[특허]Coated crucibles and methods for applying a coating to a crucible

Coated crucibles and methods for applying a coating to a crucible 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C30B-011/00 C30B-015/10 C30B-029/06 C30B-035/00 C04B-035/584 F27D-001/00 B05D-007/22 C04B-035/626 C04B-035/634
출원번호	US-0837864 (2010-07-16)
등록번호	US-9458551 (2016-10-04)
발명자 / 주소	Phillips, Richard J. Kimbel, Steven L. Deshpande, Aditya J. Shi, Gang
출원인 / 주소	MEMC Singapore Pte. Ltd.
대리인 / 주소	Armstrong Teasdale LLP
인용정보	피인용 횟수 : 0 인용 특허 : 29

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Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon

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1. A crucible for holding a melted semiconductor material, the crucible comprising: a body having a bottom and a sidewall extending up from the bottom, the bottom and the sidewall defining a cavity for holding the semiconductor material, the sidewall having an inner surface and an outer surface; anda first coating on a first area of the inner surface of the sidewall and across the bottom of the crucible, the first coating comprising silicon nitride and does not comprise an oxide additive;a second coating on a second area of the inner surface of the sidewall, wherein the second coating comprises silicon nitride, and further comprises an additive not present in the first coating, said additive not present in the first coating being a sintering agent selected from a group consisting of alumina, silica, yttria, and any combination thereof, the first coating and the second coating overlapping each other over a portion of the inner surface of the sidewall and wherein the second coating is applied only to a portion of the inner surface of the sidewall. 2. A crucible for holding a melted semiconductor material, the crucible comprising: a body having a bottom and a sidewall extending up from the bottom, the bottom and the sidewall defining a cavity for holding the semiconductor material the sidewall having an inner surface and an outer surface; anda first coating on a first area of the inner surface of the sidewall and across the bottom of the crucible, the first coating comprising silicon nitride and does not comprise an oxide additive;a second coating on a second area of the inner surface of the sidewall, wherein the second coating comprises silicon nitride, and further comprises an additive not present in the first coating, said additive not present in the first coating being a sintering agent selected from a group consisting of alumina, silica, yttria, and any combination thereof;wherein the first coating extends from the bottom of the crucible to a height H1 and the second coating extends from about the height H1 to a height H2 such that the first coating and the second coating overlap along a portion of the crucible sidewall. 3. The crucible as set forth in claim 2 wherein the distance between the bottom of the crucible and the height H1 is at least about 50% of the height of the sidewall. 4. The crucible as set forth in claim 2 wherein the height H2 extends above about a solidification line, S1. 5. The crucible as set forth in claim 2 wherein the height H2 extends to about a top of the crucible sidewall. 6. A crucible for holding a melted semiconductor material, the crucible comprising: a body having a bottom and a sidewall extending up from the bottom, the bottom and the sidewall defining a cavity for holding the semiconductor material, the sidewall having an inner surface and an outer surface; anda coating, the coating consisting of:a first coating on a first area of the inner surface of the sidewall and across the bottom of the crucible, wherein the first coating consists of silicon nitride and less than 1% by weight carbon and does not comprise an oxide additive; anda second coating on a second area of the inner surface of the sidewall, wherein the second coating consists of silicon nitride and a sintering agent selected from a group consisting of alumina, silica, yttria, and any combination thereof, the first coating and the second coating overlapping each other over a portion of the inner surface of the sidewall. 7. The crucible as set forth in claim 1 wherein the second coating comprises less than about 1% by weight carbon. 8. The crucible as set forth in claim 1 wherein a mass ratio of the sintering agent to the silicon nitride in the second coating composition is at least about 1:20. 9. The crucible as set forth in claim 1 wherein the crucible body comprises a material selected from silica, silicon nitride and graphite. 10. The crucible as set forth in claim 1 wherein the thickness of the first coating is at least about 50 μm. 11. The crucible as set forth in claim 1 wherein the thickness of the second coating is at least about 50 μm.

이 특허에 인용된 특허 (29)

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Kumar Singh P. (New Delhi INX) Prakash Prem (New Delhi INX), Process for the preparation of polycrystalline silicon ingot.
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Hansen Richard L. ; Drafall Larry E. ; McCutchan Robert M. ; Holder John D. ; Allen Leon A. ; Shelley Robert D., Surface-treated crucibles for improved zero dislocation performance.
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