Method for manufacturing semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/12
H01L-021/67
H01L-021/02
H01L-021/70
출원번호
US-0339867
(2014-07-24)
등록번호
US-9472429
(2016-10-18)
우선권정보
JP-2006-266543 (2006-09-29)
발명자
/ 주소
Eguchi, Shingo
Monma, Yohei
Tani, Atsuhiro
Hirosue, Misako
Hashimoto, Kenichi
Hosaka, Yasuharu
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
2인용 특허 :
79
초록▼
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be pe
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.
대표청구항▼
1. A method for manufacturing a semiconductor device, comprising: forming a metal layer over a substrate;oxidizing a surface of the metal layer;forming an element formation layer including a semiconductor element over the metal layer;forming a groove in the element formation layer;supplying liquid t
1. A method for manufacturing a semiconductor device, comprising: forming a metal layer over a substrate;oxidizing a surface of the metal layer;forming an element formation layer including a semiconductor element over the metal layer;forming a groove in the element formation layer;supplying liquid to at least a portion where the groove is formed;separating the element formation layer from the substrate, while a surface which is exposed by the separating is wetted with the liquid as the separation advances after stopping supply of the liquid; andfixing a flexible substrate to the element formation layer, after the separating step. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the liquid is pure water. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the element formation layer comprises an integrated circuit. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the liquid spreads due to a capillary phenomenon. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the element formation layer is separated from the substrate at an interface between the metal layer and the element formation layer. 6. The method for manufacturing a semiconductor device according to claim 1, wherein the element formation layer is separated from the substrate at an interface between the metal layer and the substrate. 7. The method for manufacturing a semiconductor device according to claim 1, wherein the step of supplying the liquid and the step of separating the element formation layer are performed simultaneously. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is a display device. 9. The method for manufacturing a semiconductor device according to claim 1, wherein the metal layer comprises a metal selected from the group consisting of tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, or an alloy thereof. 10. The method for manufacturing a semiconductor device according to claim 1, wherein oxidation of the surface of the metal layer is performed by treating the surface with an oxygen containing plasma. 11. The method for manufacturing a semiconductor device according to claim 1, wherein the liquid is supplied by spraying in an atomized form. 12. The method for manufacturing a semiconductor device according to claim 1, wherein the liquid is supplied by spraying in a vaporized form. 13. A method for manufacturing a semiconductor device, comprising: forming a metal layer over a substrate;oxidizing a surface of the metal layer;forming an element formation layer including a semiconductor element over the metal layer;generating peeling so that the element formation layer is separated from the substrate;supplying liquid to a portion where the peeling is generated;separating the element formation layer from the substrate, while a surface which is exposed by the separating is wetted with the liquid as the separation advances after stopping supply of the liquid; andfixing a flexible substrate to the element formation layer, after the separating step. 14. The method for manufacturing a semiconductor device according to claim 13, wherein the liquid is pure water. 15. The method for manufacturing a semiconductor device according to claim 13, wherein the element formation layer comprises an integrated circuit. 16. The method for manufacturing a semiconductor device according to claim 13, wherein the liquid is supplied by spraying in a vaporized form. 17. The method for manufacturing a semiconductor device according to claim 13, wherein the liquid spreads due to a capillary phenomenon. 18. The method for manufacturing a semiconductor device according to claim 13, wherein the element formation layer is separated from the substrate at an interface between the metal layer and the element formation layer. 19. The method for manufacturing a semiconductor device according to claim 13, wherein the element formation layer is separated from the substrate at an interface between the metal layer and the substrate. 20. The method for manufacturing a semiconductor device according to claim 13, wherein the step of supplying the liquid and the step of separating the element formation layer are performed simultaneously. 21. The method for manufacturing a semiconductor device according to claim 13, wherein the semiconductor device is a display device. 22. The method for manufacturing a semiconductor device according to claim 13, wherein the metal layer comprises a metal selected from the group consisting of tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, or an alloy thereof. 23. The method for manufacturing a semiconductor device according to claim 13, wherein oxidation of the surface of the metal layer is performed by treating the surface with an oxygen containing plasma. 24. The method for manufacturing a semiconductor device according to claim 13, wherein the liquid is supplied by spraying in an atomized form.
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