A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
대표청구항▼
1. A method for manufacturing a display device, the method comprising the steps of: forming a first organic resin layer over a first substrate;forming a first insulating film over the first organic resin layer;forming a transistor comprising a channel formation region over the first insulating film,
1. A method for manufacturing a display device, the method comprising the steps of: forming a first organic resin layer over a first substrate;forming a first insulating film over the first organic resin layer;forming a transistor comprising a channel formation region over the first insulating film, the channel formation region comprising an oxide semiconductor material;forming a second insulating film over the transistor;forming a light emitting element over the second insulating film, the light emitting element being electrically connected to the transistor;disposing a second substrate over the light emitting element, the second substrate being provided with a second organic resin layer so that the second organic resin layer is disposed between the light emitting element and the second substrate;irradiating the first organic resin layer with a first laser through the first substrate;separating the first substrate from the first organic resin layer after the irradiation with the first laser;bonding a first flexible substrate and the first organic resin layer after separating the first substrate from the first organic resin layer;irradiating the second organic resin layer with a second laser through the second substrate;separating the second substrate from the second organic resin layer after the irradiation with the second laser; andbonding a second flexible substrate and the second organic resin layer after separating the second substrate from the second organic resin layer. 2. The method for manufacturing a display device according to claim 1, wherein each of the first organic resin layer and the second organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyimide resin, and a polyamide-imide resin. 3. The method for manufacturing a display device according to claim 1, wherein each of the first organic resin layer and the second organic resin layer is formed by using any one of a spin coating method, a dip coating method, and a doctor blade method. 4. The method for manufacturing a display device according to claim 1, wherein each of the first laser and the second laser is emitted from an excimer laser device. 5. The method for manufacturing a display device according to claim 1, wherein the first substrate is moved in one direction while irradiating the first organic resin layer with the first laser. 6. The method for manufacturing a display device according to claim 1, wherein the oxide semiconductor material comprises indium and zinc. 7. The method for manufacturing a display device according to claim 1, wherein the channel formation region comprises a crystalline region. 8. The method for manufacturing a display device according to claim 1, wherein the step of bonding the first flexible substrate and the first organic resin layer is performed by using a bonding layer, andwherein the bonding layer comprises any one of an epoxy resin, an acrylic resin, a silicone resin, and a phenol resin. 9. The method for manufacturing a display device according to claim 1, wherein the light emitting element is an organic EL element. 10. A method for manufacturing a display device, the method comprising the steps of: forming a first organic resin layer over a first substrate;forming a first insulating film over the first organic resin layer;forming a transistor comprising a channel formation region over the first insulating film, the channel formation region comprising an oxide semiconductor material;forming a second insulating film over the transistor;forming a light emitting element over the second insulating film, the light emitting element being electrically connected to the transistor;disposing a second substrate over the light emitting element, the second substrate being provided with a second organic resin layer so that the second organic resin layer is disposed between the light emitting element and the second substrate;irradiating the first organic resin layer with a first ultraviolet light through the first substrate;separating the first substrate from the first organic resin layer after the irradiation with the first ultraviolet light;bonding a first flexible substrate and the first organic resin layer after separating the first substrate from the first organic resin layer;irradiating the second organic resin layer with a second ultraviolet light through the second substrate;separating the second substrate from the second organic resin layer after the irradiation with the second ultraviolet light; andbonding a second flexible substrate and the second organic resin layer after separating the second substrate from the second organic resin layer,wherein each of the first organic resin layer and the second organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin, andwherein a thickness of each of the first organic resin layer and the second organic resin layer is less than or equal to 20 μm. 11. The method for manufacturing a display device according to claim 10, wherein each of the first organic resin layer and the second organic resin layer is formed by using any one of a spin coating method, a dip coating method, and a doctor blade method. 12. The method for manufacturing a display device according to claim 10, wherein each of the first ultraviolet light and the second ultraviolet light is emitted from an excimer laser device. 13. The method for manufacturing a display device according to claim 10, wherein the first substrate is moved in one direction while irradiating the first organic resin layer with the first ultraviolet light. 14. The method for manufacturing a display device according to claim 10, wherein the oxide semiconductor material comprises indium and zinc. 15. The method for manufacturing a display device according to claim 10, wherein the channel formation region comprises a crystalline region. 