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Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/18
  • H01L-031/0224
  • H01L-031/068
  • H01L-031/046
  • H01L-031/056
  • H01L-031/0236
  • H01L-031/0352
  • H01L-031/0445
  • B23K-026/40
출원번호 US-0271212 (2011-10-11)
등록번호 US-9508886 (2016-11-29)
발명자 / 주소
  • Rana, Virendra V.
  • Anbalagan, Pranav
  • Moslehi, Mehrdad M.
출원인 / 주소
  • Solexel, Inc.
대리인 / 주소
    Wood, John
인용정보 피인용 횟수 : 0  인용 특허 : 92

초록

A method for making a crystalline silicon solar cell substrate is provided. A doped dielectric layer is deposited over the backside surface of a crystalline silicon substrate, the doped dielectric layer having a polarity opposite the polarity of the crystalline silicon substrate. Portions of the bac

대표청구항

1. A method for making a crystalline silicon solar cell substrate, comprising the steps of: depositing a doped dielectric layer over the backside surface of a crystalline silicon substrate, said doped dielectric layer having a polarity opposite said polarity of said crystalline silicon substrate;exp

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