Heat treatment system, heat treatment method, and program
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F27D-019/00
F27B-017/00
H01L-021/67
C23C-016/46
H01L-021/02
출원번호
US-0799491
(2013-03-13)
등록번호
US-9453683
(2016-09-27)
우선권정보
JP-2012-075056 (2012-03-28)
발명자
/ 주소
Takenaga, Yuichi
Kudo, Daisuke
출원인 / 주소
TOKYO ELECTRON LIMITED
대리인 / 주소
Cantor Colburn LLP
인용정보
피인용 횟수 :
0인용 특허 :
14
초록▼
A controller of a heat treatment apparatus forms a phosphorous-doped polysilicon film (D-poly film) on a semiconductor wafer, and determines whether the D-poly film satisfies a target heat treatment characteristic. When it is determined that the target heat treatment characteristic is not satisfied,
A controller of a heat treatment apparatus forms a phosphorous-doped polysilicon film (D-poly film) on a semiconductor wafer, and determines whether the D-poly film satisfies a target heat treatment characteristic. When it is determined that the target heat treatment characteristic is not satisfied, the controller calculates a temperature in a reaction tube and flow rates of process gas supply pipes, which satisfy the target heat treatment characteristic, based on a heat treatment characteristic of the D-poly film and a model indicating relationships between changes in the temperature in the reaction tube and the flow rates of the process gas supply pipes, and a change in a heat treatment characteristic. The controller forms the D-poly film on the semiconductor wafer according to heat treatment conditions including the calculated temperature and the calculated flow rates, so as to satisfy the target heat treatment characteristic.
대표청구항▼
1. A heat treatment system which forms an impurity-doped polysilicon film on an object, the heat treatment system comprising: a heating unit which is configured to heat inside of a processing chamber accommodating a plurality of objects;a plurality of gas supply units which is configured to supply a
1. A heat treatment system which forms an impurity-doped polysilicon film on an object, the heat treatment system comprising: a heating unit which is configured to heat inside of a processing chamber accommodating a plurality of objects;a plurality of gas supply units which is configured to supply a film-forming gas for forming a polysilicon film and a doping gas into the processing chamber;a heat treatment condition storage unit which is configured to store heat treatment conditions, the heat treatment conditions including a temperature in the processing chamber heated by the heating unit and a flow rate of a film-forming gas and a doping gas supplied by the gas supply unit;a model storage unit which is configured to store a model indicating relationships between changes in a temperature in the process chamber and a flow rate of the doping gas, and a change in a film thickness of the impurity-doped polysilicon film and an impurity concentration in the impurity-doped polysilicon film;a heat treatment unit which is configured to control the heating unit to form impurity-doped polysilicon film on the objects according to the heat treatment conditions stored in the heat treatment condition storage unit;a calculating unit which is configured to determine whether the film thickness of the impurity-doped polysilicon film formed by the control of the heat treatment unit and the impurity concentration in the impurity-doped polysilicon film satisfy within a predetermined range, and when it is determined that the predetermined range is not satisfied, calculate a temperature in the processing chamber and a flow rate of the doping gas, which satisfy the predetermined range, based on the film thickness of the impurity-doped polysilicon film, the impurity concentration in the impurity-doped polysilicon film, and the model stored in the model storage unit; andan adjusting unit which is configured to adjust heat treatment to satisfy the predetermined range of the impurity-doped polysilicon film and the impurity concentration in the impurity-doped polysilicon film by changing the temperature in the processing chamber and the flow rate of the doping gas, which are stored in the heat treatment condition storage unit, respectively to the temperature in the processing chamber and the flow rate of the doping gas, which are calculated by the calculating unit, and heat-treating the objects according to the changed heat treatment conditions. 2. The heat treatment system of claim 1, wherein the processing chamber is divided into a plurality of zones, the model stored in the model storage unit indicates relationships between changes in a temperature in the processing chamber and a flow rate of the doping gas according to each of the plurality of zones, and a change in the film thickness of the impurity-doped polysilicon film and the impurity concentration in the impurity-doped polysilicon film according to each of the plurality of zones,the heating unit is capable of setting the temperature in the processing chamber according to each of the plurality of zones, andthe gas supply unit is capable of setting the flow rate of the doping gas according to each of the plurality of zones in the processing chamber.
Kristian E. Johnsgard ; Jean-Fran.cedilla.ois Daviet ; James A. Givens ; Stephen E. Savas ; Brad S. Mattson ; Ashur J. Atanos, Apparatus and method for thermal processing of semiconductor substrates.
Hauser John R. (Raleigh NC) Sorrell Furman Y. (Cary NC) Wortman Jimmie J. (Chapel Hill NC), Three-zone rapid thermal processing system utilizing wafer edge heating means.
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