Temperature sensor circuit and integrated circuit
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G05F-001/46
H03K-017/687
출원번호
US-0941151
(2015-11-13)
등록번호
US-9547321
(2017-01-17)
우선권정보
JP-2014-260847 (2014-12-24)
발명자
/ 주소
Arai, Tomoyuki
출원인 / 주소
SOCIONEXT INC.
대리인 / 주소
Arent Fox LLP
인용정보
피인용 횟수 :
0인용 특허 :
5
초록▼
A temperature sensor circuit includes: an output circuit including a first field-effect transistor configured to output a current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; and a voltage generating circui
A temperature sensor circuit includes: an output circuit including a first field-effect transistor configured to output a current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; and a voltage generating circuit configured to generate the voltage twice as high as the threshold voltage by a plurality of field-effect transistors and supply the generated voltage twice as high as the threshold voltage to the gate of the first field-effect transistor.
대표청구항▼
1. A temperature sensor circuit comprising: an output circuit including a first field-effect transistor configured to output a current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; anda voltage generating ci
1. A temperature sensor circuit comprising: an output circuit including a first field-effect transistor configured to output a current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; anda voltage generating circuit configured to generate the voltage twice as high as the threshold voltage by a plurality of field-effect transistors and supply the generated voltage twice as high as the threshold voltage to the gate of the first field-effect transistor. 2. The temperature sensor circuit according to claim 1, wherein transistors in the voltage generating circuit are all field-effect transistors. 3. The temperature sensor circuit according to claim 1, wherein the voltage generating circuit includes: a second field-effect transistor having a source connected to a first potential node, and a gate and a drain connected to each other;a third field-effect transistor having a source connected to the first potential node, a gate connected to the gate of the second field-effect transistor, and a drain connected to the gate of the first field-effect transistor;a fourth field-effect transistor having a source connected to the drain of the second field-effect transistor, and a gate and a drain connected to each other;a fifth field-effect transistor having a source connected to the drain of the fourth field-effect transistor, and a gate and a drain connected to a second potential node; anda sixth field-effect transistor having a source connected to the drain of the third field-effect transistor, a gate connected to the gate of the fifth field-effect transistor, and a drain connected to a third potential node. 4. The temperature sensor circuit according to claim 3, wherein the voltage generating circuit further includes: a seventh field-effect transistor having a drain and a gate connected to a current source, and a source connected to a fourth potential node;an eighth field-effect transistor having a drain connected to the drain of the fifth field-effect transistor, a gate connected to the gate of the seventh field-effect transistor, and a source connected to the fourth potential node; anda ninth field-effect transistor having a drain and a gate connected to the drain of the sixth field-effect transistor, and a source connected to the fourth potential node. 5. The temperature sensor circuit according to claim 3, wherein a gate width of the sixth field-effect transistor is changeable according to a control signal. 6. The temperature sensor circuit according to claim 5, wherein: the sixth field-effect transistor includes a plurality of element transistors provided in parallel between the drain of the third field-effect transistor and the third potential node; andthe gate width of the sixth field-effect transistor is changed by changing the number of element transistors, out of the plural element transistors, whose gates are connected to the gate of the fifth field-effect transistor, according to the control signal. 7. The temperature sensor circuit according to claim 1, wherein the voltage generating circuit includes: a second field-effect transistor having a source connected to a first potential node, and a gate and a drain connected to each other;a third field-effect transistor having a source connected to the first potential node, and a gate connected to the gate of the second field-effect transistor;a fourth field-effect transistor having a source connected to the drain of the second field-effect transistor, and a gate and a drain connected to a second potential node;a fifth field-effect transistor having a source connected to a drain of the third field-effect transistor, a gate connected to the gate of the fourth field-effect transistor, and a drain connected to a third potential node; andan amplifier circuit configured to supply a voltage twice as high as a source voltage of the fifth field-effect transistor to the gate of the first field-effect transistor. 8. The temperature sensor circuit according to claim 7, wherein the voltage generating circuit further includes: a sixth field-effect transistor having a drain and a gate connected to a current source, and a source connected to a fourth potential node;a seventh field-effect transistor having a drain connected to the drain of the fourth field-effect transistor, a gate connected to the gate of the sixth field-effect transistor, and a source connected to the fourth potential node; andan eighth field-effect transistor having a drain and a gate connected to the drain of the fifth field-effect transistor, and a source connected to the fourth potential node. 9. The temperature sensor circuit according to claim 7, wherein a gate width of the fifth field-effect transistor is changeable according to a control signal. 10. The temperature sensor circuit according to claim 9, wherein: the fifth field-effect transistor includes a plurality of element transistors provided in parallel between the drain of the third field-effect transistor and the third potential node; andthe gate width of the fifth field-effect transistor is changed by changing the number of element transistors, out of the plural element transistors, whose gates are connected to the gate of the fourth field-effect transistor, according to the control signal. 