최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0791339 (2013-03-08) |
등록번호 | US-9484191 (2016-11-01) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 4 인용 특허 : 591 |
A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.
1. A remote plasma system comprising: a reactor comprising a reaction chamber;a remote plasma unit fluidly coupled to the reaction chamber and to a vacuum source;a pressure control device in fluid communication with and interposed between the remote plasma unit and the vacuum source, wherein the pre
1. A remote plasma system comprising: a reactor comprising a reaction chamber;a remote plasma unit fluidly coupled to the reaction chamber and to a vacuum source;a pressure control device in fluid communication with and interposed between the remote plasma unit and the vacuum source, wherein the pressure control device controls an operating pressure of the remote plasma unit located upstream of the pressure control device;a control valve between the remote plasma unit and the reaction chamber to pulse species from the remote plasma unit to the reaction chamber; anda controller coupled to the pressure control device and to the control valve, the controller configured to simultaneously control the pressure control device and the control valve, so that the remote plasma unit operates under steady-state conditions as the species are pulsed to the reaction chamber. 2. The remote plasma system of claim 1, further comprising at least one flow control unit coupled to the remote plasma unit. 3. The remote plasma system of claim 1, wherein the reactor is selected from the group consisting of a plasma-enhance chemical vapor deposition reactor, a plasma-enhanced atomic layer deposition reactor, a plasma-enhanced etch reactor, a plasma-enhanced clean reactor, and a plasma-enhanced treatment reactor. 4. The remote plasma system of claim 1, wherein the pressure control device is a closed-loop pressure control device. 5. The remote plasma system of claim 1, wherein the control valve is a fast-response pneumatic valve. 6. The remote plasma system of claim 1, further comprising an integrated inlet manifold block to allow mixing of the species with another gas prior to the species and gas entering a gas distribution system. 7. A remote plasma-enhanced atomic layer deposition system comprising: an atomic layer deposition reactor comprising a reaction chamber;a remote plasma unit in fluid communication with the reaction chamber and a vacuum source;a first reactant source in fluid communication with the remote plasma unit;a pressure control device in fluid communication with and interposed between the remote plasma unit and the vacuum source, wherein the pressure control device controls an operating pressure of the remote plasma unit located upstream of the pressure control device;a control valve between the remote plasma unit and the reaction chamber; anda controller coupled to the pressure control device and to the control valve, the controller configured to simultaneously control the pressure control device and the control valve, so that the remote plasma unit operates under steady-state conditions as species from the remote plasma unit are pulsed to the reaction chamber. 8. The remote plasma-enhanced atomic layer deposition system of claim 7, wherein the pressure control device is a closed-loop pressure control device. 9. The remote plasma-enhanced atomic layer deposition system of claim 7, further comprising an integrated manifold block to allow mixing of species generated by the remote plasma unit and another gas prior to entering a gas distribution system. 10. The remote plasma-enhanced atomic layer deposition system of claim 9, wherein the gas distribution system comprises a showerhead. 11. The remote plasma-enhanced atomic layer deposition system of claim 9, further comprising one or more flow controllers coupled to the integrated manifold block. 12. The remote plasma-enhanced atomic layer deposition system of claim 9, further comprising one or more flow controllers fluidly coupled to the remote plasma unit.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.