There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semico
There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer.
대표청구항▼
1. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer;a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base la
1. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer;a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; anda plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer,wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer. 2. The semiconductor light emitting device of claim 1, wherein a portion of the first and third layers is crystalline. 3. The semiconductor light emitting device of claim 1, wherein the oxide layer includes at least one of SiO2, Al2O3, ZrO, and TiO2, and the nitride layer includes at least one of SiN, SiON, TiN, TiAlN, TiSiN, and AlN. 4. The semiconductor light emitting device of claim 1, wherein the mask layer comprises a first nitride layer, a first graphene layer, an oxide layer, a second graphene layer, and a second nitride layer sequentially stacked on the first conductivity-type semiconductor base layer. 5. The semiconductor light emitting device of claim 4, wherein a thickness of the oxide layer is greater than thicknesses of the first and second nitride layers. 6. The semiconductor light emitting device of claim 1, wherein the graphene layer includes graphene in the form of a quantum dot. 7. The semiconductor light emitting device of claim 1, wherein the graphene layer is a monolayer graphene or a multilayer graphene. 8. The semiconductor light emitting device of claim 1, wherein a portion of the graphene layer is oxidized. 9. The semiconductor light emitting device of claim 1, wherein a thickness of the mask layer ranges from 160 nm to 240 nm. 10. The semiconductor light emitting device of claim 1, wherein the plurality of light emitting nanostructures further include a high resistive layer disposed to be in contact with the active layer. 11. The semiconductor light emitting device of claim 1, further comprising a transparent electrode layer positioned on the second conductivity-type semiconductor layer. 12. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer;a mask layer disposed on the first conductivity-type semiconductor base layer and including two or more layers formed of different materials with a plurality of openings exposing the first conductivity-type semiconductor base layer; anda plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer,wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer. 13. The semiconductor light emitting device of claim 12, wherein the mask layer comprises at least two graphene layer. 14. A backlight unit comprising: a substrate;a light source mounted on the substrate; andan optical sheet disposed above the light source,wherein the light source includes the light emitting device of claim 12. 15. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer;a mask layer disposed on the first conductivity-type semiconductor base layer and including an opening exposing the first conductivity-type semiconductor base layer; anda light emitting nanostructure disposed on the opening and including a first conductivity-type semiconductor core, a high resistive layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked,wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer. 16. The semiconductor light emitting device of claim 15, wherein the high resistive layer is deposed between the first conductivity-type semiconductor core and the active layer. 17. The semiconductor light emitting device of claim 15, wherein the high resistive layer is deposed on the active layer. 18. The semiconductor light emitting device of claim 15, wherein the high resistive layer is configured to block leakage current generated in an upper portion of the first conductivity-type semiconductor core.
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