Rectifier circuit with reduced reverse recovery time
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H02M-007/217
H02M-007/06
H02M-001/00
출원번호
US-0658308
(2015-03-16)
등록번호
US-9559608
(2017-01-31)
발명자
/ 주소
Glenn, Jack L.
출원인 / 주소
Delphi Technologies, Inc.
대리인 / 주소
Hazelton, Lawrence D.
인용정보
피인용 횟수 :
1인용 특허 :
3
초록▼
A rectifier circuit includes a MOSFET (M1), and a first Zener diode (D1) or a first Zener-emulator (E1) that emulates the D1. The circuit conducts current in a forward direction from an input to an output, and substantially blocks current in a reverse direction. The M1 is characterized by an on-resi
A rectifier circuit includes a MOSFET (M1), and a first Zener diode (D1) or a first Zener-emulator (E1) that emulates the D1. The circuit conducts current in a forward direction from an input to an output, and substantially blocks current in a reverse direction. The M1 is characterized by an on-resistance. A cathode of the D1 or a cathode-contact of the E1 is connected to the input, and the anode of the D1 or an anode-contact of the E1 are connected to the source. The E1 includes a first small-Zener-diode (D11), a first resistor (R11) and a first transistor (M11) interconnected such that the E1 emulates the D1, and is characterized by a Zener-voltage. The Zener-voltage and the on-resistance are selected such that a stored-charge in the body-diode is less than a forward-charge-threshold when current flows in the forward direction, whereby the reverse recover time of the body-diode is reduced.
대표청구항▼
1. A rectifier circuit configured to conduct current in a forward direction from an input to an output of the circuit, and substantially block current in a reverse direction from the output to the input, said circuit comprising: a metal-oxide-semiconductor-field-effect-transistor (mosfet) that defin
1. A rectifier circuit configured to conduct current in a forward direction from an input to an output of the circuit, and substantially block current in a reverse direction from the output to the input, said circuit comprising: a metal-oxide-semiconductor-field-effect-transistor (mosfet) that defines a gate, a drain, a source, and a body-diode oriented to allow current to flow to the drain from the source of the mosfet, wherein the gate is connected to the input, the drain is connected to the output, and the mosfet is characterized by an on-resistance; anda first Zener-diode that defines an anode and a cathode of the first Zener-diode, wherein the cathode is connected to the input, the anode is connected to the source, and the first Zener-diode is characterized by a Zener-voltage, wherein the Zener-voltage and the on-resistance are selected such that a stored-charge in the body-diode is less than a forward-charge-threshold when current flows in the forward direction, whereby the reverse recover time of the body-diode is reduced. 2. The circuit in accordance with claim 1, wherein the circuit includes a capacitor that defines a first terminal and a second terminal, wherein the first terminal is connected to the input and the second terminal is connected to a reference-voltage. 3. The circuit in accordance with claim 1, wherein the circuit includes a second Zener-diode connected in parallel with the body-diode and with the same polarization as the body-diode. 4. A rectifier circuit configured to conduct current in a forward direction from an input to an output of the circuit, and substantially block current in reverse direction from the output to the input, said circuit comprising: a metal-oxide-semiconductor-field-effect-transistor (mosfet) that defines a gate, a drain, a source, and a body-diode oriented to allow current to flow to the drain from the source of the mosfet, wherein the gate is connected to the input, the drain is connected to the output, and the mosfet is characterized by an on-resistance; anda first Zener-emulator that defines an anode-contact and a cathode-contact of the first Zener-emulator, wherein the cathode-contact is connected to the input, the anode-contact is connected to the source, the first Zener-emulator includes a first small-Zener-diode, a first resistor and a first transistor interconnected such that the first Zener-emulator emulates a Zener-diode that is characterized by a Zener-voltage, and the Zener-voltage and the on-resistance are selected such that a stored-charge in the body-diode is less than a forward-charge-threshold when current flows in the forward direction, whereby the reverse recover time of the body-diode is reduced. 5. The circuit in accordance with claim 4, wherein the circuit includes a capacitor that defines a first terminal and a second terminal, wherein the first terminal is connected to the input and the second terminal is connected to a reference-voltage. 6. The circuit in accordance with claim 4, wherein the circuit includes a second Zener-emulator connected in parallel with the body-diode, and the second Zener-emulator includes a second small-Zener-diode, a second resistor and a second transistor interconnected such that the second Zener-emulator emulates a Zener-diode connected to the body-diode with the same polarization as the body-diode.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (3)
John Saxelby ; Jay Prager ; Patrizio Vinciarelli ; Estia Eichten, Active rectifier.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.