Transparent group III metal nitride and method of manufacture
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-029/20
C30B-029/40
H01L-029/04
H01L-029/36
H01L-021/02
C30B-007/10
출원번호
US-0485516
(2014-09-12)
등록번호
US-9543392
(2017-01-10)
발명자
/ 주소
Jiang, Wenkan
Ehrentraut, Dirk
D'Evelyn, Mark P.
출원인 / 주소
Soraa, Inc.
대리인 / 주소
Saul Ewing LLP
인용정보
피인용 횟수 :
0인용 특허 :
117
초록▼
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammon
Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.
대표청구항▼
1. A gallium-containing nitride crystal comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane;a substantially wurtzite structure;n-type electronic properties;an impurity concentration greater than about
1. A gallium-containing nitride crystal comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane;a substantially wurtzite structure;n-type electronic properties;an impurity concentration greater than about 2×1017 cm−3 of hydrogen;an impurity concentration less than about 1×1017 cm−3 of oxygen;an H/O ratio of at least 10;an impurity concentration greater than about 2×1014 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;an optical absorption coefficient less than about 5 cm−1 at a wavelength of 400 nanometers;an optical absorption coefficient less than about 4 cm−1 at a wavelength of 410 nanometers;an optical absorption coefficient less than about 3 cm−1 at a wavelength of 415 nanometers; andan optical absorption coefficient less than about 2 cm−1 at a wavelength of 450 nanometers;wherein the gallium-containing nitride crystal is characterized by, an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of 3218 cm−1, 3202 cm−1, and 3188 cm−1; andno infrared absorption peaks at wavenumbers between about 3175 cm−1 and about 3000 cm−1 having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3218 cm−1. 2. The gallium-containing nitride crystal of claim 1, characterized by a carrier concentration n between about 1016 cm−3 and 1020 cm−3 and a carrier mobility η, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η is greater than −0.018557[log10(n)]3+1.0671[log10(n)]2−20.599[log10(n)]+135.49. 3. The gallium-containing nitride crystal of claim 1, further comprising an impurity concentration of at least one of silicon and germanium between about 1×1017 cm−3 and about 3×1018 cm−3. 4. The gallium-containing nitride crystal of claim 1, wherein the carrier concentration is between about 3×1017 cm−3 and about 3×1018 cm−3. 5. The gallium-containing nitride crystal of claim 1, wherein the top surface has a diameter greater than about 10 millimeters and the crystal has a thickness greater than about 100 micrometers. 6. The gallium-containing nitride crystal of claim 1, comprising an impurity concentration of at least one of F and Cl between about 2×1014 cm−3 and about 5×1017 cm−3. 7. A device comprising the gallium-containing nitride crystal of claim 1. 8. A gallium-containing nitride crystal comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane;a substantially wurtzite structure;n-type electronic properties;an impurity concentration greater than about 5×1017 cm−3 of hydrogen;an impurity concentration between about 2×1017 cm−3 and about 4×1018 cm−3 of oxygen;an H/O ratio of at least 0.3;an impurity concentration greater than about 1×1016 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;an optical absorption coefficient less than about 8 cm−1 at a wavelength of 400 nanometers;an optical absorption coefficient less than about 6 cm−1 at a wavelength of 410 nanometers;an optical absorption coefficient less than about 5.5 cm−1 at a wavelength of 415 nanometers;an optical absorption coefficient less than about 4 cm−1 at a wavelength of 450 nanometers;an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1;no infrared absorption peaks at wavenumbers between about 3200 cm−1 and about 3400 cm−1 or between about 3075 cm−1 and about 3125 cm−1 having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm−1. 9. The gallium-containing nitride crystal of claim 8, characterized by a carrier concentration n between about 1016 cm−3 and 1020 cm−3 and a carrier mobility η, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η is greater than −0.018557[log10(n)]3+1.0671[log10(n)]2−20.599[log10(n)]+135.49. 10. The gallium-containing nitride crystal of claim 8, further comprising an impurity concentration of at least one of silicon and germanium between about 1×1017 cm−3 and about 3×1018 cm−3. 11. The gallium-containing nitride crystal of claim 8, wherein the carrier concentration is between about 3×1017 cm−3 and about 3×1018 cm−3. 12. The gallium-containing nitride crystal of claim 8, wherein the top surface has a diameter greater than about 10 millimeters and the crystal has a thickness greater than about 100 micrometers. 13. The gallium-containing nitride crystal of claim 8, characterized by, an optical absorption coefficient less than about 4 cm−1 at a wavelength of 400 nanometers;an optical absorption coefficient less than about 3 cm−1 at a wavelength of 410 nanometers;an optical absorption coefficient less than about 2.5 cm−1 at a wavelength of 415 nanometers; andan optical absorption coefficient less than about 1.5 cm−1 at a wavelength of 450 nanometers. 14. The gallium-containing nitride crystal of claim 8, characterized by, an optical absorption coefficient less than about 3 cm−1 at a wavelength of 400 nanometers;an optical absorption coefficient less than about 2.2 cm−1 at a wavelength of 410 nanometers;an optical absorption coefficient less than about 2.0 cm−1 at a wavelength of 415 nanometers; andan optical absorption coefficient less than about 1.0 cm−1 at a wavelength of 450 nanometers. 15. A device comprising the gallium-containing nitride crystal of claim 8. 16. A gallium-containing nitride crystal comprising: a top surface having a crystallographic orientation within about 5 degrees of a {1 0-1 0} m-plane;a substantially wurtzite structure;n-type electronic properties;an impurity concentration greater than about 3×1018 cm−3 of hydrogen;an impurity concentration between about 5×1017 cm−3 and about 3×1019 cm−3 of oxygen;an H/O ratio of at least 1.1;an impurity concentration greater than about 1×1016 cm−3 of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl;an optical absorption coefficient less than about 8 cm−1 at a wavelength of 400 nanometers;an optical absorption coefficient less than about 6 cm−1 at a wavelength of 410 nanometers;an optical absorption coefficient less than about 5.5 cm−1 at a wavelength of 415 nanometers;an optical absorption coefficient less than about 4 cm−1 at a wavelength of 450 nanometers;an absorbance per unit thickness of at least 0.01 cm−1 at 3188 cm−1, 3175 cm−1, 3164 cm−1, and 3150 cm−1; andno infrared absorption peaks at wavenumbers between about 3125 cm−1 and about 3000 cm−1, having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3188 cm−1. 17. The gallium-containing nitride crystal of claim 16, characterized by a carrier concentration n between about 1016 cm−3 and 1020 cm−3 and a carrier mobility η, in units of centimeters squared per volt-second, such that the logarithm to the base 10 of η is greater than −0.018557[log10(n)]3+1.0671[log10(n)]2−20.599[log10(n)]+135.49. 18. The gallium-containing nitride crystal of claim 16, wherein the absorbance per unit thickness at 3232 cm−1 is at least 0.01 cm−1. 19. The gallium-containing nitride crystal of claim 16, further comprising an impurity concentration of at least one of silicon and germanium between about 1×1017 cm−3 and about 3×1018 cm−3. 20. The gallium-containing nitride crystal of claim 16, wherein the carrier concentration is between about 3×1017 cm−3 and about 3×1018 cm−3. 21. The gallium-containing nitride crystal of claim 16, wherein the top surface has a diameter greater than about 10 millimeters and the crystal has a thickness greater than about 100 micrometers. 22. A device comprising the gallium-containing nitride crystal of claim 16.
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