashok K. (Allentown PA), Fabricating a semiconductor device with low defect density oxide.
Bayman, Atiye; Rahman, Md Sazzadur; Zhang, Weijie; van Schravendijk, Bart; Gauri, Vishal; Papasoulitotis, George D.; Singh, Vikram, Gap fill for high aspect ratio structures.
Choi, Soo Young; Shang, Quanyuan; Greene, Robert I.; Hou, Li, Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition.
Ballance David S. ; Bierman Benjamin ; Tietz James V., Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween.
van de Ven Everhardus P. (Cupertino CA) Broadbent Eliot K. (San Jose CA) Benzing Jeffrey C. (San Jose CA) Chin Barry L. (Sunnyvale CA) Burkhart Christopher W. (San Jose CA), Gas-based substrate protection during processing.
Blackwood Robert S. (Lubbock TX) Biggerstaff Rex L. (Lubbock TX) Clements L. Davis (Lincoln NE) Cleavelin C. Rinn (Lubbock TX), Gaseous process and apparatus for removing films from substrates.
Tsuei, Lun; Sen, Soovo; Lee, Ju-Hyung; Rocha-Alvarez, Juan Carlos; Shmurun, Inna; Zhao, Maosheng; Kim, Troy; Venkataraman, Shankar, Heated gas distribution plate for a processing chamber.
Semyon Sherstinsky ; Alison Gilliam ; Paul Smith ; Leonel A. Zuniga ; Ted Yoshidome ; Nitin Khurana ; Rod Mosely ; Umesh Madhav Kelkar ; Joseph Yudovsky ; Alan Popiolkowski, Heater for processing chamber.
Salvador P. Umotoy ; Steve H. Chiao ; Anh N. Nguyen ; Be V. Vo ; Joel Huston ; James J. Chen ; Lawrence Chung-Lai Lei, High temperature chemical vapor deposition chamber.
Papasouliotis George D. ; Chakravarti Ashima B. ; Conti Richard A. ; Economikos Laertis ; Van Cleemput Patrick A., High throughput chemical vapor deposition process capable of filling high aspect ratio structures.
Tscheppe Andrew (Watertown CT), High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric condi.
Krishnaraj, Padmanabhan; Ionov, Pavel; Lai, Canfeng; Cox, Michael Santiago; Shamouilian, Shamouil, In situ application of etch back for improved deposition into high-aspect-ratio features.
Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
Ahn, Jae-Young; Hyung, Yong-Woo; Kim, Young-Seok; Kang, Man-Sug, Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same.
Claes H. Bjorkman ; Min Melissa Yu ; Hongquing Shan ; David W. Cheung ; Wai-Fan Yau ; Kuowei Liu ; Nasreen Gazala Chapra ; Gerald Yin ; Farhad K. Moghadam ; Judy H. Huang ; Dennis Yost ; B, Integrated low K dielectrics and etch stops.
Karthik Janakiraman ; Kelly Fong ; Chen-An Chen ; Paul Le ; Rong Pan ; Shankar Venkataraman, Integration of remote plasma generator with semiconductor processing chamber.
Lopatin, Sergey; Wang, Fei; Schonauer, Diana; Avanzino, Steven C., Interconnect structure formed in porous dielectric material with minimized degradation and electromigration.
Wright, Marilyn I.; Bonser, Douglas J.; You, Lu; Hellig, Kay, L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials.
Moslehi Mehrdad M. (Palo Alto CA) Fu Chi Y. (San Francisco County CA) Saraswat Krishna (Santa Clara County CA), Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge.
Bardos Ladislav,SEX ; Barankova Hana,SEX ; Berg Soren,SEX, Method and an apparatus for generation of a discharge in own vapors of a radio frequency electrode for sustained self-sp.
Ye Yan ; Ma Diana Xiaobing ; Yin Gerald Zheyao ; Prasad Keshav ; Siegel Mark ; Mak Steve S. Y. ; Martinez Paul ; Papanu James S. ; Lu Danny Chien, Method and apparatus for cleaning by-products from plasma chamber surfaces.
Hong Soonil ; Ryu Choon Kun ; Nault Michael P. ; Singh Kaushal K. ; Lam Anthony ; Rana Virendra V. S. ; Conners Andrew, Method and apparatus for improving gap-fill capability using chemical and physical etchbacks.
Hong Soonil ; Ryu Choon Kun ; Nault Michael P. ; Singh Kaushal K. ; Lam Anthony ; Rana Virendra V. S. ; Conners Andrew, Method and apparatus for improving gap-fill capability using chemical and physical etchbacks.
Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) Arora Rikhit (Mesa AZ), Method and apparatus for low temperature deposition of CVD and PECVD films.
Joseph Yudovsky ; Tom Madar ; Salvador Umotoy ; Son Ngoc Trinh ; Lawrence C. Lei ; Anzhong (Andrew) Chang ; Xiaoxiong (John) Yuan, Method and apparatus for preventing edge deposition.
Goldstein Rachel (Givataim CT ILX) Kukanskis Peter E. (Watertown CT) Grunwald John J. (New Haven CT), Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence.
Khandan, Shahab; Fulmer, Christopher T.; Washington, Lori D.; Diniz, Herman P.; Scudder, Lance A.; Samoilov, Arkadii V., Method for CVD process control for enhancing device performance.
Gellrich, Norbert; Kirchmann, Rainer, Method for anisotropic plasma-chemical dry etching of silicon nitride layers using a gas mixture containing fluorine.
Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX) Jucha Rhett B. (Celeste TX) Loewenstein Lee M. (Plano TX), Method for cleanup processing chamber and vacuum process module.
Fairbairn, Kevin; Rice, Michael; Weidman, Timothy; Ngai, Christopher S; Latchford, Ian Scot; Bencher, Christopher Dennis; Wang, Yuxiang May, Method for depositing an amorphous carbon layer.
Chen, Linlin; Wilson, Gregory J.; McHugh, Paul R.; Weaver, Robert A.; Ritzdorf, Thomas L., Method for electrochemically depositing metal on a semiconductor workpiece.
Mui David ; Podlesnik Dragan ; Liu Wei ; Lee Gene ; Kim Nam-Hun ; Chinn Jeff, Method for etching a trench having rounded top and bottom corners in a silicon substrate.
Jucha Rhett B. (Celeste TX) Davis Cecil J. (Greenville TX) Tang Tom (Dallas TX) Loewenstein Lee M. (Plano TX), Method for etching titanium nitride local interconnects.
Sambucetti Carlos Juan ; Rubino Judith Marie ; Edelstein Daniel Charles ; Cabral ; Jr. Cyryl ; Walker George Frederick ; Gaudiello John G ; Wildman Horatio Seymour, Method for forming Co-W-P-Au films.
Okano Haruo (Tokyo JPX) Noguchi Sadahisa (Fuchu JPX) Sekine Makoto (Yokohama JPX), Method for forming a film on a substrate by activating a reactive gas.
Okano Haruo (Tokyo JPX) Noguchi Sadahisa (Tokyo JPX) Sekine Makoto (Yokohama JPX), Method for forming a film on a substrate by activating a reactive gas.
Sheng David Y. (Austin TX) Kosa Yasunobu (Austin TX) Urquhart Andrew J. (Pflugerville TX) Cullen Mark J. (Austin TX), Method for forming a lightly-doped drain (LDD) structure in a semiconductor device.
Rogers Steven H. (Midwest City OK) Mundt Randall S. (Colorado Springs CO) Kaya Denise A. (Woodland Park CO), Method for forming trench isolation structures.
Kao,Chien Teh; Chou,Jing Pei (Connie); Lai,Chiukin (Steven); Umotoy,Sal; Huston,Joel M.; Trinh,Son; Chang,Mei; Yuan,Xiaoxiong (John); Chang,Yu; Lu,Xinliang; Wang,Wei W.; Phan,See Eng, Method for front end of line fabrication.
Skotnicki, Thomas; Jurczak, Malgorzata, Method for making a semiconductor device comprising a stack alternately consisting of silicon layers and dielectric material layers.
Horak, David Vaclav; Koburger, III, Charles William; Mitchell, Peter H.; Nesbit, Larry Alan, Method for manufacturing a multi-level interconnect structure.
Feustel, Frank; Werner, Thomas; Boemmels, Juergen, Method for patterning a metallization layer by reducing resist strip induced damage of the dielectric material.
Strongin Myron (Center Moriches NY) Ruckman Mark (Middle Island NY) Strongin Daniel (Port Jefferson NY), Method for producing high quality thin layer films on substrates.
Lowrey Tyler A. (Boise ID) Chance Randal W. (Boise ID) Cathey David A. (Boise ID), Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process.
Kim Sung C. (Boise ID) Meikle Scott (Boise ID), Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP).
Ravi Kramadhati V. (Atherton CA) Orczyk Maciek (Cupertino CA), Method for the stabilization of halogen-doped films through the use of multiple sealing layers.
An, Jae-Hyuck, Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices.
Danny Chien Lu ; Allen Zhao ; Peter Hsieh ; Hong Shih ; Li Xu ; Yan Ye, Method of cleaning a semiconductor device processing chamber after a copper etch process.
