Devices including a multilayer gas barrier layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G11B-011/00
G11B-005/31
G11B-005/00
출원번호
US-0918694
(2015-10-21)
등록번호
US-9552833
(2017-01-24)
발명자
/ 주소
Cheng, Yuhang
Wierman, Kurt W.
Seigler, Michael
Franzen, Scott
출원인 / 주소
Seagate Technology LLC
대리인 / 주소
Mueting, Raasch & Gebhardt, P.A.
인용정보
피인용 횟수 :
1인용 특허 :
23
초록▼
Devices that include a near field transducer (NFT); a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer including at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, th
Devices that include a near field transducer (NFT); a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer including at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; and a wear resistance layer positioned on at least a portion of the gas barrier layer.
대표청구항▼
1. A device comprising: a near field transducer (NFT);a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer,
1. A device comprising: a near field transducer (NFT);a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm; anda wear resistance layer positioned on at least a portion of the gas barrier layer. 2. The device according to claim 1, wherein the first and second sublayers are made of the same material. 3. The device according to claim 1, wherein the first and second sublayers are made of different materials. 4. The device according to claim 1, wherein the first and second sublayers independently comprise oxides, nitrides, carbides, silicides, borides, fluorides, metals, or combinations thereof. 5. The device according to claim 1, wherein the first and second sublayers independently comprise tantalum oxide (TaO), chromium oxide (CrO), or combinations thereof. 6. The device according to claim 1, wherein the first and second sublayers independently comprise titanium aluminum oxide (TiAlO), tantalum aluminum oxide (TaAlO), tantalum silicon oxide (TaSiO), titanium aluminum silicon oxide (TiAlSiO), or combinations thereof. 7. The device according to claim 1, wherein the first and second sublayers independently comprise aluminum nitride (AlN), tantalum nitride (TaN), or some combination thereof. 8. The device according to claim 1, wherein the first and second sublayers independently comprise titanium aluminum nitride (TiAlN), titanium silicon nitride (TiSiN), aluminum silicon nitride (AlSiN), tantalum silicon nitride (TaSiN), tantalum aluminum nitride (TaAlN), carbon silicon nitride (CSiN), titanium aluminum silicon nitride (TiAlSiN), or combinations thereof. 9. The device according to claim 1, wherein the first and second sublayers independently comprise one or more fluorides. 10. The device according to claim 1, wherein the first and second sublayers independently comprise chromium fluoride (CrF2), magnesium fluoride (MgF2), silicon fluoride (SiF), or combinations thereof. 11. The device according to claim 1, wherein the first and second sublayers independently comprise one or more borides. 12. The device according to claim 1, wherein the first and second sublayers independently comprise titanium boride (TiB2), chromium boride (CrB), zirconium boride (ZrB), or combinations thereof. 13. The device according to claim 1, wherein the first and second sublayers independently comprise silicon aluminum oxy nitride (SiAlON), titanium silicon oxy nitride (TiSiON), titanium aluminum silicon oxy nitride (TiAlSiON), tantalum silicon oxy nitride (TaSiON), titanium aluminum oxy nitride (TiAlON), tantalum aluminum oxy nitride (TaAlON), tantalum oxy nitride (TaON), or combinations thereof. 14. The device according to claim 1, wherein the first and second sublayers independently comprise titanium (Ti), chromium (Cr), niobium (Nb), hafnium (Hf), nickel (Ni), zirconium (Zr), or combinations thereof. 15. The device according to claim 1 further comprising a NFT adhesion layer and a wear resistance adhesion layer, wherein the NFT adhesion layer is positioned between the NFT and the multilayer gas barrier layer and the wear resistance adhesion layer is positioned between the multilayer gas barrier layer and the wear resistance layer. 16. A device comprising: a near field transducer (NFT);a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently comprise a fluoride or a metal; anda wear resistance layer positioned on at least a portion of the gas barrier layer. 17. The device according to claim 16, wherein the first and second sublayers independently have thicknesses from 0.01 nm to 5 nm. 18. The device according to claim 16, wherein the first and second sublayers independently comprise chromium fluoride (CrF2), magnesium fluoride (MgF2), silicon fluoride (SiF), or combinations thereof. 19. The device according to claim 16, wherein the first and second sublayers independently comprise titanium (Ti), chromium (Cr), niobium (Nb), hafnium (Hf), nickel (Ni), zirconium (Zr), or combinations thereof. 20. A device comprising: a near field transducer (NFT);a multilayer gas barrier layer positioned on at least a portion of the NFT, the multilayer gas barrier layer comprising at least a first and a second sublayer, where the second gas barrier sublayer is positioned on the first gas barrier sublayer, the first gas barrier sublayer is positioned adjacent the NFT and the second gas barrier sublayer is positioned adjacent the wear resistant layer, the first and second sublayers independently comprise a fluoride or a metal;a wear resistance layer positioned on at least a portion of the gas barrier layer; anda NFT adhesion layer positioned between the multilayer gas barrier layer and the NFT.
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