Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/00
H01L-027/146
H01L-031/0232
H01L-031/18
출원번호
US-0493891
(2012-06-11)
등록번호
US-9496308
(2016-11-15)
발명자
/ 주소
Haddad, Homayoon
McKee, Jeffrey
Jiang, Jutao
Miller, Drake
Palsule, Chintamani
Forbes, Leonard
출원인 / 주소
SiOnyx, LLC
대리인 / 주소
Mollaaghababa, Reza
인용정보
피인용 횟수 :
1인용 특허 :
251
초록▼
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semicond
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
대표청구항▼
1. A backside-illuminated photosensitive image device, comprising: a semiconductor substrate having multiple doped regions forming at least one junction;a textured region coupled to the semiconductor substrate and positioned such that incoming electromagnetic radiation passes through the semiconduct
1. A backside-illuminated photosensitive image device, comprising: a semiconductor substrate having multiple doped regions forming at least one junction;a textured region coupled to the semiconductor substrate and positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region, wherein the textured region interacts with the electromagnetic radiation so as to redirect at least a portion of the electromagnetic radiation back into the semiconductor substrate,a dielectric region positioned between the textured region and the at least one junction, the dielectric region being positioned to isolate the at least one junction from the textured region,a reflecting region coupled to the textured region for reflecting electromagnetic radiation passing through the textured region back to the textured region, wherein the textured region is disposed between the dielectric region and the reflecting region, andan electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. 2. The device of claim 1, wherein the textured region includes surface features having an average center-to-center distance of one half wavelength of a preselected wavelength of light, multiples of one half wavelength of the preselected wavelength of light, or at least one half wavelength of the preselected wavelength of light. 3. The device of claim 2, wherein the center-to-center distance distribution is a substantially uniform distance distribution. 4. The device of claim 2, wherein the surface features have an average height of about a multiple of a quarter wavelength of the preselected wavelength of light. 5. The device of claim 2, wherein the preselected wavelength of light is in the near infrared or infrared range. 6. The device of claim 2, wherein the preselected wavelength of light is greater than or equal to about 800 nm. 7. The device of claim 1, further comprising a dielectric layer positioned between the reflecting region and the textured region. 8. The device of claim 1, wherein the reflecting region includes a member selected from the group consisting of a Bragg reflector, a metal reflector, a metal reflector over a dielectric material, and combinations thereof. 9. The device of claim 1, wherein the textured region includes surface features selected from the group consisting of sloping, pyramidal, inverted pyramidal, spherical, square, rectangular, parabolic, ellipsoidal, asymmetric, symmetric, scallops, gratings, pillars, cones, microlenses, quantum dots, and combinations thereof. 10. The device of claim 1, wherein the textured region includes surface features having a size selected from the group consisting of micron-sized, nano-sized, and combinations thereof. 11. The device of claim 1, wherein the textured region has been formed by a process selected from the group consisting of plasma etching, reactive ion etching, porous silicon etching, lasing, chemical etching, nanoimprinting, material deposition, selective epitaxial growth, and combinations thereof. 12. The device of claim 1, wherein the textured region includes surface features that are sized and positioned to reduce specular reflection in the zeroth order direction. 13. The device of claim 1, further comprising an anti-reflective layer deposited on the semiconductor substrate at a surface opposite the at least one junction such that incident light passes through the anti-reflective layer prior to contacting the semiconductor substrate. 14. The device of claim 13, further comprising at least one isolation feature in the semiconductor substrate, the at least one isolation feature being positioned to reflect light impinging thereon back into the semiconductor substrate. 15. A backside-illuminated photosensitive image device, comprising: a semiconductor substrate having multiple doped regions forming at least one junction;a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, wherein the textured region includes a plurality of grooves;a dielectric region positioned between the textured region and the at least one junction, the dielectric region being positioned to isolate the at least one junction from the textured region, wherein the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate and the dielectric region before contacting the textured region; andan electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (251)
Shim Se-jin,KRX ; Jin You-chan,KRX ; Nam Seung-hee,KRX, Annealing methods of doping electrode surfaces using dopant gases.
Voutsas, Apostolos, Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films.
Adkisson, James W.; Gambino, Jeffrey P.; Jaffe, Mark D.; Leidy, Robert K.; Rassel, Richard J.; Stamper, Anthony K., CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom.
