초록 ▼

The present invention relates in one aspect to a DC linear voltage regulator circuit for generating a regulated DC output voltage based on a DC input voltage. The DC linear voltage regulator circuit comprises a DMOS pass transistor comprising drain, gate, source and bulk terminals wherein the drain

The present invention relates in one aspect to a DC linear voltage regulator circuit for generating a regulated DC output voltage based on a DC input voltage. The DC linear voltage regulator circuit comprises a DMOS pass transistor comprising drain, gate, source and bulk terminals wherein the drain terminal is connected to a regulator output which is configured to supply the regulated DC output voltage and the source terminal is connected to a regulator input for receipt of the DC input voltage. The DC linear voltage regulator circuit comprises a switchable leakage prevention circuit, connected to the bulk terminal of the DMOS pass transistor, and configured to automatically detect and interrupt a flow of leakage current from the regulator output to the bulk terminal.

대표청구항 ▼

1. A DC voltage regulator circuit, comprising: a DMOS transistor provided in a circuit path between a supply voltage and an output terminal of the voltage regulator circuit, the DMOS transistor having gate, source, drain and bulk terminals,a current leakage protection circuit, comprising a first swi

1. A DC voltage regulator circuit, comprising: a DMOS transistor provided in a circuit path between a supply voltage and an output terminal of the voltage regulator circuit, the DMOS transistor having gate, source, drain and bulk terminals,a current leakage protection circuit, comprising a first switch coupled between the source and bulk terminals of the DMOS transistor and a second switch coupled between the bulk and drain terminals of the DMOS transistor. 2. The circuit of claim 1, wherein the switches receive respective control signals that cause the first switch to become conductive and the second switch to become non-conductive in an ordinary operating condition of the regulator circuit and the first switch to become non-conductive and the second switch to become conductive in a reverse voltage operating condition. 3. The circuit of claim 1, wherein the first switch comprises a DMOS transistor. 4. The circuit of claim 1, wherein the second switch comprises a source-to-drain connected chain of PMOS transistors. 5. The circuit of claim 1, wherein the second switch comprises a MOS transistor having a voltage rating lower than a rating of the DMOS transistor and a resistor string. 6. The circuit of claim 1, wherein the second switch comprises a MOS transistor having a voltage rating lower than a rating of the DMOS transistor and a plurality of capacitors. 7. The circuit of claim 1, further comprising a third switch coupled between the drain and gate terminals of the DMOS transistor. 8. The circuit of claim 7, wherein the third switch is a MOS transistor having a voltage rating lower than a rating of the DMOS transistor, and the circuit further comprises a Zener diode coupled between the source and gate terminals of the DMOS transistor. 9. The circuit of claim 1, further comprising a driver circuit comprising an error amplifier having a first input for a reference voltage and a second input for a test voltage derived from a voltage at the output terminal. 10. A method of protecting a DC voltage regulator circuit, comprising: during an ordinary operating condition of the regulator circuit, rendering conductive a first current path between a source terminal and a bulk terminal of a DMOS transistor located in a circuit path between a supply voltage and an output terminal of the regulator circuit, andrendering non-conductive a second current path between the bulk terminal and a drain terminal of the DMOS transistor; andduring a reverse voltage operating condition of the regulator circuit: rendering non-conductive the first current path, andrendering conductive the second current path. 11. The method of claim 10, wherein: the ordinary operating condition occurs when a magnitude of the supply voltage exceeds a magnitude of a voltage at the output terminal of the regulator circuit,the reverse voltage operating condition occurs when the magnitude of the supply voltage is less than the magnitude of the voltage at the output terminal of the regulator circuit. 12. The method of claim 10, further comprising: during the ordinary operating condition of the regulator circuit, rendering non-conductive a third current path between the drain terminal and a gate terminal of the DMOS transistor; andduring the reverse voltage operating condition, rendering conductive the third current path. 13. The method of claim 10, further comprising driving a control signal to a gate of the DMOS transistor formed from a comparison between a voltage at the output terminal of the regulator circuit and a reference voltage. 14. The method of claim 10, wherein the first and second current paths are rendered conductive and non-conductive by driving control signals to switches within the respective current paths, the control signals causing switches in the first current path to become conductive when the control signals cause switches in the second current path to become non-conductive and the control signals further causing switches in the first current path to become non-conductive when the control signals cause switches in the second current path to become conductive. 15. The method of claim 10, further comprising: sensing the reverse voltage operating condition from measurement of a voltage difference between the supply voltage and the output terminal, andresponsive to the sensing, driving a plurality of cascade connected MOS transistors in the second current path to become conductive. 16. The method of claim 15, wherein the sensing occurs by a resistor string coupled between the supply voltage and the output terminal. 17. The method of claim 15, wherein the sensing occurs by a capacitor string coupled between the supply voltage and the output terminal. 18. The method of claim 10, further comprising: sensing the ordinary operating condition from measurement of a voltage difference between the supply voltage and the output terminal, andresponsive to the sensing, driving a DMOS transistor in the first current path to become conductive.