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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0050150 (2013-10-09) |
등록번호 | US-9556516 (2017-01-31) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 21 인용 특허 : 631 |
A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; co
A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH3-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.
1. A method for forming a TiN film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), said PEALD comprising multiple deposition cycles, each deposition cycle comprising: (i) introducing TDMAT and/
1. A method for forming a TiN film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), said PEALD comprising multiple deposition cycles, each deposition cycle comprising: (i) introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed;(ii) continuously introducing a NH3-free reactant gas to the reaction space, wherein the NH3-free reactant gas contains neither nitrogen nor oxygen atoms and wherein the NH3-free reactant gas is H2; and(iii) applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; andwherein (iv) steps (i) to (iii) are repeated to deposit a TiN film on the substrate, andsaid method further comprising:setting a target film stress for the TiN film, which is greater than a film stress of a reference TiN crystalline film being deposited by steps (i) to (iv) under deposition conditions including a reference flow rate of H2 used as the reactant gas in step (ii), and reference RF power used in step (iii); andsetting a flow rate of H2 used as the reactant gas in step (ii), and RF power used in step (iii), wherein only one or more of the flow rate of H2, and the RF power are used as control parameters for changing the film stress, and are different from the reference flow rate of H2 and the reference RF power, followed by conducting steps (i) to (iv) for depositing the TiN film. 2. The method according to claim 1, wherein the NH3-free reactant gas consists of H2 and a rare gas, thereby depositing a TiN crystalline film. 3. The method according to claim 1, wherein the TiN film has a film stress of −2,500 MPa to 800 MPa. 4. The method according to claim 1, wherein the TiN film has tensile film stress. 5. The method according to claim 4, wherein the set flow rate of H2 is lower than the reference flow rate of H2 used for the reference TiN crystalline film. 6. The method according to claim 4, wherein the set RF power is lower than the reference RF power used for the reference TiN crystalline film. 7. The method according to claim 4, wherein the Ti-containing film contains about 4% to about 9% carbon. 8. The method according to claim 4, wherein the Ti-containing film shows a peak at 2,000 cm−1 and substantially no peak at 1,400 cm−1 in a Fourier Transform Infrared Spectroscopy (FT-IR) graph.
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