A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by
A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.
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1. A semiconductor device comprising: a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers including at least one modulation doped quantum well (QW) structure offset from a corresponding quantum dot in quantum well (QD-in-QW) structure,wherein the at least one mo
1. A semiconductor device comprising: a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers including at least one modulation doped quantum well (QW) structure offset from a corresponding quantum dot in quantum well (QD-in-QW) structure,wherein the at least one modulation doped QW structure includes a charge sheet spaced from the corresponding QD-in-QW structure by a corresponding spacer layer, wherein the corresponding QD-in-QW structure includes first and second bilayer structures with an undoped barrier layer therebetween,wherein the first bilayer structure includes a first template substructure offset from a first emission substructure by a first barrier layer, and the second bilayer structure includes a second template substructure offset from a second emission substructure by a second barrier layer, andwherein the first and second template substructures include first and second plurality of QDs embedded in first and second digitally-graded QWs, respectively, and the first and second emission substructures include third and fourth plurality of QDs embedded in first and second analog-graded QWs, respectively. 2. The semiconductor device of claim 1, wherein the first and second plurality of QDs are smaller in size than the third and fourth plurality of QDs . 3. The semiconductor device of claim 1, wherein the first and second analog-graded QWs are realized from InGaAs material having a maximum In concentration relative to Ga concentration of at least 27%. 4. The semiconductor device of claim 1, wherein the plurality of semiconductor layers include a plurality of QD-in-QW structures that are configured to support processing of electromagnetic radiation of different characteristic wavelengths. 5. The semiconductor device of claim 4, wherein the different characteristic wavelengths are optical signals in range from 1300 nm to 1550 nm. 6. The semiconductor device of claim 1, wherein: an n-type modulation doped QW structure is offset from a first QD-in-QW structure, wherein the n-type modulation doped QW structure includes an n-type doped charge sheet spaced from the first QD-in-QW structure by a first spacer layer; anda p-type modulation doped QW structure is offset from a second QD-in-QW structure, wherein the p-type modulation doped QW structure includes a p-type doped charge sheet spaced from the second QD-in-QW structure by a second spacer layer. 7. The semiconductor device of claim 6, wherein the n-type modulation doped QW structure and the first QD-in-QW structure are disposed above both the p-type modulation doped QW structure and the second QD-in-QW structure. 8. The semiconductor device of claim 7, wherein the second QD-in-QW structure is disposed above the p-type modulation doped QW structure. 9. The semiconductor device of claim 6, wherein the plurality of semiconductor layers further include a plurality of p-type layers above the n-type modulation doped QW structure, wherein the plurality of p-type layers include an P+ doped ohmic contact layer. 10. The semiconductor device of claim 9, wherein the plurality of semiconductor layers further include a plurality of n-type layers below the p-type modulation doped QW structure, and wherein the plurality of n-type layers include an N+ doped ohmic contact layer. 11. The semiconductor device of claim 1, wherein the plurality of semiconductor layers are disposed between a bottom mirror and a top mirror. 12. The semiconductor device of claim 1, wherein the semiconductor device realizes an integrated circuit that includes at least one optoelectronic device and at least one optional transistor device, wherein the at least one optoelectronic device processes electromagnetic radiation at a characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 13. The semiconductor device according to claim 12, wherein a first transistor device is present and comprises a heterostructure field-effect transistor (HFET) having source and drain terminal electrodes electrically coupled to the at least one modulation doped QW structure as well as a gate terminal electrode, wherein the gate terminal electrode is configured to create an inversion channel in the at least one modulation doped QW structure during operation of the HFET. 14. The semiconductor device of claim 12, wherein a second transistor device is present and comprises a bipolar field-effect transistor (BICFET) having a base terminal electrode electrically coupled to the at least one modulation doped QW structure as well as an emitter terminal electrode and a collector terminal electrode. 15. The semiconductor device of claim 12, wherein the at least one optoelectronic device comprises an optoelectronic thyristor having an injector terminal electrode electrically coupled to the at least one modulation doped QW structure as well as an anode terminal electrode and a cathode terminal electrode, wherein the optoelectronic thyristor processes electromagnetic radiation at the characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 16. The semiconductor device of claim 12, wherein the at least one optoelectronic device comprises an electrically-pumped laser emitter having an anode terminal electrode electrically coupled to the at least one modulation doped QW structure as well as a cathode terminal electrode, wherein the electrically-pumped laser emitter emits electromagnetic radiation at the characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 17. The semiconductor device of claim 12, wherein the at least one optoelectronic device comprises an optical detector having an anode terminal electrode electrically coupled to the at least one modulation doped QW structure as well as a cathode terminal electrode, wherein a QW diode detector absorbs electromagnetic radiation at the characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 18. The semiconductor device of claim 12, wherein: the at least one optoelectronic device comprises a resonator positioned adjacent a waveguide structure;the resonator including a closed loop waveguide that is configured to support closed-loop propagation of electromagnetic radiation that is emitted or absorbed by the resonator, wherein the electromagnetic radiation has the characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure; andthe waveguide structure being spaced from the closed loop waveguide to provide for an evanescent-wave coupling therebetween. 19. The semiconductor device of claim 18, wherein: the closed loop waveguide has a plurality of straight sections that are coupled together by bend sections;the waveguide structure includes a plurality of sections extending between an input and an output; andone section of the waveguide structure is spaced from and extends parallel to one straight section of the closed loop waveguide of the resonator to provide for the evanescent-wave coupling therebetween. 