초록 ▼

Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls a

Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.

대표청구항 ▼

1. An interconnect structure comprising: at least one copper structure located between dielectric material portions, said at least one copper structure having sidewall surfaces, an uppermost surface and a bottommost surface; andat least one diffusion barrier material having an uppermost surface in c

1. An interconnect structure comprising: at least one copper structure located between dielectric material portions, said at least one copper structure having sidewall surfaces, an uppermost surface and a bottommost surface; andat least one diffusion barrier material having an uppermost surface in contact with said bottommost surface of said at least one copper structure, said at least one diffusion barrier material having edges that are vertically coincident with said vertical sidewall surfaces of said at least one copper structure,a graphene cap located atop said uppermost surface of said at least one copper structure and on said sidewall surfaces of said at least one copper structure. 2. The interconnect structure of claim 1, wherein said at least one diffusion barrier material comprises a first diffusion barrier material and a second diffusion barrier material, wherein said first diffusion barrier material is selected from a metal nitride, and said second diffusion barrier material is selected from a metal. 3. The interconnect structure of claim 1 further comprising another dielectric material located beneath said at least one diffusion barrier material. 4. The interconnect structure of claim 3, further comprising a substrate comprising at least one semiconductor material located beneath said another dielectric material. 5. The interconnect structure of claim 1, wherein said graphene cap comprises single-layer graphene, few-layer graphene, multi-layer graphene a mixture of single-layer, few-layer, and multi-layer graphene, or any combination of graphene layers mixed with amorphous and/or disordered carbon phases.