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An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon c

An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer is on the silicon carbide layer, and an organic protective layer is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.

대표청구항 ▼

1. An edge termination structure for a silicon carbide semiconductor device, comprising: a plurality of spaced apart concentric floating guard rings in a silicon carbide layer, the plurality of spaced apart concentric floating guard rings at least partially surrounding a silicon carbide-based juncti

1. An edge termination structure for a silicon carbide semiconductor device, comprising: a plurality of spaced apart concentric floating guard rings in a silicon carbide layer, the plurality of spaced apart concentric floating guard rings at least partially surrounding a silicon carbide-based junction;a Schottky contact on the silicon carbide layer, the Schottky contact forming a Schottky junction with the silicon carbide layer;an insulating structure on the silicon carbide layer, the insulating structure comprising a passivation layer on the silicon carbide layer and a silicon nitride layer on the passivation layer;an organic protective layer on the silicon nitride layer, wherein the organic protective layer comprises polyimide; anda plurality of silicon carbide surface charge compensation regions between the floating guard rings and adjacent the silicon carbide layer,wherein bottom surfaces of the plurality of floating guard rings are planar and located deeper in the silicon carbide layer than planar bottom surfaces of the plurality of silicon carbide surface charge compensation regionswherein sidewalls of the passivation layer, the silicon nitride layer and the organic protective layer are aligned with a sidewall of the Schottky contact. 2. The edge termination structure of claim 1, wherein the passivation layer comprises an oxide layer on the silicon carbide layer between the silicon carbide layer and the silicon nitride layer. 3. The edge termination structure of claim 2, wherein the passivation layer comprises a thermal oxide layer having a thickness of from about 5 nm to about 100 nm and wherein the silicon nitride layer has a thickness of from about 500 Å to about 1 μm. 4. The edge termination structure of claim 1, wherein the organic protective layer has a higher moisture content than a moisture content of the silicon nitride layer. 5. The edge termination structure of claim 1, wherein the surface charge compensation region is lighter doped than the guard rings. 6. The edge termination structure of claim 1, wherein the surface charge compensation region extends completely between adjacent ones of the floating guard rings. 7. The edge termination structure of claim 1, wherein the surface charge compensation region extends between adjacent ones of the floating guard rings but does not extend completely between two adjacent floating guard rings. 8. The edge termination structure of claim 1, wherein the surface charge compensation region comprises a second silicon carbide layer on the silicon carbide layer. 9. The edge termination structure of claim 1, wherein the surface charge compensation region has a dose charge of from about 1×1012 to about 7×1012 cm −2. 10. The edge termination structure of claim 1, wherein the silicon carbide layer exhibits substantially no anodic oxidation when the device is exposed to a reverse bias voltage cycled between 0 and 600V at 10 kHz in N2 for 350 hours followed by air for 168 hours. 11. The edge termination structure of claim 1, wherein the passivation layer on the silicon carbide layer and the silicon nitride layer on the passivation layer are formed using chemical vapor deposition. 12. The edge termination structure of claim 3, wherein the thermal oxide layer comprise silicon dioxide. 13. The edge terminal structure of claim 3, wherein the insulating structure further comprises an additional thermal oxide layer on the silicon nitride layer and an additional silicon nitride layer on the additional thermal oxide layer. 14. The edge termination structure of claim 1, wherein the organic protection layer extends at least partially onto the Schottky contact. 15. An edge termination structure for a silicon carbide semiconductor device, comprising: a plurality of spaced apart concentric floating guard rings in a silicon carbide layer, the plurality of spaced apart concentric floating guard rings at least partially surrounding a silicon carbide-based junction;a Schottky contact on the silicon carbide layer, the Schottky contact forming a Schottky junction with the silicon carbide layer;an insulating structure on the silicon carbide layer, the insulating structure comprising an oxide layer on the silicon carbide layer;a moisture barrier on the silicon carbide layer, andan environmental protection layer on the moisture barrier, wherein the moisture barrier and the environmental protection layer comprise different materials and wherein the moisture barrier is between the environmental protection layer and the silicon carbide layer; anda plurality of silicon carbide surface charge compensation regions between the floating guard rings and adjacent the silicon carbide layer,wherein bottom surfaces of the plurality of floating guard rings are planar and located deeper in the silicon carbide layer than planar bottom surfaces of the plurality of silicon carbide surface charge compensation regions,wherein sidewalls of the oxide layer, the moisture barrier and the environmental protection layer are aligned with a sidewall of the Schottky contact. 16. The edge termination structure of claim 15, further comprising: a passivation layer between the silicon carbide layer and the moisture barrier layer, wherein the passivation layer and the moisture barrier comprise different materials. 17. The edge termination structure of claim 16, wherein the passivation layer comprises a thermal oxide. 18. The edge termination structure of claim 17, wherein the thermal oxide comprises silicon dioxide. 19. The edge termination structure of claim 16, wherein the moisture barrier comprises silicon nitride. 20. The edge termination structure of claim 16, wherein the environmental protection layer comprises polyimide. 21. The edge termination structure of claim 16, wherein the environmental protection layer extends at least partially onto the Schottky contact.