16. The method for manufacturing a display device according to claim 10, wherein the step of bonding the first flexible substrate and the first organic resin layer is performed by using a bonding layer, andwherein the bonding layer comprises any one of an epoxy resin, an acrylic resin, a silicone resin, and a phenol resin. 17. The method for manufacturing a display device according to claim 10, wherein the light emitting element is an organic EL element. 18. A method for manufacturing a display device, the method comprising the steps of: forming an organic resin layer over a substrate;forming an insulating film over the organic resin layer;forming a transistor comprising a channel formation region over the insulating film, the channel formation region comprising an oxide semiconductor layer over the insulating film; andreducing adhesion between the organic resin layer and the substrate by irradiating the organic resin layer with a linear beam through the substrate,wherein a thickness of the organic resin layer is less than or equal to 20 μm. 19. The method for manufacturing a display device according to claim 18, wherein the substrate is separated from the organic resin layer by reducing adhesion between the organic resin layer and the substrate. 20. The method for manufacturing a display device according to claim 18, wherein the organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin. 21. The method for manufacturing a display device according to claim 18, wherein the oxide semiconductor layer comprises indium and zinc. 22. The method for manufacturing a display device according to claim 18, wherein the linear beam is emitted from an excimer laser device. 23. The method for manufacturing a display device according to claim 18, wherein the substrate is moved in one direction while irradiating the organic resin layer with the linear beam. 24. The method for manufacturing a display device according to claim 18, further comprising a light emitting element over the oxide semiconductor layer, wherein the light emitting element is an organic EL element. 25. A method for manufacturing a display device, the method comprising the steps of: forming an organic resin layer over a substrate;forming an insulating film over the organic resin layer;forming an element layer over the insulating film;extending a laser light by an optical system;condensing the laser light to form a linear beam;irradiating an interface as a processing region with the linear beam through the substrate, the interface being between the organic resin layer and the substrate;moving the substrate relative to the linear beam during irradiation with the linear beam; andseparating the substrate from the organic resin layer. 26. The method for manufacturing a display device according to claim 25, wherein the organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin. 27. The method for manufacturing a display device according to claim 25, wherein a thickness of the organic resin layer is less than or equal to 20 μm. 28. The method for manufacturing a display device according to claim 25, wherein the insulating film is a single layer or a stacked layer comprising at least one of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film. 29. The method for manufacturing a display device according to claim 25, wherein the laser light is emitted from an excimer laser device. 30. The method for manufacturing a display device according to claim 25, wherein the substrate is moved in one direction while irradiating the organic resin layer with the linear beam. 31. The method for manufacturing a display device according to claim 25, further comprising a light emitting element over the organic resin layer, wherein the light emitting element is an organic EL element. 32. The method for manufacturing a display device according to claim 25, wherein the substrate is a glass substrate. 33. A method for manufacturing a display device, the method comprising the steps of: forming an organic resin layer over a substrate;forming an insulating film over the organic resin layer;forming an element layer over the insulating film;extending a laser light by an optical system;condensing the laser light to form a linear beam;irradiating a processing region including an interface between the organic resin layer and the substrate with the linear beam through the substrate;moving the substrate relative to the linear beam during irradiation with the linear beam; andseparating the substrate from the organic resin layer at the interface between the organic resin layer and the substrate and/or a vicinity of the interface. 34. The method for manufacturing a display device according to claim 33, wherein the organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin. 35. The method for manufacturing a display device according to claim 33, wherein a thickness of the organic resin layer is less than or equal to 20 μm. 36. The method for manufacturing a display device according to claim 33, wherein the insulating film is a single layer or a stacked layer comprising at least one of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film. 37. The method for manufacturing a display device according to claim 33, wherein the laser light is emitted from an excimer laser device. 38. The method for manufacturing a display device according to claim 33, wherein the substrate is moved in one direction while irradiating the organic resin layer with the linear beam. 39. The method for manufacturing a display device according to claim 33, further comprising a light emitting element over the organic resin layer, wherein the light emitting element is an organic EL element. 40. The method for manufacturing a display device according to claim 33, wherein the substrate is a glass substrate. 