Thermoelectric coolers with asymmetric conductance
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0492577
(2014-09-22)
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등록번호 |
US-9506675
(2016-11-29)
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발명자
/ 주소 |
- Campbell, Geoffrey O.
- Lang, Keith
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
3 인용 특허 :
1 |
초록
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A thermoelectric cooler that includes a hot side thermally conducting/electrically insulating cover plate with electrical connectors on the inner surface, a cold side thermally conducting/electrically insulating cover plate, the hot side thermally conducting/electrically insulating cover plate being
A thermoelectric cooler that includes a hot side thermally conducting/electrically insulating cover plate with electrical connectors on the inner surface, a cold side thermally conducting/electrically insulating cover plate, the hot side thermally conducting/electrically insulating cover plate being displaced away from the cold side thermally conducting/electrically insulating cover plate with electrical connectors on the inner surface, one or more thermoelectric elements, each thermoelectric element comprising a p-doped semiconductor element and an n-doped semiconductor element, each one of the p-doped semiconductor element and the n-doped semiconductor element being disposed between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally cover plate, and means for improving thermal conductance to the hot side thermally conducting/electrically insulating cover plate.
대표청구항
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1. A thermoelectric cooler comprising: a hot side thermally conducting/electrically insulating cover plate;a cold side thermally conducting/electrically insulating cover plate, the cold side thermally conducting/electrically insulating cover plate being displaced away from the hot side thermally con
1. A thermoelectric cooler comprising: a hot side thermally conducting/electrically insulating cover plate;a cold side thermally conducting/electrically insulating cover plate, the cold side thermally conducting/electrically insulating cover plate being displaced away from the hot side thermally conducting/electrically insulating cover plate;one or more thermoelectric couples, each thermoelectric couple comprising a p-doped semiconductor element and a n-doped semiconductor element; each one of the p-doped semiconductor element and the n-doped semiconductor element being disposed between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate; said each one of the p-doped semiconductor element and the n-doped semiconductor element being thermally connected to the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate; first electrical connectors being disposed between the hot side thermally conducting/electrically insulating cover plate and the one or more thermoelectric couples and electrically operatively connected to the one or more thermoelectric couples; second electrical connectors being disposed between the cold side thermally conducting/electrically insulating cover plate and the one or more thermoelectric couples and electrically operatively connected to the one or more thermoelectric couples; said each one of the p-doped semiconductor element and the n-doped semiconductor element being electrically connected to each other via the first and second electrical connectors; anda substantially thermally conductive/electrically insulating material disposed between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate and on the hot side thermally conducting/electrically insulating cover plate, the substantially thermally conductive/electrically insulating material partially filling a volume between, the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate; a height of the substantially thermally conductive/electrically insulating material being less than a distance between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate; and the height of the substantially thermally conductive/electrically insulating material is selected in order to obtain predetermined operating characteristic, the predetermined operating characteristics including at least one of temperature differential or heat transport. 2. The thermoelectric cooler of claim 1 wherein the substantially thermally conductive/electrically insulating material is a material selected from at least one of a ceramic, plastic, epoxy, or organic material. 3. The thermoelectric cooler of claim 1 wherein the substantially thermally conductive/electrically insulating material comprises a number of layers of substantially thermally conductive/electrically insulating material. 4. The thermoelectric cooler of claim 3 wherein the number of layers of the substantially thermally conductive/electrically insulating material are selected to obtain predetermined operating characteristics, the predetermined operating characteristics including at least one of temperature differential or heat transport. 5. The thermoelectric cooler of claim 4 wherein the number of layers of the substantially thermally conductive/electrically insulating material are varied based on properties of the p-doped semiconductor element and the n-doped semiconductor element. 6. The thermoelectric cooler of claim 1 wherein the substantially thermally conductive/electrically insulating material and dimensions of the substantially thermally conductive/electrically insulating material are selected in order to obtain predetermined mechanical strength. 