Enhanced stitching by overlap dose and feature reduction
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/263
G06F-017/50
G03F-001/78
G03F-007/20
H01J-037/317
G03B-027/42
H01J-037/302
출원번호
US-0622983
(2015-02-16)
등록번호
US-9460260
(2016-10-04)
발명자
/ 주소
Wieland, Marco Jan-Jaco
출원인 / 주소
MAPPER LITHOGRAPHY IP B.V.
대리인 / 주소
Hoyng Rock Monegier LLP
인용정보
피인용 횟수 :
0인용 특허 :
5
초록▼
A method for processing exposure data (40) for exposing a pattern on a target (30) using a plurality of charged particle beams (24), the exposure data comprising pattern data (42) representing one or more features (60) to be written on the target (30) and exposure dose data (52) describing exposure
A method for processing exposure data (40) for exposing a pattern on a target (30) using a plurality of charged particle beams (24), the exposure data comprising pattern data (42) representing one or more features (60) to be written on the target (30) and exposure dose data (52) describing exposure dose of the charged particle beams. The method comprises setting one or more dose values of the exposure dose data (52) such that a sum of dose values corresponding to a position in an overlap area (36) of the target exceeds a maximum dose value for the non-overlap areas (38) of the target where adjacent sub-areas (34) do not overlap, and dividing the pattern data (42) into a plurality of sub-sections (44), each of the sub-sections comprising pattern data describing a part of the pattern to be written in a corresponding sub-area (34) of the target (30), wherein the pattern data (42) comprises overlap pattern data (46) describing a part of the pattern to be written in a corresponding overlap area (36) of the target where adjacent sub-areas (34) overlap, and processing the overlap pattern data (46) to reduce a size of one or more features described by the overlap pattern data.
대표청구항▼
1. Method for processing exposure data for exposing a pattern on a target by multiple beam lithography using a plurality of charged particle beams, each beam scanning a sub-area of the target, the exposure data comprising exposure dose data describing exposure dose of the charged particle beams and
1. Method for processing exposure data for exposing a pattern on a target by multiple beam lithography using a plurality of charged particle beams, each beam scanning a sub-area of the target, the exposure data comprising exposure dose data describing exposure dose of the charged particle beams and pattern data representing one or more features to be written on the target, the method comprising: dividing the pattern data into a plurality of sub-sections, each of the sub-sections comprising pattern data describing a part of the pattern to be written in a corresponding sub-area of the target, wherein the pattern data comprises overlap pattern data describing a part of the pattern to be written in a corresponding overlap area of the target where adjacent sub-areas overlap;setting one or more dose values of the exposure dose data such that a sum of dose values corresponding to a position in an overlap area of the target exceeds a maximum dose value for the non-overlap areas of the target where adjacent sub-areas do not overlap; andprocessing the overlap pattern data to reduce a size of one or more features described by the overlap pattern data, wherein the higher exposure dose in the overlap area is compensated by the reduction in size of the features in the overlap area. 2. The method of claim 1, wherein a first one of the sub-sections of pattern data corresponds to a first one of the sub-areas, and a second one of the sub-sections of pattern data corresponds to a second one of the sub-areas, and each of the first and second sub-sections include overlap pattern data corresponding to an overlap area of the first and second sub-area. 3. The method of claim 1, wherein the pattern data describes a feature having a width, the feature being comprised partly in the overlap pattern data and partly in non-overlap pattern data, and wherein the processing of the overlap pattern data results in reducing the width of the feature in the overlap pattern data with respect to the width of the feature in the non-overlap pattern data. 4. The method of claim 1, wherein the processing of the overlap pattern data results in a dimension of the one or more features being smaller in the overlap pattern data than in non-overlap pattern data of the pattern data. 5. The method of claim 1, wherein the step of setting one or more of the dose values of the exposure dose data comprises generating two sets of dose values for each overlap area of the target, each dose value in one set having a corresponding dose value in the other set, wherein the sum of the corresponding dose values in the two sets for at least some of the dose values exceeds a maximum dose value for the non-overlap areas of the target where adjacent sub-areas do not overlap. 6. The method of claim 1, wherein the reduction in size of the one or more features described by the overlap pattern data is related to the amount by which a sum of exposure dose values corresponding to a position in an overlap area of the target exceeds a maximum exposure dose value for the non-overlap areas of the target. 7. The method of any one of claim 1, wherein the reduction in size of the one or more features described by the overlap pattern data is proportional to the amount by which a sum of exposure dose values corresponding to a position in an overlap area of the target exceeds a maximum exposure dose value for the non-overlap areas of the target. 8. The method of claim 5, wherein the reduction in size of the one or more features described by the overlap pattern data is calculated from the sum of the corresponding dose values in the overlap area in combination with the desired size of the feature after development of a resist present on the target, the resist layer adapted to be exposed by the charged particle beams. 