A method of forming a semiconductor package includes providing a substrate having one or more conductive elements disposed therein. Each conductive element extends from a first surface of the substrate toward a second surface of the substrate extending beyond the second surface. The second surface c
A method of forming a semiconductor package includes providing a substrate having one or more conductive elements disposed therein. Each conductive element extends from a first surface of the substrate toward a second surface of the substrate extending beyond the second surface. The second surface comprises one or more substrate regions not occupied by a conductive element. A first die is attached within a substrate region, and the first die is coupled to at least one of the conductive elements. The first die may be coupled to at least one of the conductive elements by a wire bond connection. Alternatively, an RDL is formed over the second surface, and the first die is coupled to at least one conductive element through the RDL. A second die may be attached to an outer surface of the RDL, and the second die is electrically coupled to the first die through the RDL.
대표청구항▼
1. An integrated circuit package, comprising: a substrate having a first surface and a second surface opposite the first surface;one or more conductive elements passing through the substrate, wherein the one or more conductive elements extend from the first surface of the substrate toward the second
1. An integrated circuit package, comprising: a substrate having a first surface and a second surface opposite the first surface;one or more conductive elements passing through the substrate, wherein the one or more conductive elements extend from the first surface of the substrate toward the second surface of the substrate, and wherein the one or more conductive elements extend beyond the second surface of the substrate, the second surface comprising one or more regions not occupied by the one or more conductive elements;a first component comprising a die, the first component comprising one or more contact areas for contacting a circuitry of the die, the first component being attached within a first one of the one or more regions at the second surface, the first component not laterally extending beyond the one or more regions;a first dielectric layer overlying the second surface but not covering the one or more contact areas and the one or more conductive elements, wherein the second surface is covered by a solid surface spaced from the substrate and comprising at least parts of top surfaces of (a) the first dielectric layer, (b) the one or more contact areas of the first component, and (c) the one or more conductive elements; andone or more interconnect lines overlying the solid surface and coupling at least one said contact area of the first component to at least one of the one or more conductive elements. 2. The integrated circuit package of claim 1 wherein the one or more conductive elements extend from the first surface of the substrate and span part of a distance toward the second surface of the substrate opposite the first surface, and wherein an etch-back process of the second surface of the substrate is performed until the one or more conductive elements extends beyond the second surface of the substrate. 3. The integrated circuit package of claim 1, further comprising a second dielectric layer formed over the second surface, wherein the second dielectric layer covers the one or more regions and the one or more conductive elements; wherein the first component is attached to the second dielectric layer within the first one of the one or more regions at the second surface. 4. The integrated circuit package of claim 3 wherein the second dielectric layer includes at least one of a low-K layer and an organic layer. 5. The integrated circuit package of claim 1, further comprising a device molding configured to protect the integrated circuit package. 6. The integrated circuit package of claim 1, comprising redistribution layer (RDL) having an inner surface and an outer surface, the RDL comprising the one or more interconnect lines, the RDL being formed on said solid surface. 7. The integrated circuit package of claim 6, further comprising: a die attached and electrically coupled to the outer surface of the RDL. 8. The integrated circuit package of claim 6, further comprising: a passive component attached and electrically coupled to the outer surface of the RDL. 9. The integrated circuit package of claim 1 wherein the solid surface is planar. 10. The integrated circuit package of claim 1 wherein the solid surface consists of at least parts of surfaces of the first dielectric layer, the one or more conductive elements, and one or more components comprising the first component and attached to the second surface within the one or more regions, the one or more components not laterally extending beyond the one or more regions. 11. The integrated circuit package of claim 1 wherein the one or more conductive elements are vertical. 12. The integrated circuit package of claim 1 wherein the one or more conductive elements extend in a vertical direction. 13. The integrated circuit package of claim 1 wherein the one or more conductive elements are a plurality of the conductive elements. 14. The integrated circuit package of claim 1 wherein the die comprises one or more vias passing through a semiconductor substrate of the die and providing the one or more contact areas. 15. The integrated circuit package of claim 1 wherein the substrate is a semiconductor substrate comprising at least part of a transistor. 16. An integrated circuit package, comprising: a substrate having a first surface and a second surface opposite the first surface;one or more conductive vias passing through the substrate, wherein the one or more conductive vias extend from the first surface of the substrate toward the second surface of the substrate, and wherein the one or more conductive vias extend beyond the second surface of the substrate to form one or more conductive protrusions each of which comprises one or more contact areas, the second surface comprising one or more regions not occupied by the one or more conductive vias;one or more circuit components, each said component comprising one or more contact areas, each said component being attached within the one or more regions at the second surface, the one or more components not laterally extending beyond the one or more regions;a first dielectric layer overlying the second surface but not the one or more contact areas of the one or more conductive vias and of the one or more components, wherein the substrate is covered by the first dielectric layer and the contact areas of the one or more conductive vias and of the one or more components; andone or more interconnect lines overlying the first dielectric layer and the contact areas of the one or more conductive vias and the one or more components, and coupling at least one said contact area of the one or more components to at least one said contact area of the one or more conductive vias. 17. The integrated circuit package of claim 16 wherein a top surface of the first dielectric layer is coplanar with a top surfaces of the contact areas of the one or more conductive vias and the one or more components. 18. The integrated circuit package of claim 16 wherein the one or more conductive vias are a plurality of the conductive vias, and at least two said conductive vias are located on opposite sides of one of said components. 19. The integrated circuit package of claim 16, comprising a redistribution layer (RDL) formed on the first dielectric layer and on the contact areas of the one or more conductive vias and the one or more components, the RDL comprising the one or more interconnect lines.
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이 특허에 인용된 특허 (9)
Glenn, Thomas P.; Webster, Steven; DiCaprio, Vincent, Chip size semiconductor packages with stacked dies.
Murai Takashi (Futo 1317-1401 Itoh City ; Shizuoka Prefecture JPX), Functional chip to be used while stacked on another chip and stack structure formed by the same.
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