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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0513517 (2014-10-14) |
등록번호 | US-9472417 (2016-10-18) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 44 인용 특허 : 649 |
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitrid
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.
1. A method of etching aluminum oxide, the method comprising: pacing a patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises the aluminum oxide and exposed regions of silicon-containing material on a surface of the wafer t
1. A method of etching aluminum oxide, the method comprising: pacing a patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises the aluminum oxide and exposed regions of silicon-containing material on a surface of the wafer that is exposed to etchant; flowing a boron-and-bromine-containing precursor into the substrate processing region; and selectively etching the aluminum oxide faster than the exposed regions of silicon-containing material. 2. The method of claim 1 wherein the boron-and-halogen-containing precursor comprises one or more of boron tribromide (BBr3), BBr(CH3)2, or BBr2(CH3). 3. The method of claim 1 wherein an electron temperature in the substrate processing region during the selectively etching operation is less than 0.5 eV. 4. The method of claim 1 wherein a substrate temperature is between 30° C. and 800° C. during the selectively etching operation. 5. The method of claim 1 wherein the substrate processing region is plasma-free during the operation of selectively-etching the aluminum-containing material and the halogen-containing precursor is not excited in any remote plasma prior to entering the substrate processing region. 6. The method of claim 1 wherein the silicon-containing material comprises one of silicon, polysilicon, silicon oxide, silicon germanium or silicon nitride. 7. A method of etching aluminum oxide, the method comprising: placing a patterned substrate into a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises the aluminum oxide as well as exposed regions of a silicon-containing material;flowing a boron tribromide into the substrate processing region; andselectively etching the aluminum oxide faster than the silicon-containing material. 8. The method of claim 7 wherein the substrate processing region is plasma-free during the operation of selectively-etching the aluminum oxide and the boron tribromide is not excited in any remote plasma prior to entering the substrate processing region. 9. The method of claim 7 wherein a substrate temperature is between 500° C. and 800° C. during the operation of selectively etching the aluminum oxide.
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