Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting device package
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/24
H01L-033/08
H01L-033/42
H01L-033/32
H01L-033/18
H01L-033/20
H01L-033/22
H01L-033/38
출원번호
US-0723869
(2015-05-28)
등록번호
US-9559260
(2017-01-31)
우선권정보
KR-10-2014-0091930 (2014-07-21)
발명자
/ 주소
Lee, Dong Kuk
Ko, Geun Woo
Yoo, Geon-Wook
Cha, Nam Goo
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Harness, Dickey & Pierce, PLC
인용정보
피인용 횟수 :
0인용 특허 :
40
초록▼
There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of loca
There is provided a semiconductor light emitting device 100 including a substructure 101, 120, 130 including at least one light emitting region R1 including a plurality of three-dimensional (3-D) light emitting nanostructures 140 and at least one electrode region R2, R3 including a plurality of locations CP2A, 17A, 17B, 18A, 18B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures 140 and the plurality of locations CP2A, 17A, 17B, 18A, 18B are identical.
대표청구항▼
1. A semiconductor light emitting device comprising: a substructure including at least one light emitting region including a plurality of three-dimensional (3-D) light emitting nanostructures and at least one electrode region including a plurality of locations wherein an arrangement of the plurality
1. A semiconductor light emitting device comprising: a substructure including at least one light emitting region including a plurality of three-dimensional (3-D) light emitting nanostructures and at least one electrode region including a plurality of locations wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructures and the plurality of locations are identical. 2. The semiconductor light emitting device of claim 1, wherein the plurality of locations are at least one of depressions, protrusions, and locations where other light emitting nanostructures were formed and removed. 3. The semiconductor light emitting device of claim 1, wherein the at least one electrode region includes a first conductivity-type semiconductor region and a second conductivity-type semiconductor region. 4. The semiconductor light emitting device of claim 1, wherein each three-dimensional (3-D) nanostructure includes a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor shell. 5. The semiconductor light emitting device of claim 1, the substructure further including a substrate, a base layer on the substrate, and a mask layer on the base layer. 6. The semiconductor light emitting device of claim 5, further comprising: a first conductivity-type electrode on the base layer and a second conductivity-type electrode on the mask layer. 7. The semiconductor light emitting device of claim 1, further comprising: a transparent electrode layer covering the plurality of three-dimensional (3-D) light emitting nanostructures. 8. The semiconductor light emitting device of claim 7, further comprising: a filler layer on the transparent electrode layer and the plurality of three-dimensional (3-D) light emitting nanostructures. 9. The semiconductor light emitting device of claim 8, wherein, the substructure further includes a substrate, a base layer on the substrate, and a mask layer on the base layer, andthe semiconductor light emitting device further includes, a first conductivity-type electrode on the base layer and a second conductivity-type electrode on the mask layer, andan electrode insulating layer between the mask layer and the second conductivity-type electrode. 10. The semiconductor light emitting device of claim 1, wherein the plurality of three-dimensional (3-D) light emitting nanostructures are arranged in a hexagonal pattern of equal pitch. 11. The semiconductor light emitting device of claim 4, wherein the first conductivity-type semiconductor core is made of an n-type gallium nitride (n-GaN) doped with silicon (Si) or carbon (C), the active layer includes indium gallium nitride (InGaN), and the second conductivity-type semiconductor shell is made of a p-type gallium nitride (p-GaN) doped with magnesium (Mg) or zinc (Zn). 12. The semiconductor light emitting device of claim 1, wherein, the at least one light emitting region includes three light emitting regions and the plurality of 3-D light emitting nanostructures includes three sets of 3-D light emitting nanostructures,each light emitting region of the three light emitting regions includes a separate set of the three sets of 3-D light emitting nanostructures, andthe separate sets of 3-D light emitting nanostructures have different pitches, respectively, such that one set of 3-D light emitting nanostructures have greater pitches than a remainder two sets of 3-D light emitting nanostructures. 13. The semiconductor light emitting device of claim 12, wherein the one set of three-dimensional (3-D) light emitting nanostructures with greater pitches further have at least one of greater growth thickness, greater Indium (In) content and greater wavelength than the remainder two sets of 3-D light emitting nanostructures. 14. The semiconductor light emitting device of claim 1, wherein, each 3-D light emitting nanostructure includes an individual center,a distance between respective centers of adjacent 3-D light emitting nanostructures is a first pitch,at least one 3-D light emitting nanostructure of the plurality of 3-D light emitting nanostructures is adjacent to the plurality of locations,a distance between a center of the at least one 3-D light emitting nanostructure and an adjacent location of the plurality of locations is a second pitch,a distance between respective centers of adjacent locations of the plurality of locations is a third pitch, andthe first pitch, the second pitch, and the third pitch are all substantially equal. 15. The semiconductor light emitting device of claim 1, wherein a cross-sectional area of each of the plurality of locations is greater than a cross-section of each of the plurality of three-dimensional (3-D) light emitting nanostructures. 16. The semiconductor light emitting device of claim 4, wherein each three-dimensional (3-D) nanostructure further includes a highly resistive layer on a portion of the first conductivity-type semiconductor core. 17. A semiconductor light emitting device comprising: a substrate including at least one light emitting region, a first electrode region, and a second electrode region;a base layer on the substrate;a mask layer on the base layer;a plurality of three-dimensional (3-D) light emitting nanostructures in a plurality of openings in the mask layer on the at least one light emitting region;a first electrode on the first electrode region; anda second electrode on the second electrode region;wherein each of the first electrode on the first electrode region, the second electrode on the second region, the mask layer on the first and second electrode regions, and the base layer on the first and second electrode regions includes a separate plurality of locations, each plurality of locations having a common pattern with a pattern of the plurality of three-dimensional (3-D) light emitting nanostructures in the at least one light emitting region. 18. The semiconductor light emitting device of claim 17, further comprising: a transparent electrode layer covering the plurality of three-dimensional (3-D) light emitting nanostructures;a filler layer on the transparent electrode layer and the plurality of three-dimensional (3-D) light emitting nanostructures; andan electrode insulating layer between the mask layer and the second electrode. 19. The semiconductor light emitting device of claim 17, wherein each of the plurality of three-dimensional (3-D) nanostructures includes a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor shell. 20. The semiconductor light emitting device of claim 19, wherein the first conductivity-type semiconductor core is made of an n-type gallium nitride (n-GaN) doped with silicon (Si) or carbon (C), the active layer includes indium gallium nitride (InGaN), and the second conductivity-type semiconductor shell is made of a p-type gallium nitride (p-GaN) doped with magnesium (Mg) or zinc (Zn).
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