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High power insulated gate bipolar transistors

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/66
  • H01L-029/16
  • H01L-029/739
  • H01L-021/02
  • H01L-021/04
  • H01L-021/225
  • H01L-021/265
  • H01L-021/324
  • H01L-029/10
출원번호 US-0260717 (2014-04-24)
등록번호 US-9548374 (2017-01-17)
발명자 / 주소
  • Zhang, Qingchun
  • Ryu, Sei-Hyung
  • Jonas, Charlotte
  • Agarwal, Anant K.
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Myers Bigel, P.A.
인용정보 피인용 횟수 : 1  인용 특허 : 151

초록

A method of forming a transistor device include forming a drift layer of a first conductivity type, forming a well of a second conductivity type in the drift layer, forming a JFET region with first conductivity type dopant ions in the drift layer, forming a channel adjustment layer of the first cond

대표청구항

1. A method of forming an insulated gate bipolar transistor (IGBT) device, comprising: forming a p-type drift layer;forming an n-type well in the p-type drift layer;epitaxially growing a p-type channel adjustment layer on the p-type drift layer and on the n-type well;implanting p-type dopant ions to

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이 특허를 인용한 특허 (1)

  1. Zhang, Qingchun, Optically assist-triggered wide bandgap thyristors having positive temperature coefficients.

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