20. The semiconductor device of claim 19, wherein: an ion implant is formed in a gap region between the one section of the waveguide structure and the one straight section of the closed loop waveguide, wherein the ion implant provides for lateral confinement of light within the waveguide structure and the closed loop waveguide and provides a shift in band gap that limits charge transfer across the band gap. 21. The semiconductor device of claim 19, wherein: the waveguide structure includes control electrodes that are supplied with electrical signals that control charge density in the at least one modulation doped QW structure of the waveguide structure in order to change a refractive index of the waveguide structure and modulate the evanescent-wave coupling between the one straight section of the closed loop waveguide and the one section of the waveguide structure. 22. The semiconductor device of claim 18, wherein the resonator is configured to a desired function selected from emission and absorption of electromagnetic radiation at the characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 23. The semiconductor device of claim 18, further comprising: a heater transistor device integrally formed with and adjacent the resonator, wherein the heater transistor is configured to heat the resonator in order to tune the characteristic wavelength of the electromagnetic radiation that is emitted or absorbed by the resonator. 24. The semiconductor device according to claim 18, further comprising: at least one additional closed loop waveguide that is selectively coupled to the closed loop waveguide of the resonator by the evanescent-wave coupling in order to tune the characteristic wavelength of the electromagnetic radiation that is emitted or absorbed by the resonator. 25. The semiconductor device of claim 12, wherein the at least one optoelectronic device comprises a waveguide amplifier comprising two anode terminal electrode sections that define an active waveguide region therebetween as well as at least one cathode terminal electrode operably coupled to the at least one modulation doped QW structure outside the two anode terminal electrode sections, wherein the waveguide amplifier is configured to amplify electromagnetic radiation at the characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 26. The semiconductor device of claim 12, wherein the at least one optoelectronic device comprises a waveguide coupler optical switch comprising two parallel first and second waveguides separated by a coupling region, the waveguide coupler optical switch selectively operating in a cross state and a thru state, whereby in the cross state optical power entering the first waveguide is coupled evanescently to the second waveguide and in the thru state optical power entering the first waveguide passes thru the first waveguide. 27. A method of fabricating a semiconductor device comprising the steps of: forming a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers including at least one modulation doped quantum well (QW) structure offset from a corresponding quantum dot in quantum well (QD-in-QW) structure,wherein the at least one modulation doped QW structure includes a charge sheet spaced from the corresponding QD-in-QW structure by a spacer layer, wherein the corresponding QD-in-QW structure comprises first and second bilayer structures with an undoped barrier layer therebetween, wherein the first bilayer structure includes a first template substructure offset from a first emission substructure by a first barrier layer, wherein the second bilayer structure includes a second template substructure offset from a second emission substructure by a second barrier layer; andwherein the first and second template substructures include first and second plurality of QDs embedded in first and second digitally-graded QWs, respectively, and the first and second emission substructures include third and fourth plurality of QDs embedded in first and second analog-graded QWs, respectively. 28. The method of claim 27, wherein the first and second plurality of QDs are smaller in size than the third and fourth plurality of QDs. 29. The method of claim 27, wherein the first and second analog-graded QWs are realized from InGaAs material having a maximum In concentration relative to Ga concentration of at least 27%. 30. The method of claim 27, wherein the plurality of semiconductor layers includes a plurality of QD-in-QW structures that are configured to support emission or absorption of optical signals of different characteristic wavelengths. 31. The method of claim 30, wherein the different characteristic wavelengths are in range from 1300 nm to 1550 nm. 32. The method of claim 27, wherein the plurality of semiconductor layers include an n-type modulation doped QW structure offset from a first QD-in-QW structure and a p-type modulation doped QW structure offset from a second QD-in-QW structure. 33. The method of claim 32, wherein the n-type modulation doped QW structure and the first QD-in-QW structure are disposed above both the p-type modulation doped QW structure and the second QD-in-QW structure. 34. The method of claim 33, wherein the second QD-in-QW structure is disposed above the p-type modulation doped QW structure. 35. The method of claim 33, wherein the plurality of semiconductor layers further include a plurality of p-type layers above the n-type modulation doped QW structure, wherein the plurality of p-type layers include P+ doped ohmic contact layer. 36. The method of claim 35, wherein the plurality of semiconductor layers further include a plurality of n-type layers below the p-type modulation doped QW structure, wherein the plurality of n-type layers include an N+ doped ohmic contact layer. 37. The method of claim 27, wherein the plurality of semiconductor layers are disposed between a bottom mirror and a top mirror. 38. The method of claim 27, wherein the semiconductor device realizes an integrated circuit including at least one optoelectronic device and at least one optional transistor device, wherein the at least one optoelectronic device processes electromagnetic radiation at a characteristic wavelength supported by the first through fourth plurality of QDs of the corresponding QD-in-QW structure. 39. The method of claim 38, further comprising: depositing and patterning a double layer structure on a top layer of the plurality of semiconductor layers, the double layer structure including a bottom layer of silicon oxide and a top layer of silicon nitride layer; andperforming an ion implant for lateral confinement of light for the at least one optoelectronic device, wherein the double layer structure acts as a mask layer during the ion implant. 40. The method of claim 39, further comprising: subsequent to the ion implant, depositing and patterning a metal layer on the top layer of the plurality of semiconductor layers, wherein the metal layer is patterned such that the metal layer is spaced from the double layer structure by an offset of 1 μm or less. 41. The method of claim 40, further comprising: subsequent to the patterning of the metal layer, performing a wet etch that removes the double layer structure.
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