Gaillard, Frederic; Xia, Li-Qun; Lim, Tian-Hoe; Yieh, Ellie; Yau, Wai-Fan; Jeng, Shin-Puu; Liu, Kuowei; Lu, Yung-Cheng, Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition.
Ye Yan ; Ionov Pavel ; Zhao Allen ; Hsieh Peter Chang-Lin ; Ma Diana Xiaobing ; Yan Chun ; Yuan Jie, Method of etching patterned layers useful as masking during subsequent etching or for damascene structures.
Cha Cher Liang,SGX ; See Alex,SGX ; Chan Lap, Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer.
Lee, Hyosan; Yoon, Boun; Lee, Kuntack; Kim, Donghyun; Kang, Daehyuk; Park, Imsoo; Kim, Youngok; Kim, Young-Hoo; Bae, Sang Won, Method of fabricating nonvolatile memory device.
Lopatin Sergey ; Achuthan Krishnashree, Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed.
Qian Lingqian (San Jose CA) Schmidt Melvin C. (San Jose CA) Nobinger Glenn L. (Santa Clara CA), Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition.
Kohmura Yukio (Chiba JPX) Ishida Yoshinori (Ichihara JPX) Nishimoto Takuya (Yokohama JPX), Method of forming a thin film by plasma CVD and apapratus for forming a thin film.
Chung, Seung-pil; Chi, Kyeong-koo; Kim, Ji-soo; Chu, Chang-woong; Seo, Sang-hun, Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module.
Sanders Jozef A. M. (Sunnyvale CA) Sanders Franciscus H. M. (Eindhoven NLX) Kalter Hendrikus (Eindhoven CA NLX) van de Ven Everhardus P. G. T. (Sunnyvale CA), Method of manufacturing a semiconductor device.
Hori Masaru (Yokohama JPX) Itoh Masamitsu (Yokohama JPX), Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films.
Turgut Sahin ; Fred C. Redeker ; Romuald Nowak ; Shijian Li ; Timothy Dyer ; Derek R. Witty, Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling.
Chen, Huajie; Mocuta, Dan M.; Murphy, Richard J.; Bedell, Stephan W.; Sadana, Devendra K., Method of preventing surface roughening during hydrogen prebake of SiGe substrates.
Fathauer Robert W. (Phoenix AZ) George Thomas (La Crescenta CA) Jones Eric W. (Los Angeles CA), Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices.
Joerg Dreybrodt DE; Dirk Drescher DE; Ralf Zedlitz DE; Stephan Wege DE, Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases.
Blalock Guy T. (Boise ID) Doan Trung T. (Boise ID), Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage.
Zarowin Charles B. (Rowayton CT) Bollinger L. David (Ridgefield CT), Methods and apparatus for generating a plasma for “downstream”rapid shaping of surfaces of substrates and films.
Xia, Li-Qun; Balseanu, Mihaela; Nguyen, Victor; Witty, Derek R.; M'Saad, Hichem; Yang, Haichun; Lu, Xinliang; Kao, Chien-Teh; Chang, Mei, Methods and systems for forming at least one dielectric layer.
Kloiber Allan J. (Marshall Township ; Allegheny County PA) Bubien Gary G. (Center PA) Osmanski Gerald S. (Brighton Township ; Beaver County PA), Modular apparatus and method for surface treatment of parts with liquid baths.
Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Wang David N. (Cupertino CA) Cheng David (San Jose CA) Toshima Masato (San Jose CA) Harari Isaac (Mountain View CA) Hoppe Peter D. (Sun, Multi-chamber integrated process system.
Moslehi Mehrdad M. (Dallas TX) Davis Cecil J. (Greenville TX) Jones John (Plano TX) Matthews Robert T. (Plano TX), Multi-electrode plasma processing apparatus.
Liu Chih-Chien,TWX ; Chen Kuen-Jian,TWX ; Chen Yu-Hao,TWX ; Wu J. Y.,TWX ; Lur Water,TWX ; Sun Shih-Wei,TWX, Multi-step high density plasma chemical vapor deposition process.
Gardella ; Jr. Joseph A. (Buffalo NY) Vargo Terrance G. (Buffalo NY), Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies.
Dobuzinsky David M. (Hopewell Junction NY) Matsuda Tetsuo (Poughkeepsie NY) Nguyen Son V. (Hopewell Junction NY) Ryan James G. (Newton CT) Shapiro Michael (Beacon NY), PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element.
Kaja Suryanarayana (Hopewell Junction NY) Mukherjee Shyama P. (Hopewell Junction NY) O\Sullivan Eugene J. (Upper Nyack NY) Paunovic Milan (Port Washington NY), Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electrol.
