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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0935771 (2015-11-09) |
| 등록번호 | US-9554213 (2017-01-24) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 0 인용 특허 : 415 |
A micromechanical structure, comprising a substrate having a through hole; a residual portion of a sacrificial oxide layer peripheral to the hole; and a polysilicon layer overlying the hole, patterned to have a planar portion; a supporting portion connecting the planar portion to polysilicon on the
A micromechanical structure, comprising a substrate having a through hole; a residual portion of a sacrificial oxide layer peripheral to the hole; and a polysilicon layer overlying the hole, patterned to have a planar portion; a supporting portion connecting the planar portion to polysilicon on the residual portion; polysilicon stiffeners formed extending beneath the planar portion overlying the hole; and polysilicon ribs surrounding the supporting portion, attached near a periphery of the planar portion. The polysilicon ribs extend to a depth beyond the stiffeners, and extend laterally beyond an edge of the planar portion. The polysilicon ribs are released from the substrate during manufacturing after the planar region, and reduce stress on the supporting portion.
1. A micromechanical structure, comprising: a substrate having a through hole;a residual portion of a sacrificial oxide layer peripheral to the through hole formed on the substrate; anda polysilicon layer overlying the through hole, patterned to have: a planar portion;at least one supporting portion
1. A micromechanical structure, comprising: a substrate having a through hole;a residual portion of a sacrificial oxide layer peripheral to the through hole formed on the substrate; anda polysilicon layer overlying the through hole, patterned to have: a planar portion;at least one supporting portion connecting the planar portion overlying the through hole to a portion of the polysilicon layer supported on the residual portion of the sacrificial oxide layer peripheral to the through hole, the at least one supporting portion being configured to permit movement of the planar portion with respect to the substrate;a first pattern of polysilicon stiffeners formed extending beneath the planar portion overlying the through hole, the first pattern of polysilicon stiffeners having a first depth and being configured to stiffen the planar portion; anda second pattern of polysilicon ribs selectively disposed proximate to the at least one supporting portion, attached near a periphery of the planar portion, wherein the polysilicon ribs extend from the planar portion to a depth beyond a depth of the polysilicon stiffeners, and extend laterally beyond an edge of the planar portion. 2. The micromechanical structure according to claim 1, wherein the polysilicon ribs have a height at least 10 times a thickness of the planar portion. 3. The micromechanical structure according to claim 1, wherein the polysilicon stiffeners intersect the polysilicon ribs. 4. The micromechanical structure according to claim 1, wherein at least a portion of the first pattern of polysilicon stiffeners is configured as a set of fingers which interdigitate with a corresponding set of fingers, formed of polysilicon, extending from a portion of the polysilicon layer on the residual portion of the sacrificial oxide layer peripheral to the through hole, wherein the planar portion is configured to move, by at least one of a flexion and a torsion of the at least one supporting region, to thereby cause a relative movement of the set of fingers with respect to the corresponding set of fingers out of a plane of the planar portion. 5. The micromechanical structure according to claim 4, wherein the set of fingers and the corresponding set of fingers are conductive and electrically isolated from each other, and are configured to act as a capacitive displacement sensor. 6. The micromechanical structure according to claim 4, wherein the planar portion is configured to move with respect to the substrate in response to acoustic vibrations. 7. The micromechanical structure according to claim 4, wherein the planar portion comprises a diaphragm of a directional microphone and is supported by a pair of opposed supporting portions, and is configured to rotate in response to acoustic vibrations about an axis defined by the pair of opposed supporting portions. 8. The micromechanical structure according to claim 1, wherein a plurality of independently movable planar portions are provided over a plurality of respective through holes on an integral substrate, in an array. 9. A micromechanical structure, comprising: a substrate having at least one through hole;a residual portion of a sacrificial oxide layer peripheral to the at least one through hole formed on the substrate; anda polysilicon layer overlying the at least one through hole and the residual portion of the sacrificial oxide layer;each respective through hole being associated with a patterned region of the polysilicon layer comprising: a planar portion overlying the respective through hole;at least one supporting portion connecting a the planar portion to a portion of the polysilicon layer on the residual portion of the sacrificial oxide layer peripheral to the respective through hole, being configured to permit movement of the planar portion with respect to the substrate;a first pattern of polysilicon stiffeners formed extending beneath the planar portion overlying the respective through hole, configured to stiffen the planar portion; anda second pattern of polysilicon ribs selectively disposed surrounding the at least one supporting portion, attached near a periphery of the planar portion, wherein the polysilicon ribs extend from the planar portion to a depth beyond a depth of the polysilicon stiffeners, and extend laterally beyond an edge of the respective planar portion. 