41. A method for manufacturing a display device, the method comprising the steps of: forming an organic resin layer over a substrate;forming an insulating film over the organic resin layer;forming an element layer over the insulating film;extending a laser light by an optical system;condensing the laser light to form a linear beam;irradiating an interface as a processing region with the linear beam through the substrate, the interface being between the organic resin layer and the substrate;moving the substrate relative to the linear beam during irradiation with the linear beam; andseparating the substrate from the organic resin layer so that a portion of the organic resin layer remains on the substrate. 42. The method for manufacturing a display device according to claim 41, wherein the organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin. 43. The method for manufacturing a display device according to claim 41, wherein a thickness of the organic resin layer is less than or equal to 20 μm. 44. The method for manufacturing a display device according to claim 41, wherein the insulating film is a single layer or a stacked layer comprising at least one of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film. 45. The method for manufacturing a display device according to claim 41, wherein the laser light is emitted from an excimer laser device. 46. The method for manufacturing a display device according to claim 41, wherein the substrate is moved in one direction while irradiating the organic resin layer with the linear beam. 47. The method for manufacturing a display device according to claim 41, further comprising a light emitting element over the organic resin layer, wherein the light emitting element is an organic EL element. 48. The method for manufacturing a display device according to claim 41, wherein the substrate is a glass substrate. 49. A method for manufacturing a display device, the method comprising the steps of: forming an organic resin layer over a substrate;forming an insulating film over the organic resin layer;forming an element layer over the insulating film;condensing a laser light to form a linear beam;irradiating a processing region including an interface between the organic resin layer and the substrate with the linear beam through the substrate;moving the substrate relative to the linear beam during irradiation with the linear beam; andseparating the substrate from the organic resin layer,wherein the element layer comprises an oxide semiconductor layer comprising a channel formation region, andwherein the channel formation region comprises an oxide semiconductor material. 50. The method for manufacturing a display device according to claim 49, wherein the organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin. 51. The method for manufacturing a display device according to claim 49, wherein a thickness of the organic resin layer is less than or equal to 20 μm. 52. The method for manufacturing a display device according to claim 49, wherein the insulating film is a single layer or a stacked layer comprising at least one of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film. 53. The method for manufacturing a display device according to claim 49, wherein the laser light is emitted from an excimer laser device. 54. The method for manufacturing a display device according to claim 49, wherein the substrate is moved in one direction while irradiating the organic resin layer with the linear beam. 55. The method for manufacturing a display device according to claim 49, further comprising a light emitting element over the organic resin layer, wherein the light emitting element is an organic EL element. 56. The method for manufacturing a display device according to claim 49, wherein the substrate is a glass substrate.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Shimoda,Tatsuya; Inoue,Satoshi; Miyazawa,Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Watanabe, Ryosuke; Takahashi, Hidekazu; Tsurume, Takuya; Arai, Yasuyuki; Watanabe, Yasuko; Higuchi, Miyuki, Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip.
Hosono,Hideo; Hirano,Masahiro; Ota,Hiromichi; Orita,Masahiro; Hiramatsu,Hidenori; Ueda,Kazushige, LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film.
Cho, Yoon-dong; Park, Jong-Hyun; Yoon, Soo-Young; Lee, Mi-Jung; Choi, Jae-kyung, Method of fabricating thin film transistor substrate and organic light emitting display device using the same.
Park, Yong-Hwan; Lee, Jae-Seob; Kim, Moo-Jin; Pyo, Young-Shin; Seo, Sang-Joon; Min, Hoon-Kee; Jin, Dong-Un, Method of manufacturing flexible display device.
Kim Dong-Gyu,KRX ; Lee Won-Hee,KRX, Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure.
Levy,David H.; Scuderi,Andrea C.; Irving,Lyn M., Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby.
Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio, Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.
Umeda, Kenichi; Hirai, Hiroyuki; Tanaka, Atsushi; Kohda, Katsuhiro; Higashi, Kohei; Sunagawa, Hiroshi, Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film.
Takayama, Toru; Maruyama, Junya; Mizukami, Mayumi; Yamazaki, Shunpei, Semiconductor device and peeling off method and method of manufacturing semiconductor device.
Takayama, Toru; Maruyama, Junya; Mizukami, Mayumi; Yamazaki, Shunpei, Semiconductor device and peeling off method and method of manufacturing semiconductor device.
Cillessen Johannes F. M.,NLX ; Blom Paulus W. M.,NLX ; Wolf Ronald M. ; Giesbers Jacobus B.,NLX, Semiconductor device having a transparent switching element.
Ito,Yoshihiro; Kadota,Michio, Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Inoue, Satoshi; Shimoda, Tatsuya; Miyazawa, Wakao, Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus.
Ishii,Hiromitsu; Hokari,Hitoshi; Yoshida,Motohiko; Yamaguchi,Ikuhiro, Thin film transistor having an etching protection film and manufacturing method thereof.
Takayama,Toru; Maruyama,Junya; Goto,Yuugo; Kuwabara,Hideaki; Yamazaki,Shunpei, Vehicle, display device and manufacturing method for a semiconductor device.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.