Lillquist Robert D. (Schenectady NY) Pimbley Joseph M. (Schenectady NY) Vogelsong Thomas L. (Schenectady NY), Composite visible/thermal-infrared imaging system.
Kaschmitter James L. (Pleasanton CA) Truher Joel B. (Palo Alto CA) Weiner Kurt H. (Campbell CA) Sigmon Thomas W. (Beaverton OR), Crystallization and doping of amorphous silicon on low temperature plastic.
Andreou, Andreas G.; Marwick, Miriam Adlerstein; Pouliquen, Philippe O., Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system.
Ashby Carol I. H. (Edgewood NM) Dishman James L. (Albuquerque NM), Dopant type and/or concentration selective dry photochemical etching of semiconductor materials.
Lester J. Kozlowski ; Gerard J. Sullivan ; Roger E. Dewames ; Brian T. McDermott, High performance ultraviolet imager for operation at room temperature.
Bethea Clyde G. (Plainfield NJ) Choi Kwong-Kit (North Plainfield NJ) Levine Barry F. (Livingston NJ) Malik Roger J. (Summit NJ) Walker John F. (Westfield NJ), Infrared-radiation detector device.
Fogel, Keith E.; Lee, Kam Leung; Saenger, Katherine L.; Sung, Chun Yung; Yin, Haizhou, Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics.
Magued Bishay ; Randall M. Chung ; James K. Dawson ; David Escobar ; Mike Fukatsu ; Edward Andrew Jakl ; Richard Arthur Mann ; Sarit Neter ; Ian Olsen ; Gregory A. Urban, Light sensing system with high pixel fill factor.
Land Cecil E. (Albuquerque NM) McKinney Ira D. (Albuquerque NM), Method and apparatus for bistable optical information storage for erasable optical disks.
Davies D. Eirug (Belmont MA) Roosild Sven A. (Billerica MA) Dolan ; Jr. Russell P. (Concord MA), Method and means for passivation and isolation in semiconductor devices.
Yamazaki Shunpei (Tokyo JPX) Takemura Yasuhiko (Kanagawa JPX), Method for forming a flash memory by forming shallow and deep regions adjacent the gate.
Hummel Rolf E. (Gainesville FL) Ludwig Matthias H. (Gainesville FL) Vala Martin (Gainesville FL), Method of manufacturing photoluminescing semiconductor material using lasers.
Knerer, Dieter; Huber, Andreas; Lambert, Ulrich; Passek, Friedrich, Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it.
Barthelemy Jean-Claude (12 rue Barra 42000 Saint-Etienne FRX) Geyssant Andr (24 rue Paillard 42100 Saint-Etienne FRX), Non-invasive method for the in vivo determination of the oxygen saturation rate of arterial blood, and device for carryi.
Guha Subhendu (Troy MI) Ovshinsky Stanford R. (Bloomfield Hills MI), P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same.
Lang Charles D. (Wysox PA) McCalmont Scott D. (Athens PA) Choi John (Sayre PA) Hou Anchi (Towanda PA) Shobert Alan (Sayre PA), Peel-apart photosensitive element.
Murakami,Ichiro, Photo-electric converting device and its driving method, and its manufacturing method, solid-state image pickup device and its driving method and its manufacturing method.
Czubatyj Wolodymyr (Hamtramck MI) Singh Rajendra (Clawson MI) Doehler Joachim (Union Lake MI) Allred David D. (Troy MI) Reyes Jaime M. (Birmingham MI), Photovoltaic device having incident radiation directing means for total internal reflection.
Matsuyama Jinsho,JPX, Process for forming zinc oxide film and processes for producing semiconductor device substrate and photo-electricity generating device using the film.
Cohen, Guy Moshe; Rim, Kern; Rogers, Dennis L.; Schaub, Jeremy Daniel; Yang, Min, Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same.
Kerr, J. Richard; Zuro, Gregory A.; Fossey, Michael E., System for and method of synchronous acquisition of pulsed source light in performance of monitoring aircraft flight operation.
Mazur,Eric; Carey, III,James Edward; Crouch,Catherine H.; Younkin,Rebecca Jane; Wu,Claudia, Systems and methods for light absorption and field emission using microstructured silicon.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.