10. The micromechanical structure array according to claim 9, wherein the polysilicon ribs have a height at least 10 times a thickness of the respective planar portion, and the polysilicon stiffeners intersect the polysilicon ribs. 11. The micromechanical structure array according to claim 9, wherein at least a portion of the second pattern of polysilicon ribs is configured as a set of fingers which interdigitate with a corresponding set of fingers, formed of polysilicon, extending from a portion of the polysilicon layer on the residual portion of the sacrificial oxide layer peripheral to the at least one through hole, wherein the respective planar portion is configured to move, by a flexion or torsion of the at least one supporting portion, to thereby cause a relative movement of the set of fingers with respect to the corresponding set of fingers out of a plane of the respective planar portion. 12. The micromechanical structure array according to claim 11, wherein the set of fingers and the corresponding set of fingers are conductive and electrically isolated from each other, and are together configured to act as a capacitive displacement sensor. 13. The micromechanical structure array according to claim 11, wherein a respective planar portion comprises a diaphragm of a directional microphone and is supported by a pair of opposed supporting portions, the diaphragm being configured to rotate in response to acoustic vibrations about an axis defined by the pair of opposed supporting portions. 14. A micromechanical structure, comprising: at least one trench etched into a substrate;a sacrificial layer formed on the substrate and walls of the at least one trench;a structural layer deposited over the sacrificial layer and the trench, having at least one separated structure having a respective peripheral boundary etched from the structural layer, wherein at least a portion of the structural layer overlying portions of the at least one trench is removed, exposing a portion of the structural layer extending into the at least one trench preserved at the respective peripheral boundary, to thereby define a respective supporting member which extends across the peripheral boundary; andat least one void formed through the substrate and the sacrificial layer, configured to expose an underside of the structural layer;wherein the sacrificial layer has higher residual compressive stresses than the structural layer, such that an unconstrained region of the sacrificial layer adjacent to the structural layer is subject to mechanical distortion in response to a difference in the respective residual compressive stresses, and the portion of the sacrificial layer surrounding the exposed portion of the structural layer extending into the trench preserved at the peripheral boundary is configured to be preserved during a removal of the sacrificial layer under the structural layer through the substrate during a formation of the at least one void to prevent damage to the structural layer, and to be removed after formation of the at least one void. 15. The micromechanical structure according to claim 14, the at least one portion of the structural layer separated from the substrate by a fluid space and is flexibly supported by a narrow portion of the structural layer prone to damage due to mechanical distortion, and the at least one trench is formed proximate to the narrow portion, the sacrificial layer underlying the narrow portion being removed before the sacrificial layer on the walls of the at least one trench, such that the narrow portion remains held in position by the structural layer which extends into the at least one trench while the sacrificial layer underlying the structural layer in regions absent the at least one trench is removed before the sacrificial layer adjacent to the structural layer which extends into the at least one trench, the sacrificial layer being removed sufficiently such that the structural layer which extends into the at least one trench is free to move into and out of the trench by a flexion or torsion of the narrow portion. 16. The micromechanical structure according to claim 15, wherein the substrate comprises silicon, the sacrificial layer comprises silicon dioxide formed by oxidizing a surface of the silicon substrate, and the structural layer comprises polysilicon. 17. The micromechanical structure according to claim 15, wherein the at least one trench comprises at least two trenches, having respectively different depths, wherein the deeper trench is formed proximate to the narrow portion, to thereby support the narrow portion while the sacrificial layer on the walls of the shallower trench is removed. 18. The micromechanical structure according to claim 14, wherein the at least one separated structure has a set of interdigitated fingers at a peripheral edge, and the interdigitated fingers have a depth greater than about ten times a thickness of the structural layer. 19. The micromechanical structure according to claim 14, wherein the at least one separated structure comprises a diaphragm of a microphone and has a set of conductive interdigitated fingers at a peripheral edge of the diaphragm forming part of a capacitive displacement sensor, the diaphragm being displaceable in response to acoustic vibrations. 20. The micromechanical structure according to claim 14, wherein a plurality of separated structures are formed on the substrate, each separated structure comprising a diaphragm of a microphone, the plurality of separated structures together forming a microphone diaphragm array.
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