Fodor Mark A. (Los Gatos CA) Bercaw Craig A. (Sunnyvale CA) Dornfest Charles (Fremont CA), Patterned susceptor to reduce electrostatic force in a CVD chamber.
Chen Ching-Hwa (Milpitas CA) Arnett David (Fremont CA) Liu David (San Jose CA), Plasma cleaning method for removing residues in a plasma treatment chamber.
Taylor Brad ; Sahin Turgut ; Dornfest Charles ; Redeker Fritz, Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field.
Kugimiya Katsuhisa,JPX ; Nishizawa Takanori,JPX ; Tajima Daisuke,JPX, Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen.
Celestino Salvatore A. (Novato CA) Gorin Georges J. (Pinole CA) Hilliker Stephen E. (Petaluma CA) Powell Gary B. (Petaluma CA), Plasma reactor apparatus.
Wang David N. (Cupertino CA) White John M. (Hayward CA) Law Kam S. (Union City CA) Leung Cissy (Union City CA) Umotoy Salvador P. (Pittsburg CA) Collins Kenneth S. (San Jose CA) Adamik John A. (San R, Plasma-enhanced CVD process using TEOS for depositing silicon oxide.
Chang Mei (Cupertino CA) Leung Cissy (Fremont CA) Wang David N. (Saratoga CA) Cheng David (San Jose CA), Process for CVD deposition of tungsten layer on semiconductor wafer.
Wang David N. (Cupertino CA) White John M. (Hayward CA) Law Kam S. (Union City CA) Leung Cissy (Union City CA) Umotoy Salvador P. (Pittsburgh CA) Collins Kenneth S. (San Jose CA) Adamik John A. (San , Process for PECVD of silicon oxide using TEOS decomposition.
Chandrachood, Madhavi R.; Sandlin, Nicole; Lee, Yung-Hee Yvette; Ding, Jian, Process for etching a metal layer suitable for use in photomask fabrication.
Hung, Hoiman (Raymond); Caulfield, Joseph P.; Shan, Hongqing; Wang, Ruiping; Yin, Gerald Z., Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window.
Tomikawa Tadashi (Itami JPX) Fujita Nobuhiko (Itami JPX) Nakagama Shyoji (Itami JPX) Nakayama Akira (Itami JPX), Process for the synthesis of hard boron nitride.
Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX) Loewenstein Lee M. (Plano TX) Jucha Rhett B. (Celeste TX) Hildenbrand Randall C. (Richardson TX) Jones John I. (Plano TX), Processing apparatus and method.
Schacham-Diamand Yosef ; Dubin Valery M. ; Ting Chiu H. ; Zhao Bin ; Vasudev Prahalad K. ; Desilva Melvin, Protected encapsulation of catalytic layer for electroless copper interconnect.
Williams Kurt E. ; Druz Boris L. ; Hines Danielle S. ; Londono Jhon F., Reactive ion beam etching method and a thin film head fabricated using the method.
Law Kam S. (Union City CA) Leung Cissy (Fremont CA) Tang Ching C. (San Francisco CA) Collins Kenneth S. (San Jose CA) Chang Mei (Cupertino CA) Wong Jerry Y. K. (Union City CA) Wang David Nin-Kou (Cup, Reactor chamber self-cleaning process.
Chao-Kun Hu ; Robert Rosenberg ; Judith Marie Rubino ; Carlos Juan Sambucetti ; Anthony Kendall Stamper, Reduced electromigration and stressed induced migration of Cu wires by surface coating.
Markunas Robert J. (Chapel Hill NC) Hendry Robert (Hillsborough NC) Rudder Ronald A. (Cary NC), Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer.
deBoer Wiebe B. (Eersel NLX) Ozias Albert E. (Aumsville OR), Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment.
Calabrese Gary S. (North Andover MA) Calvert Jeffrey M. (Burke VA) Chen Mu-San (Ellicott MD) Dressick Walter J. (Fort Washington MD) Dulcey Charles S. (Washington DC) Georger ; Jr. Jacque H. (Holden , Selective metallization process.
Brooks Cynthia B. ; Merry Walter ; Joshi Ajey M. ; Quinones Gladys D. ; Trevor Jitske, Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and.
Forget Lawrence E. (Poughkeepsie NY) Gdula Robert A. (Pleasant Valley NY) Hollis Joseph C. (Poughquag NY), Selective reactive ion etching of polysilicon against SiO2 utilizing SF6-Cl2-inert gas.
Blaugher Richard D. (Pittsburgh PA) Buttyan Joseph (Wilkins Township ; Alleghney County PA) Przybysz John X. (Penn Hills PA), Selective silicon dioxide etchant for superconductor integrated circuits.
Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
Yang, Jang-Gyoo; Miller, Matthew L.; Chen, Xinglong; Chuc, Kien N.; Liang, Qiwei; Venkataraman, Shankar; Lubomirsky, Dmitry, Semiconductor processing system and methods using capacitively coupled plasma.
Su, Shu-Hui; Huang, Cheng-Lin; Yang, Jiing-Feng; Wu, Zhen-Cheng; Wu, Ren-Guei; Chen, Dian-Hau; Mii, Yuh-Jier, Semiconductor structure having an air-gap region and a method of manufacturing the same.
Dawson Robert ; Michael Mark W. ; Bandyopadhyay Basab ; Fulford ; Jr. H. Jim ; Hause Fred N. ; Brennan William S., Substantially planar semiconductor topography using dielectrics and chemical mechanical polish.
Sugaya, Masakazu; Murai, Fumio; Kaneko, Yutaka; Kanetomo, Masafumi; Hirasawa, Shigeki; Watanabe, Tomoji; Yamamoto, Tatuharu; Kuroda, Katsuhiro, Substrate temperature control system and method for controlling temperature of substrate.
Gerhard M. Schneider ; Hamid Noorbakhsh ; Bryan Pu ; Kaushik Vaidya ; Brad Leroy Mays ; Hung Dao ; Evans Lee ; Hongging Shan, Support assembly with thermal expansion compensation.
Redeker Fred C. ; Moghadam Farhad ; Hanawa Hiroji ; Ishikawa Tetsuya ; Maydan Dan ; Li Shijian ; Lue Brian ; Steger Robert J. ; Wong Manus ; Wong Yaxin ; Sinha Ashok K., Symmetric tunable inductively coupled HDP-CVD reactor.
Kellerman Peter L. ; Bernstein James D. ; Denholm A. Stuart, System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate.
Ershov,Alexander I.; Marx,William F., Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source.
Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
Wang David Nin-Kou ; White John M. ; Law Kam S. ; Leung Cissy ; Umotoy Salvador P. ; Collins Kenneth S. ; Adamik John A. ; Perlov Ilya ; Maydan Dan, Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process.
Moslehi Mehrdad M. (Palo Alto CA) Saraswat Krishna C. (Santa Clara County CA), Thermal/microwave remote plasma multiprocessing reactor and method of use.
Zhao Jun ; Sinha Ashok ; Tepman Avi ; Chang Mei ; Luo Lee ; Schreiber Alex ; Sajoto Talex ; Wolff Stefan ; Dornfest Charles ; Danek Michal, Thermally floating pedestal collar in a chemical vapor deposition chamber.
Walsh Daniel P. (Peabody MA) Knudsen Philip D. (South Berwick ME), Thermally stable dual metal coated laminate products made from textured polyimide film.
Gerald Zheyao Yin ; Xue-Yu Qian ; Patrick L. Leahey ; Jonathan D. Mohn ; Waiching Chow ; Arthur Y. Chen ; Zhi-Wen Sun ; Brian K. Hatcher, Treatment of etching chambers using activated cleaning gas.
Dhindsa, Rajinder; Marakhtanov, Alexei; Delgadino, Gerardo; Hudson, Eric; Yen, Bi Ming; Bailey, III, Andrew D., Triode reactor design with multiple radiofrequency powers.
Maydan Dan ; Somekh Sasson ; Sinha Ashok ; Fairbairn Kevin ; Lane Christopher ; Colborne Kelly ; Ponnekanti Hari K. ; Taylor W. N.(Nick), Ultra high throughput wafer vacuum processing system.
Telford Susan G. (Cupertino CA) Tseng Meng C. (Saratoga CA) Aruga Michio (Chiba JPX), Uniform tungsten silicide films produced by chemical vapor deposition.
Benjamin Neil ; Hylbert Jon ; Mangano Stefano, Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
Soma Takao (Nishikamo JPX) Ushikoshi Ryusuke (Handa City JPX) Nobori Kazuhiro (Haguri JPX), Wafer heaters for use in semiconductor-producing apparatus and heating units using such wafer heaters.
Burkhart Vincent E. (San Jose CA) Sugarman Michael N. (San Francisco CA) Grunes Howard E. (Santa Cruz CA), Wafer spacing mask for a substrate support chuck and method of fabricating same.
Halpin Michael W. ; Hawkins Mark R. ; Foster Derrick W. ; Vyne Robert M. ; Wengert John F. ; van der Jeugd Cornelius A. ; Jacobs Loren R., Wafer support system.
Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.