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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0941216 (2013-07-12) |
등록번호 | US-9558931 (2017-01-31) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 14 인용 특허 : 632 |
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surfac
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.
1. A method of passivating a surface of a semiconductor, the method comprising the steps of: providing the surface of the semiconductor to a reaction chamber of a reactor;exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of H2S, NH4HS, and o
1. A method of passivating a surface of a semiconductor, the method comprising the steps of: providing the surface of the semiconductor to a reaction chamber of a reactor;exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of H2S, NH4HS, and organosulfur compounds in the reaction chamber; andpassivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface,wherein a pressure within the reaction chamber during the step of passivating is between 0.5 Torr and 750 Torr. 2. The method of passivating a surface of a semiconductor according to claim 1, wherein a source for the sulfur precursor is selected from the group consisting of organosulfur compounds. 3. The method of passivating a surface of a semiconductor according to claim 1, further comprising the step of depositing dielectric material onto the passivated semiconductor surface. 4. The method of passivating a surface of a semiconductor according to claim 3, wherein the step of depositing dielectric material and the step of exposing the surface of the semiconductor to a gas-phase sulfur-precursor are performed in the same reactor. 5. The method of passivating a surface of a semiconductor according to claim 3, wherein the step of depositing dielectric material and the step of exposing the surface of the semiconductor to a gas-phase precursor are performed in separate reactors. 6. The method of passivating a surface of a semiconductor according to claim 3, wherein the step of depositing dielectric material comprises depositing aluminum oxide. 7. The method of passivating a surface of a semiconductor according to claim 1, wherein the semiconductor is a high-mobility semiconductor selected from the group consisting of germanium and III-V semiconductor materials. 8. The method of passivating a surface of a semiconductor according to claim 1, further comprising the step of cleaning the surface of a semiconductor prior, using an in-situ gas-phase process, prior to the step of exposing the surface of the semiconductor to a gas-phase sulfur precursor. 9. The method of passivating a surface of a semiconductor according to claim 1, wherein the step of exposing the surface comprises exposing the surface of the semiconductor wafer to a plasma process. 10. The method of passivating a surface of a semiconductor according to claim 1, wherein the step of providing the surface of the semiconductor to a reaction chamber of a reactor comprises providing the surface within an atomic layer deposition reactor. 11. The method of passivating a surface of a semiconductor according to claim 1, further comprising the steps of providing a carrier gas and mixing the carrier gas with the gas-phase sulfur precursor. 12. A method of passivating a surface of a semiconductor, the method comprising the steps of: providing the surface of the semiconductor to a reaction chamber of a reactor;exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of NH4HS, H2S, and organosulfur compounds in the reaction chamber; andpassivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface. 13. A method of passivating a surface of a semiconductor, the method comprising the steps of: providing the surface of the semiconductor to a reaction chamber of a reactor;cleaning the surface of the semiconductor using an in-situ hydrogen gas-phase process,after the step of cleaning, exposing the surface of the semiconductor to a gas-phase sulfur precursor selected from the group consisting of NH4HS, H2S, and organosulfur compounds in the reaction chamber; andpassivating the surface of the semiconductor in the reaction chamber using the gas-phase sulfur precursor to form a passivated semiconductor surface. 14. The method of passivating a surface of a semiconductor according to claim 12, further comprising the step of cleaning the surface of the semiconductor using an in-situ gas-phase process using a cleaning source selected from the group consisting of hydrogen gas and hydrogen plasma prior to the step of exposing the surface of the semiconductor to a gas-phase sulfur precursor.
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