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SOI substrate, method for manufacturing the same, and semiconductor device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/762
  • H01L-021/84
출원번호 US-0336245 (2014-07-21)
등록번호 US-9536774 (2017-01-03)
우선권정보 JP-2010-097892 (2007-04-03)
발명자 / 주소
  • Ohnuma, Hideto
  • Kakehata, Tetsuya
  • Iikubo, Yoichi
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson Intellectual Property Law Office
인용정보 피인용 횟수 : 0  인용 특허 : 49

초록

An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to

대표청구항

1. A method for bonding a first substrate and a second substrate, comprising the steps of: forming a first insulating film on the first substrate, the first insulating film comprising silicon nitride;forming a second insulating film on the first insulating film by chemical vapor deposition method us

이 특허에 인용된 특허 (49)

  1. Henley Francois J. ; Cheung Nathan W., Controlled cleaning process.
  2. Koezuka,Junichi; Suzuki,Naoki, Doping method and method of manufacturing field effect transistor.
  3. Shunpei Yamazaki JP; Jun Koyama JP; Yoshiharu Hirakata JP; Takeshi Fukunaga JP, Electrooptical device.
  4. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu; Fukunaga, Takeshi, Electrooptical device.
  5. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu; Fukunaga, Takeshi, Electrooptical device.
  6. Yamazaki,Shunpei; Koyama,Jun; Hirakata,Yoshiharu; Fukunaga,Takeshi, Electrooptical device.
  7. Hebras, Xavier, Fabrication of hybrid substrate with defect trapping zone.
  8. Couillard, James G.; Gadkaree, Kishor P.; Mach, Joseph F., Glass-based SOI structures.
  9. Couillard, James G.; Gadkaree, Kishor P.; Mach, Joseph F., Glass-based SOI structures.
  10. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  11. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  12. Couillard,James G.; Gadkaree,Kishor P.; Mach,Joseph F., Glass-based SOI structures.
  13. Couillard,James Gregory; Gadkaree,Kishor Purushottam; Mach,Joseph Frank, Glass-based SOI structures.
  14. Murakami, Satoshi; Godo, Hiromichi; Isobe, Atsuo, Manufacturing method of a semiconductor substrate using a damaged region.
  15. Henley, Francois J., Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process.
  16. Henley, Francois J., Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process.
  17. Henley, Francois J., Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process.
  18. Henley, Francois J., Method and system for continuous large-area scanning implantation process.
  19. So Sang Mun,KRX, Method for fabricating SOI wafer.
  20. Yokokawa Isao,JPX ; Mitani Kiyoshi,JPX, Method for manufacturing bonded wafer and bonded wafer.
  21. Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
  22. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
  23. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  24. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  25. Yamazaki,Shunpei; Ohtani,Hisashi, Method of fabricating a semiconductor device.
  26. Yamazaki, Shunpei; Ohnuma, Hideto, Method of manufacturing SOI substrate and method of manufacturing semiconductor device.
  27. Shunpei Yamazaki JP, Method of manufacturing a semiconductor device.
  28. Takano, Tamae, Method of manufacturing a semiconductor device.
  29. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  30. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  31. Yamazaki, Shunpei, Method of manufacturing a semiconductor device.
  32. Yamazaki,Shunpei, Method of manufacturing a semiconductor device.
  33. Takao Yonehara JP; Kunio Watanabe JP; Tetsuya Shimada JP; Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP, Method of producing semiconductor member.
  34. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
  35. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
  36. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
  37. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  38. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  39. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  40. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  41. Bruel,Michel, Process for the production of thin semiconductor material films.
  42. Yasukawa, Masahiro, SOI SUBSTRATE, ELEMENT SUBSTRATE, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL APPARATUS, ELECTRONIC EQUIPMENT, METHOD OF MANUFACTURING THE SOI SUBSTRATE, METHOD OF MANUFACTURING THE ELEMENT SUBSTRATE, AND .
  43. Yasukawa, Masahiro, SOI substrate, element substrate, semiconductor device, electro-optical apparatus and electronic equipment.
  44. Yasukawa,Masahiro, SOI substrate, element substrate, semiconductor device, electro-optical apparatus, electronic equipment, method of manufacturing the SOI substrate, method of manufacturing the element substrate, and .
  45. Moriwaka, Tomoaki, Semiconductor device and manufacturing method thereof.
  46. Takafuji, Yutaka; Itoga, Takashi, Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate.
  47. Takafuji,Yutaka; Itoga,Takashi, Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate.
  48. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Semiconductor device having an SOI structure and manufacturing method therefor.
  49. Takafuji,Yutaka; Itoga,Takashi, Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device.
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