9. The method of claim 1, wherein the exposure dose data is divided into a plurality of sub-portions, each of the sub-portions including exposure dose values for exposing a corresponding sub-area of the target, wherein the exposure dose data comprises overlap dose values describing exposure dose for a corresponding overlap area of the target where adjacent sub-areas overlap, and non-overlap dose values describing exposure dose for corresponding non-overlap areas of the target where adjacent sub-areas do not overlap. 10. The method of claim 1, wherein a first sub-portion of exposure dose data corresponds to a first one of the sub-areas, and a second sub-portion of exposure dose data corresponds to a second one of the sub-areas, and each of the first and second sub-portions include overlap dose values corresponding to an overlap area of the first and second sub-area. 11. The method of claim 1, further comprising: identifying a first sub-portion of the exposure dose data corresponding to a first one of the sub-areas of the target;identifying a second sub-portion of the exposure dose data corresponding to a second one of the sub-areas of the target;generating first overlap dose data having a plurality of dose values each corresponding to a writing position in an overlap area of the target in which the first and second sub-areas overlap, wherein at least a portion of the dose values vary in dependence upon their corresponding writing position within the overlap area, the dose values decreasing in magnitude with increasing distance of their corresponding writing position from the part of the first sub-area outside of the overlap area; andgenerating second overlap dose data having a plurality of dose values each corresponding to a writing position in the overlap area of the target, wherein at least a portion of the dose values vary in dependence upon their corresponding writing position within the overlap area, the dose values decreasing in magnitude with increasing distance of their corresponding writing position from the part of the second sub-area outside of the overlap area. 12. The method of claim 11, wherein the variation in the dose values of the first and second overlap dose data is a linear variation in dependence on corresponding writing position of the dose values over at least a portion of the writing positions. 13. The method of claim 11, wherein the variation in the dose values of the first and second overlap dose data is a sinusoidal variation in dependence on corresponding writing position of the dose values over at least a portion of the writing positions. 14. The method of claim 1, wherein the dose values of the exposure dose data comprise dithering values for dithering the beams. 15. The method of claim 1, wherein the method is adapted for processing exposure data for exposing a pattern on a target by raster scanning the plurality of charged particle beams over the target. 16. Method for exposing a target using plurality of charged particle beams according to exposure data, the exposure data comprising pattern data representing one or more features to be written on the target and exposure dose data representing an exposure dose of the charged particle beams, the method comprising: processing the exposure data according to the method of claim 1; andexposing the target using the charged particle beams controlled in accordance with the processed exposure data, wherein each charged particle beam scans a sub-area of the target. 17. The method of claim 16, further comprising: assigning a first one of the charged particle beams for exposing a first sub-area of the target and assigning a second one of the charged particle beams for exposing a second sub-area of the target, wherein the first and second sub-areas are adjacent and overlap in an overlap area;exposing the first sub-area of the target using the first charged particle beam in accordance with a first portion of the processed exposure data; andexposing the second sub-area of the target using the second charged particle beam in accordance with a second portion of the processed exposure data. 18. A charged particle multiple beam lithography system for exposing a target using a plurality of charged particle beams, the system comprising: a charged particle generator adapted for generating the charged particle beams;a modulation system configured to modulate the charged particle beams in accordance with exposure data;a deflection system adapted to deflect the charged particle beams for scanning the beams over the surface of the target;a projection lens system adapted to project the charged particle beams onto the target;a moveable stage for holding the target; andone or more control units configured to control the modulation system, the deflection system, and the stage to expose the target;wherein the lithography system is adapted for processing the exposure data for exposing a pattern on the target in accordance with the method of claim 15. 19. The system of claim 18, wherein the modulation system comprises a beamlet blanker array and beam stop array for switching on and off individual beams of the plurality of charged particle beams. 20. The system of claim 18, wherein the modulation system is adapted to adjust an exposure dose of the charged particle beams in accordance with exposure dose data. 21. The system of claim 18, wherein the modulation system is adapted to adjust an exposure dose of the charged particle beams by dithering the charged particle beams in accordance with the exposure dose data. 22. The system claim 18, wherein the modulation system is adapted to switch the charged particle beams on or off in accordance with pattern data.
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이 특허에 인용된 특허 (5)
Wieland,Marco Jan Jaco; Kampherbeek,Bert Jan; van Veen,Alexander Hendrik Vincent; Kruit,Pieter, Electron beam exposure system.
Fujimura, Akira; Zable, Harold Robert, Method for design and manufacture of a reticle using a two-dimensional dosage map and charged particle beam lithography.
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