11. An integrated circuit comprising: a temperature sensor circuit configured to output a current proportional to temperature; anda processing circuit configured to perform processing according to the current proportional to temperature, wherein the temperature sensor circuit includes:an output circuit including a first field-effect transistor configured to output the current proportional to temperature when a voltage twice as high as a threshold voltage is applied to a gate of the first field-effect transistor; anda voltage generating circuit configured to generate the voltage twice as high as the threshold voltage by a plurality of field-effect transistors and supply the generated voltage twice as high as the threshold voltage to the gate of the first field-effect transistor. 12. The integrated circuit according to claim 11, wherein transistors in the voltage generating circuit are all field-effect transistors. 13. The integrated circuit according to claim 11, wherein the voltage generating circuit includes: a second field-effect transistor having a source connected to a first potential node, and a gate and a drain connected to each other;a third field-effect transistor having a source connected to the first potential node, a gate connected to the gate of the second field-effect transistor, and a drain connected to the gate of the first field-effect transistor;a fourth field-effect transistor having a source connected to the drain of the second field-effect transistor, and a gate and a drain connected to each other;a fifth field-effect transistor having a source connected to the drain of the fourth field-effect transistor, and a gate and a drain connected to a second potential node; anda sixth field-effect transistor having a source connected to the drain of the third field-effect transistor, a gate connected to the gate of the fifth field-effect transistor, and a drain connected to a third potential node. 14. The integrated circuit according to claim 13, wherein the voltage generating circuit further includes: a seventh field-effect transistor having a drain and a gate connected to a current source, and a source connected to a fourth potential node;an eighth field-effect transistor having a drain connected to the drain of the fifth field-effect transistor, a gate connected to the gate of the seventh field-effect transistor, and a source connected to the fourth potential node; anda ninth field-effect transistor having a drain and a gate connected to the drain of the sixth field-effect transistor, and a source connected to the fourth potential node. 15. The integrated circuit according to claim 13, wherein a gate width of the sixth field-effect transistor is changeable according to a control signal. 16. The integrated circuit according to claim 15, wherein: the sixth field-effect transistor includes a plurality of element transistors provided in parallel between the drain of the third field-effect transistor and the third potential node; andthe gate width of the sixth field-effect transistor is changed by changing the number of element transistors, out of the plural element transistors, whose gates are connected to the gate of the fifth field-effect transistor, according to the control signal. 17. The integrated circuit according to claim 11, wherein the voltage generating circuit includes: a second field-effect transistor having a source connected to a first potential node, and a gate and a drain connected to each other;a third field-effect transistor having a source connected to the first potential node, and a gate connected to the gate of the second field-effect transistor;a fourth field-effect transistor having a source connected to the drain of the second field-effect transistor, and a gate and a drain connected to a second potential node;a fifth field-effect transistor having a source connected to a drain of the third field-effect transistor, a gate connected to the gate of the fourth field-effect transistor, and a drain connected to a third potential node; andan amplifier circuit configured to supply a voltage twice as high as a source voltage of the fifth field-effect transistor to the gate of the first field-effect transistor. 18. The integrated circuit according to claim 17, wherein the voltage generating circuit further includes: a sixth field-effect transistor having a drain and a gate connected to a current source, and a source connected to a fourth potential node;a seventh field-effect transistor having a drain connected to the drain of the fourth field-effect transistor, a gate connected to the gate of the sixth field-effect transistor, and a source connected to the fourth potential node; andan eighth field-effect transistor having a drain and a gate connected to the drain of the fifth field-effect transistor, and a source connected to the fourth potential node. 19. The integrated circuit according to claim 17, wherein a gate width of the fifth field-effect transistor is changeable according to a control signal. 20. The integrated circuit according to claim 19, wherein: the fifth field-effect transistor includes a plurality of element transistors provided in parallel between the drain of the third field-effect transistor and the third potential node; andthe gate width of the fifth field-effect transistor is changed by changing the number of element transistors, out of the plural element transistors, whose gates are connected to the gate of the fourth field-effect transistor, according to the control signal. 21. The integrated circuit according to claim 11, wherein the processing circuit is a parallel-serial converter configured to convert a parallel signal to a serial signal or a serial parallel converter configured to convert a serial signal to a parallel signal.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (5)
Behzad, Arya Reza, High temperature coefficient MOS bias generation circuit.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.