SOI substrate, method for manufacturing the same, and semiconductor device
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/762
H01L-021/84
출원번호
US-0336245
(2014-07-21)
등록번호
US-9536774
(2017-01-03)
우선권정보
JP-2010-097892 (2007-04-03)
발명자
/ 주소
Ohnuma, Hideto
Kakehata, Tetsuya
Iikubo, Yoichi
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson Intellectual Property Law Office
인용정보
피인용 횟수 :
0인용 특허 :
49
초록▼
An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to
An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
대표청구항▼
1. A method for bonding a first substrate and a second substrate, comprising the steps of: forming a first insulating film on the first substrate, the first insulating film comprising silicon nitride;forming a second insulating film on the first insulating film by chemical vapor deposition method us
1. A method for bonding a first substrate and a second substrate, comprising the steps of: forming a first insulating film on the first substrate, the first insulating film comprising silicon nitride;forming a second insulating film on the first insulating film by chemical vapor deposition method using organic silane gas; andbonding the first substrate and the second substrate with the first insulating film and the second insulating film interposed therebetween. 2. The method according to claim 1, wherein the first substrate is a single-crystal semiconductor substrate. 3. The method according to claim 1, wherein the second substrate is a glass substrate, a quartz glass substrate, or a semiconductor substrate. 4. The method according to claim 1, further comprising the step of: irradiating the first substrate with ion to include an ion-doped layer therein, before bonding. 5. The method according to claim 1, further comprising the step of: separating the first substrate to form a semiconductor layer over the second substrate with the first insulating film and the second insulating film interposed therebetween, after bonding. 6. A method for bonding a first substrate and a second substrate, comprising the steps of: forming a first insulating film on the first substrate, the first insulating film comprising silicon nitride;forming a second insulating film on the first insulating film by chemical vapor deposition method using organic silane gas;forming a third insulating film on the second substrate, the third insulating film comprising silicon oxide; andbonding the first substrate and the second substrate with the first insulating film, the second insulating film, and the third insulating film interposed therebetween. 7. The method according to claim 6, wherein the second substrate is a single-crystal semiconductor substrate. 8. The method according to claim 6, wherein the first substrate is a glass substrate, a quartz glass substrate, or a semiconductor substrate. 9. The method according to claim 6, further comprising the step of: irradiating the second substrate with ion to include an ion-doped layer therein, before bonding. 10. The method according to claim 6, further comprising the step of: separating the second substrate to form a semiconductor layer over the first substrate with the first insulating film, the second insulating film, and the third insulating film interposed therebetween, after bonding. 11. A method for bonding a first substrate and a second substrate, comprising the steps of: forming a first insulating film on the first substrate, the first insulating film comprising silicon nitride;forming a second insulating film on the first insulating film by chemical vapor deposition method using organic silane gas;forming a third insulating film on the second substrate by chemical vapor deposition method using organic silane gas; andbonding the first substrate and the second substrate with the first insulating film, the second insulating film, and the third insulating film interposed therebetween. 12. The method according to claim 11, wherein the second substrate is a single-crystal semiconductor substrate. 13. The method according to claim 11, wherein the first substrate is a glass substrate, a quartz glass substrate, or a semiconductor substrate. 14. The method according to claim 11, further comprising the step of: irradiating the second substrate with ion to include an ion-doped layer therein, before bonding. 15. The method according to claim 11, further comprising the step of: separating the second substrate to form a semiconductor layer over the first substrate with the first insulating film and the second insulating film interposed therebetween, after bonding.
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