[특허]Molybdenum barrier metal for SiC Schottky diode and process of manufacture

Molybdenum barrier metal for SiC Schottky diode and process of manufacture 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/28 H01L-021/44 H01L-029/872 H01L-029/16 H01L-029/47 H01L-029/66 H01L-029/06
출원번호	US-0888452 (2007-07-31)
등록번호	US-9496420 (2016-11-15)
발명자 / 주소	Richieri, Giovanni
출원인 / 주소	Vishay-Siliconix
인용정보	피인용 횟수 : 0 인용 특허 : 100

초록 ▼

A method for fabricating a diode is disclosed. In one embodiment, the method includes forming a Schottky contact on an epitaxial layer of silicon carbide (SiC) and annealing the Schottky contact at a temperature in the range of 300° C. to 700° C. The Schottky contact is formed of a layer of molybden

대표청구항 ▼

1. A method for fabricating a diode, said method comprising: forming a Schottky contact on an epitaxial layer of silicon carbide (SiC) wherein a ring termination region is formed in said epitaxial layer of silicon carbide (SiC) below a passivation layer, and wherein said Schottky contact comprises a layer of molybdenum (Mo);annealing said Schottky contact at a temperature in the range of 300° C. to 700° C.;forming an ohmic contact that contacts said passivation layer and said Schottky contact and overlies portions of said ring termination region;forming a layer of amorphous silicon that has a top surface that fully lies underneath and contacts a bottom surface of said ohmic contact and a side surface of said passivation layer wherein at least a portion of said bottom surface of said ohmic contact lies above a structure other than said amorphous silicon; andforming a polyimide layer over said layer of amorphous silicon and over said Schottky contact wherein said layer of amorphous silicon contacts portions of said Schottky contact. 2. The method of claim 1 wherein said forming a Schottky contact that is comprised of Mo provides said diode with greater forward current conduction with less forward voltage applied than a similar diode with a Schottky contact that comprises titanium (Ti). 3. The method of claim 1 further comprising forming an ohmic contact above said layer of molybdenum wherein material used to form said ohmic contact is selected from the group consisting of aluminum (Al), nickel (Ni), titanium (Ti), tungsten (W), copper (Cu) and gold (Au). 4. The method of claim 3 wherein said ohmic contact is formed using a wire bonding process and comprises an aluminum top layer formed over a molybdenum barrier metal which are annealed together during the Schottky contact annealing step using a temperature in the range of 300-700° C. 5. The method of claim 1 further comprising forming a boron termination implant in said epitaxial layer of SiC. 6. The method of claim 5 wherein said boron termination implant is formed using high temperature rapid thermal annealing (HTRTA) with temperature in excess of 1550° C. 7. The method of claim 1 further comprising forming a backside phosphorous termination implant in said epitaxial layer of SiC. 8. The method of claim 1 wherein said layer of molybdenum (Mo) has a thickness that is between 500 angstroms and 2000 angstroms. 9. A method for fabricating a diode, said method comprising: forming a substrate;forming an epitaxial layer of silicon carbide on said substrate;forming an edge termination implant in an edge termination region of said epitaxial layer of silicon carbide (SiC) below a passivation layer;forming a Schottky contact on said epitaxial layer wherein said Schottky contact comprises a layer of molybdenum (Mo);annealing said Schottky contact at a temperature in the range of 300° C. to 700° C.;forming an ohmic contact layer above said Schottky contact that contacts said passivation layer and said Schottky contact and overlies portions of said edge termination implant;forming a backside ohmic contact on a backside of said substrate;forming a layer of amorphous silicon that has a top surface that fully lies underneath and contacts a bottom surface of said ohmic contact and a side surface of said passivation layer wherein at least a portion of said bottom surface of said ohmic contact lies above a structure other than said amorphous silicon; andforming a polyimide layer to contact top and side surfaces of said ohmic contact and a surface of said layer of amorphous silicon and over said Schottky contact wherein said layer of amorphous silicon contacts portions of said Schottky contact. 10. The method of claim 9 wherein said forming said Schottky contact that is comprised of Mo provides said diode with greater forward current conduction with less forward voltage applied than a similar diode with a Schottky contact that comprises titanium (Ti). 11. The method of claim 9 wherein material used to form said ohmic contact is selected from the group consisting of aluminum (Al), nickel (Ni), titanium (Ti), tungsten (W), copper (Cu) and gold (Au). 12. The method of claim 11 wherein said ohmic contact is formed using a wire bonding process and comprises an aluminum top layer formed over a molybdenum barrier metal which are annealed together during the Schottky contact annealing step using a temperature in the range of 300-700° C. 13. The method of claim 9 further comprising forming a boron (B) termination implant in said epitaxial layer of SiC. 14. The method of claim 13 wherein said boron (B) termination implant is formed by high temperature rapid thermal annealing activation (HTRTA). 15. The method of claim 9 further comprising forming a backside phosphorous (P) implant in said epitaxial layer of SiC. 16. The method of claim 9 wherein said layer of molybdenum (Mo) has a thickness that is between 500 angstroms and 2000 angstroms. 17. A Schottky diode comprising: a substrate;an epitaxial layer located adjacent to and above said substrate;an edge termination implant formed in a termination region of said epitaxial layer below a passivation layer;a Schottky contact formed on said epitaxial layer, wherein said Schottky contact comprises a layer of molybdenum;an ohmic contact formed above said Schottky contact that contacts said passivation layer and said Schottky contact and overlies portions of said termination region;a backside ohmic contact formed on a backside of said substrate;forming a layer of amorphous silicon that has a top surface that fully lies underneath and contacts a bottom surface of said ohmic contact and a side surface of said passivation layer wherein at least a portion of said bottom surface of said ohmic contact lies above a structure other than said amorphous silicon; anda polyimide layer formed to contact top and side surfaces of said ohmic contact and a surface of said layer of amorphous silicon and over said Schottky contact wherein said layer of amorphous silicon contacts portions of said Schottky contact. 18. The diode of claim 17 wherein said diode provides greater forward current conduction with less forward voltage applied than a similar diode comprising a Schottky contact made of titanium. 19. The diode of claim 17 further comprising an ohmic contact located above said layer of molybdenum wherein material used to form said ohmic contact is selected from the group consisting of aluminum (Al), nickel (Ni), titanium (Ti), tungsten (W), copper (Cu) and gold (Au). 20. The diode of claim 19 wherein said ohmic contact is formed using a wire bonding process and comprises an aluminum top layer formed over a molybdenum barrier metal which are annealed together during the Schottky contact annealing step using a temperature in the range of 300-700° C. 21. The diode of claim 17 further comprising forming a boron (B) termination implant in said epitaxial layer of SiC. 22. The diode of claim 20 wherein said boron (B) termination implant is formed using (HTRTA) high temperature rapid thermal annealing with a temperature in excess of 1550° C. 23. The diode of claim 17 further comprising forming a backside phosphorous (P) termination implant in said epitaxial layer of SiC. 24. The diode of claim 17 wherein said layer of molybdenum (Mo) has a thickness that is between 500 angstroms and 2000 angstroms.

이 특허에 인용된 특허 (100)

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
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Molybdenum barrier metal for SiC Schottky diode and process of manufacture 원문보기

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Molybdenum barrier metal for SiC Schottky diode and process of manufacture 원문보기

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