7. The thermoelectric cooler of claim 1 wherein a height of the substantially thermally conductive/electrically insulating material is between about 30% to about 40% of a height of the one or more thermoelectric couples. 8. The thermoelectric cooler of claim 1 wherein a cross-sectional area of each of the p-doped semiconductor element and the n-doped semiconductor element varies as a function of distance between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate. 9. The thermoelectric cooler of claim 8 wherein the cross-sectional area of said each of the p-doped semiconductor element and the n-doped semiconductor element decreases as a function of distance away from the hot side thermally conducting/electrically insulating cover plate. 10. The thermoelectric cooler of claim 1 wherein the one or more thermoelectric couples comprise a material selected from at least one of Bi2Te3, Bi2Se3, PbTe, SiGe, inorganic clathrates, magnesium group IV compounds, skudderites, oxides, electrically conducting organic materials, functionally graded materials, or nanomaterials. 11. The thermoelectric cooler of claim 1 wherein the height of the substantially thermally conductive/electrically insulating material is varied based on properties of the p-doped semiconductor element and the n-doped semiconductor element. 12. A method for improving thermal transfer efficiency in a thermoelectric coolers, the method comprising: improving thermal conductance to a hot side thermally conducting/electrically insulating cover plate in the thermoelectric cooler; wherein the thermoelectric cooler includes the hot side thermally conducting/electrically insulating cover plate; a cold side thermally conducting/electrically insulating cover plate; the hot side thermally conducting/electrically insulating cover plate being displaced away from the cold side thermally conducting/electrically insulating cover plate; and one or more thermoelectric couples, each thermoelectric couple comprising a p-doped semiconductor element and a n-doped semiconductor element, each one of the p-doped semiconductor element and the n-doped semiconductor element being disposed between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate, each one of the p-doped semiconductor element and the n-doped semiconductor element being thermally connected to the hot side thermally conducting/electrically insulating cover plate and to the cold side thermally conducting/electrically insulating cover plate; first electrical connectors being disposed between the hot side thermally conducting/electrically insulating cover plate and the one or more thermoelectric couples and electrically operatively connected to the one or more thermoelectric couples; second electrical connectors being disposed between the cold side thermally conducting/electrically insulating cover plate and the one or more thermoelectric couples and electrically operatively connected to the one or more thermoelectric couples; said each one of the p-doped semiconductor element and the n-doped semiconductor element being electrically connected to each other via the first and second electrical connectors;wherein the thermal conductance to the hot side thermally conducting/electrically insulating cover plate in the thermoelectric cooler comprises disposing a substantially thermally conductive/electrically insulating material between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate and on the hot side thermally conducting/electrically insulating cover plate, the substantially thermally conductive/electrically insulating material partially filling a volume between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally cover plate, a height of the substantially thermally conductive/electrically insulating material being less than a distance between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate; andwherein the height of the substantially thermally conductive/electrically insulating material is selected in order to obtain predetermined operating characteristics, the predetermined operating characteristics including at least one of temperature differential or heat transport. 13. The method of claim 12 wherein the substantially thermally conductive/electrically insulating material and dimensions of the substantially thermally conductive/electrically insulating material are selected in order to obtain predetermined mechanical strength. 14. The method of claim 12 wherein a height of the substantially thermally conductive/electrically insulating material is between about 30% to about 40% of a height of the thermoelectric couples. 15. The method of claim 12 wherein improving the thermal conductance to a hot side thermally conducting/electrically insulating cover plate in a thermoelectric cooler further comprises varying a cross-sectional area of each one of the p-doped semiconductor element and the n-doped semiconductor element as a function of distance between the hot side thermally conducting/electrically insulating cover plate and the cold side thermally conducting/electrically insulating cover plate. 16. The method of claim 15 wherein the cross-sectional area of the each one of the p-doped semiconductor element and the n-doped semiconductor element decreases as a function of distance away from the hot side thermally conducting/electrically insulating cover plate.
이 특허에 인용된 특허 (1)
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