A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of th
A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer.
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1. A nanostructure semiconductor light-emitting device, comprising: a base layer formed of a first conductivity-type semiconductor;a first material layer disposed on the base layer and including a plurality of openings;a plurality of light-emitting nanostructures, each of which extends through each
1. A nanostructure semiconductor light-emitting device, comprising: a base layer formed of a first conductivity-type semiconductor;a first material layer disposed on the base layer and including a plurality of openings;a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore;a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer;a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures; anda contact electrode layer disposed on the second conductivity-type semiconductor extension layer. 2. The nanostructure semiconductor light-emitting device of claim 1, wherein each of the plurality of light-emitting nanostructures comprises a body having a first crystal plane and a tip having a second crystal plane different from the first crystal plane. 3. The nanostructure semiconductor light-emitting device of claim 2, wherein the exposed portion of each of the plurality of light-emitting nanostructures includes at least the tip of each of the plurality of light-emitting nanostructures. 4. The nanostructure semiconductor light-emitting device of claim 2, wherein a height of the filling layer is greater than about 50% of a height of the body of each of the plurality of light-emitting nanostructures. 5. The nanostructure semiconductor light-emitting device of claim 1, further comprising a reflective metal layer disposed on the contact electrode layer. 6. The nanostructure semiconductor light-emitting device of claim 5, wherein a lower surface of the reflective metal layer is planar. 7. The nanostructure semiconductor light-emitting device of claim 1, further comprising an omnidirectional reflector disposed on the contact electrode layer. 8. The nanostructure semiconductor light-emitting device of claim 7, wherein an upper surface of the second conductivity-type semiconductor extension layer is not planar and an upper surface of the omnidirectional reflector is formed according to a shape of the upper surface of the second conductivity-type semiconductor extension layer. 9. The nanostructure semiconductor light-emitting device of claim 7, wherein the omnidirectional reflector includes first and second refraction layers having different refractive indices. 10. The nanostructure semiconductor light-emitting device of claim 1, wherein portions of the second conductivity-type semiconductor extension layer corresponding to each of the plurality of light-emitting nanostructures are connected to each other. 11. The nanostructure semiconductor light-emitting device of claim 10, wherein an upper surface of the second conductivity-type semiconductor extension layer is planar. 12. The nanostructure semiconductor light-emitting device of claim 1, further comprising: a first electrode disposed on a portion of an upper surface of the contact electrode layer;and a second electrode disposed on a portion of one of an upper surface and a lower surface of the base layer. 13. The nanostructure semiconductor light-emitting device of claim 1, wherein a plurality of protrusions are formed on a lower surface of the base layer. 14. The nanostructure semiconductor light-emitting device of claim 1, further comprising a graded refractive index layer disposed on a lower surface of the base layer, wherein the graded refractive index layer comprises a plurality of layers having refractive indices gradually decreasing away from the lower surface of the base layer. 15. The nanostructure semiconductor light-emitting device of claim 1, further comprising a growth substrate disposed on the base layer, wherein an upper surface of the growth substrate has a plurality of protrusions. 16. The nanostructure semiconductor light-emitting device of claim 1, wherein the contact electrode layer is in direct contact with the filling layer. 17. A nanostructure semiconductor light-emitting device, comprising: a base layer formed of a first conductivity-type semiconductor;a first material layer disposed on the base layer and including a plurality of openings;a plurality of nanostructures extending through each of the plurality of openings, wherein each of the plurality of nanostructures includes a nanocore formed of a first conductivity-type semiconductor and an active layer disposed on the nanocore;a second conductivity-type semiconductor layer including a plurality of shell layers, each of which surrounds each of the plurality of nanostructures, and an extension layer connecting each of the plurality of shell layers; anda contact electrode layer disposed on the second conductivity-type semiconductor layer. 18. A nanostructure semiconductor light-emitting device, comprising: a base layer formed of a first conductivity-type semiconductor;a first material layer disposed on the base layer and including a plurality of openings;a plurality of light-emitting nanostructures protruding from the base layer and extending through the plurality of openings;a filling layer disposed on the first material layer and filling spaces between the plurality of light-emitting nanostructures, a portion of each of the plurality of light-emitting nanostructures exposed by the filling layer;a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, an upper surface of the second conductivity-type semiconductor extension layer being uneven; anda contact electrode layer disposed on the second conductivity-type semiconductor extension layer. 19. The nanostructure semiconductor light-emitting device of claim 18, wherein the upper surface of the second conductivity-type semiconductor extension layer at an area over the plurality of light-emitting nanostructures has a level higher than that of an area excluding the area over the plurality of light-emitting nanostructures. 20. The nanostructure semiconductor light-emitting device of claim 18, further comprising an omnidirectional reflector disposed on the contact electrode layer.
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