A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction c
A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.
대표청구항▼
1. A system for forming a Group III-V semiconductor material comprising gallium, the system comprising: a reaction chamber comprising: a non-planar, infrared-transparent floor comprising a lower region integral and continuous with an elevated region;a stabilizing plate laterally adjacent the elevate
1. A system for forming a Group III-V semiconductor material comprising gallium, the system comprising: a reaction chamber comprising: a non-planar, infrared-transparent floor comprising a lower region integral and continuous with an elevated region;a stabilizing plate laterally adjacent the elevated region of the non-planar, infrared-transparent floor and overlying the lower region of the non-planar, infrared-transparent floor;a susceptor positioned within an opening in the stabilizing plate;a slit-shaped inlet extending through the elevated region of the non-planar, infrared-transparent floor and configured to provide a reactant toward the susceptor through substantially uniform laminar flow;at least one additional inlet proximate the slit-shaped inlet; andan infrared-absorbent plate laterally between the slit-shaped inlet and the stabilizing plate;heating structures external to the reaction chamber and configured to heat at least one gaseous gallium trichloride precursor to at least 700° C. to decompose substantially all dimers, trimers or other molecular variations of the at least one gaseous gallium trichloride precursor into its monomer form, the heating structures comprising at least one infrared radiation source and at least one infrared absorbent material;a source of the at least one gaseous gallium trichloride precursor external to the reaction chamber and in fluid communication with the slit-shaped inlet; anda source of gaseous ammonia external to the reaction chamber and in fluid communication with the at least one additional inlet. 2. The system of claim 1, wherein the source of the at least one gaseous gallium trichloride precursor is configured and sized to continuously deliver the gaseous gallium trichloride at a mass flow of at least 50 g gallium/hour. 3. The system of claim 1, further comprising a funnel-shaped nozzle subjacent the slit-shaped inlet. 4. The system of claim 3, wherein the heating structures comprise: radiation-absorbent heat-transfer beads within the funnel-shaped nozzle that, when heated, also heat a gaseous reactant flowing around and/or through the beads prior to entry into the reaction chamber; anda radiant energy source operatively associated with the radiation-absorbent heat-transfer beads. 5. The system of claim 3, wherein the funnel-shaped nozzle is largest at an end thereof proximate the slit-shaped inlet. 6. The system of claim 3, wherein the reaction chamber further comprises an insert positioned at least partially in an upper opening of the funnel-shaped nozzle, the insert defining the slit-shaped inlet. 7. The system of claim 1, wherein the reaction chamber includes a substrate on the susceptor. 8. The system of claim 1, wherein the at least one infrared absorbent material comprises silicon carbide. 9. The system of claim 1, wherein the at least one infrared radiation source comprises at least one infrared lamp. 10. The system of claim 1, wherein the slit-shaped inlet is sized to extend across a majority of an internal width of the reaction chamber. 11. The system of claim 1, wherein top surfaces of each of the susceptor, the stabilizing plate, the infrared-absorbent plate, and the elevated region of the non-planar, infrared-absorbent floor are substantially coplanar with one another. 12. The system of claim 1, wherein the infrared-absorbent plate comprises a silicon carbide plate. 13. The system of claim 1, wherein the infrared-absorbent plate is embedded within an portion of the elevated region of the non-planar, infrared-transparent floor. 14. The system of claim 1, wherein the non-planar, infrared-transparent floor comprises a non-planar quartz floor. 15. The system of claim 1, wherein the at least one additional inlet comprises a plurality of inlets operatively associated with a gate valve configured to seal a port in the reaction chamber and to facilitate the insertion and removal of substrates into and from the reaction chamber through the port. 16. The system of claim 1, wherein the slit-shaped inlet comprises a perforated rectangular insert extending through a rectangular port in the elevated region of the non-planar, infrared-transparent floor and into an end of a funnel structure exhibiting substantially planar sidewalls diverging outwardly from a tubular structure. 17. The system of claim 16, wherein the at least one infrared absorbent material comprises silicon carbide beads packed within the funnel structure, and wherein the at least one infrared radiation source comprises infrared spot lamps positioned adjacent the substantially planar sidewalls of the funnel structure. 18. The system of claim 17, further comprising a quartz sheathed thermocouple extending into the silicon carbide beads from an end of the tubular structure.
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