[특허]Semiconductor device

Mitsubishi Electric Corporation

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특허 상세정보

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Semiconductor device

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H03K-003/00 H03K-017/687 F02P-003/055 F02P-003/08 F02P-003/09 H03K-017/082 H03K-017/16
출원번호	US-0766966 (2013-04-02)
등록번호	US-9531377 (2016-12-27)
국제출원번호	PCT/JP2013/060036 (2013-04-02)
국제공개번호	WO2014/162507 (2014-10-09)
발명자 / 주소	Yamamoto, Koji Godo, Shinsuke
출원인 / 주소	Mitsubishi Electric Corporation
대리인 / 주소	Studebaker & Brackett PC
인용정보	피인용 횟수 : 2 인용 특허 : 5

초록
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The present invention has an object to provide a semiconductor device that has protective functions and is capable of achieving miniaturization and cost reduction. A semiconductor device according to the present invention includes a switching element, a drive circuit, and a control circuit. When a high-level drive control signal is output from the drive circuit, the control circuit stops driving of the switching element and charges an electric charge storing capacitor. When a low-level drive control signal is output from the drive circuit, the control ci...

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1. A semiconductor device comprising: a switching element;a drive circuit that outputs, on the basis of a control signal provided from an external control device, a drive control signal for driving said switching element; anda control circuit that controls driving of said switching element on the basis of said drive control signal output from said drive circuit, whereinsaid drive circuit is configured to output said drive control signal in a low level having a relatively low signal level in a case where said control signal is a signal for driving said switching element; andoutput said drive control signal in a high level having a relatively high signal level in a case where said control signal is a signal for stopping the driving of said switching element,said control circuit includes an electric charge storing capacitor for storing electric charges and is configured to stop the driving of said switching element and charge said electric charge storing capacitor in a case where said drive control signal output from said drive circuit is in the high level, anddrive said switching element using electric charges stored in said electric charge storing capacitor in a case where said drive control signal output from said drive circuit is in the low level. 2. The semiconductor device according to claim 1, wherein said control circuit includes a discharge impedance adjustment circuit that adjusts a discharge impedance from said switching element. 3. The semiconductor device according to claim 1, wherein said control circuit includes: an electric-charge-backflow-preventing Schottky barrier diode for preventing a backflow of electric charges from said electric charge storing capacitor; anda field-effect transistor located between an anode and a cathode of said electric-charge-backflow-preventing Schottky barrier diode. 4. The semiconductor device according to claim 1, wherein said control circuit includes an electric discharge regulating circuit that regulates discharge of electric charges stored in said electric charge storing capacitor when said drive control signal output from said drive circuit is switched from the high level to the low level. 5. The semiconductor device according to claim 1, wherein said control circuit includes: a current detection circuit that detects a current flowing through said switching element; anda circuit that increases a consumption current in said control circuit when the current flowing through said switching element and detected by said current detection circuit exceeds a predetermined current value while said drive control signal output from said drive circuit is in the high level. 6. The semiconductor device according to claim 1, wherein said control circuit includes: a current detection circuit that detects a current flowing through said switching element; anda circuit that causes a current to flow through said drive circuit using electric charges stored in said electric charge storing capacitor when the current flowing through said switching element and detected by said current detection circuit exceeds a predetermined current value while said drive control signal output from said drive circuit is in the low level. 7. The semiconductor device according to claim 1, wherein said control circuit includes: a current detection circuit that detects a current flowing through said switching element;a circuit that increases a consumption current in said control circuit when the current flowing through said switching element and detected by said current detection circuit exceeds a predetermined current value while said drive control signal output from said drive circuit is in the high level; anda circuit that causes a current to flow through said drive circuit using electric charges stored in said electric charge storing capacitor when the current flowing through said switching element and detected by said current detection circuit exceeds the predetermined current value while said drive control signal output from said drive circuit is in the low level. 8. The semiconductor device according to claim 1, wherein said control circuit includes: a temperature detection circuit that detects a temperature; anda circuit that increases a consumption current in said control circuit when the temperature detected by said temperature detection circuit exceeds a predetermined temperature while said drive control signal output from said drive circuit is in the high level. 9. The semiconductor device according to claim 1, wherein said control circuit includes: a temperature detection circuit that detects a temperature; anda circuit that causes a current to flow through said drive circuit using electric charges stored in said electric charge storing capacitor when the temperature detected by said temperature detection circuit exceeds a predetermined temperature while said drive control signal output from said drive circuit is in the low level. 10. The semiconductor device according to claim 1, wherein said control circuit includes: a temperature detection circuit that detects a temperature;a circuit that increases a consumption current in said control circuit when the temperature detected by said temperature detection circuit exceeds a predetermined temperature while said drive control signal output from said drive circuit is in the high level; anda circuit that causes a current to flow through said drive circuit using electric charges stored in said electric charge storing capacitor when the temperature detected by said temperature detection circuit exceeds the predetermined temperature while said drive control signal output from said drive circuit is in the low level. 11. The semiconductor device according to claim 5, wherein said control circuit includes a field-effect transistor between said circuit that increases a consumption current and a power source. 12. The semiconductor device according to claim 8, wherein said control circuit includes a field-effect transistor between said circuit that increases a consumption current and a power source. 13. The semiconductor device according to claim 5, wherein said circuit that increases a consumption current is connected with said drive circuit through a Schottky barrier diode. 14. The semiconductor device according to claim 8, wherein said circuit that increases a consumption current is connected with said drive circuit through a Schottky barrier diode. 15. The semiconductor device according to claim 5, wherein said drive circuit has a function of detecting a consumption current in said control circuit as voltage information when said drive control signal is in the high level. 16. The semiconductor device according to claim 6, wherein said drive circuit has a function of detecting a current flowing from said control circuit into said drive circuit as voltage information when said drive control signal is in the low level. 17. The semiconductor device according to claim 7, wherein said drive circuit has: a function of detecting a current consumed by said control circuit as voltage information when said drive control signal is in the high level; anda function of detecting a current flowing from said control circuit into said drive circuit as voltage information when said drive control signal is in the low level. 18. The semiconductor device according to claim 17, wherein the same circuit provides the function of detecting said voltage information in a case where said drive control signal is in the high level and the function of detecting said voltage information in a case where said drive control signal is in the low level. 19. The semiconductor device according to claim 13, wherein said drive circuit limits, through voltage division between a plurality of resistors, said control signal provided from said control device and outputs a resulting control signal to said control circuit as said drive control signal. 20. The semiconductor device according to claim 13, wherein said drive circuit outputs said control signal, provided from said control device, to said control circuit as said drive control signal through a diode.

이 특허에 인용된 특허 (5)

이 특허를 인용한 특허 피인용횟수: 2

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Semiconductor device

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이 특허에 인용된 특허 (5)

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Semiconductor device

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이 특허에 인용된 특허 (5)

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