Removal of an accumulated frozen substance from a cooling unit
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
F25D-021/00
G01B-007/06
F25D-021/02
출원번호
US-0897487
(2010-10-04)
등록번호
US-9562757
(2017-02-07)
발명자
/ 주소
Ghan, Michael A.
Conant, James R.
출원인 / 주소
The Controls Group, Inc.
대리인 / 주소
Fogg & Powers LLC
인용정보
피인용 횟수 :
0인용 특허 :
18
초록▼
A probe includes a sensor and a support. The sensor is operable to provide an indication of a thickness of a frozen substance that has accumulated between the sensor and a cooling fin of a cooling unit, and the support is operable to hold the sensor spaced apart from the cooling fin. When a defrost
A probe includes a sensor and a support. The sensor is operable to provide an indication of a thickness of a frozen substance that has accumulated between the sensor and a cooling fin of a cooling unit, and the support is operable to hold the sensor spaced apart from the cooling fin. When a defrost controller uses such a probe to monitor an amount of frost build up on the fin or fins of a cooling unit (e.g., a refrigeration unit or freezer unit), the defrost controller can initiate a defrost cycle only when warranted, e.g., only when the thickness of the built-up frost equals or exceeds a threshold thickness.
대표청구항▼
1. A detection unit, comprising: a probe including a frozen-substance sensor configured to provide an indication of a thickness of a frozen substance formed between the sensor and a first cooling fin of a cooling unit; anda processor configured to generate an indication that the cooling unit is read
1. A detection unit, comprising: a probe including a frozen-substance sensor configured to provide an indication of a thickness of a frozen substance formed between the sensor and a first cooling fin of a cooling unit; anda processor configured to generate an indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness;wherein the probe is configured to generate a signal as the indication of the thickness of the frozen substance, the signal corresponding to a value of capacitance between the sensor and the fin; andwherein the processor is configured: to generate an indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the signal corresponding to a capacitance value that has a predetermined relationship to a capacitance threshold value that corresponds to the threshold thickness;to determine a first post-defrost capacitance value corresponding to the signal;to adjust the capacitance threshold value in response to the first post-defrost capacitance value;to determine a second post-defrost capacitance value in response to the signal after determining the first post-defrost capacitance value; andto adjust the capacitance threshold value in response to the second post-defrost capacitance value if the second post-defrost capacitance value is less than the first post-defrost capacitance value. 2. The detection unit of claim 1 wherein the sensor is further configured to provide an indication of a thickness of a frozen substance formed between the sensor and a second cooling fin of the cooling unit. 3. The detection unit of claim 1 wherein the probe further includes a support configurable to hold the sensor spaced apart from the cooling fin. 4. The detection unit of claim 1, further comprising a cable configured to couple the probe to the processor. 5. The detection unit of claim 1 wherein the processor is configured to receive the signal. 6. The detection unit of claim 1, further comprising: wherein the probe includes a wireless transmitter configured to transmit the signal; anda wireless receiver configured to receive the transmitted signal and to provide the received signal to the processor. 7. The detection unit of claim 1, further comprising: a capacitance determiner that is configured to receive the signal and to approximately determine the value of the capacitance from the signal; andwherein the processor is configured to compare the determined capacitance value to the capacitance threshold value that corresponds to the threshold thickness, and to generate a signal indicating that the cooling unit is ready for removal of at least part of the frozen substance in response to the determined capacitance value exceeding the capacitance threshold value. 8. The detection unit of claim 1 wherein: the probe comprises a capacitance determiner that is configured to receive the signal and to approximately determine the value of the capacitance from the signal; andthe processor is configured to receive the determined capacitance value from the probe, to compare the determined capacitance value to the capacitance threshold value that corresponds to the threshold thickness, and to generate a signal indicating that the cooling unit is ready for removal of at least part of the frozen substance in response to the determined capacitance value exceeding the capacitance threshold value. 9. The detection unit of claim 1 wherein the processor is configured: to receive a calibration signal; andto set a threshold signal value substantially equal to a value that the signal has at substantially a time that the calibration signal is received, the threshold signal value corresponding to the threshold thickness. 10. The detection unit of claim 1 wherein the processor is configured: to determine a first value of the signal before the sensor is located adjacent to the fin;to determine a second value of the signal after the sensor is located adjacent to the fin; andto determine from the first and second values a third value corresponding the threshold thickness. 11. The detection unit of claim 1, further comprising: a capacitance determiner configured to determine a first capacitance value from the signal before the frost sensor is located adjacent to the fin; andto determine a second capacitance value from the signal after the frost sensor is located adjacent to the fin; andwherein the processor is configured to generate a third capacitance value substantially equal to a difference between the first and second capacitance values; andto calculate a fourth capacitance value that corresponds to the threshold thickness, the fourth capacitance value substantially equal to a product including the third capacitance value, the threshold thickness, and a dielectric constant of the frozen substance. 12. The detection unit of claim 11 wherein the processor is configured to generate an indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the signal corresponding to a capacitance value that has a predetermined relationship to the fourth capacitance value. 13. The detection unit of claim 1, further comprising: a capacitance determiner configured to determine a first capacitance value from the signal before the sensor is located adjacent to the fin; andto determine a second capacitance value from the signal after the sensor is located adjacent to the fin; andwherein the processor is configured: to generate a third capacitance value substantially equal to a difference between the first and second capacitance values; andto calculate a fourth capacitance value that corresponds to the threshold thickness, the fourth capacitance value substantially equal to a product including the third capacitance value, the threshold thickness, a density of the frozen substance, and a dielectric constant of the frozen substance. 14. The detection unit of claim 1 wherein the processor is configured to generate a frozen-substance-removal signal as the indication that the cooling unit is ready for the at least partial removal of the frozen substance. 15. The detection unit of claim 1 wherein: the probe includes a temperature sensor; andthe processor is configured to generate an indication that the cooling unit is ready to end a frozen-substance-removal cycle in response to the temperature sensor indicating a temperature that has a predetermined relationship to a temperature threshold. 16. A frozen-substance-removal controller, comprising: a detection unit including: a probe including a frozen-substance sensor configured to provide an indication of a thickness of a frozen substance formed between the sensor and a first cooling fin of a cooling unit; anda processor configured to generate a first indication that the fluid-cooling unit is ready for removal of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness;wherein the probe is configured to generate a signal as the indication of the thickness of the frozen substance, the signal corresponding to a value of capacitance between the sensor and the fin; andwherein the processor is configured: to generate an indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the signal corresponding to a capacitance value that has a predetermined relationship to a capacitance threshold value that corresponds to the threshold thickness;to determine a first post-defrost capacitance value corresponding to the signal;to adjust the capacitance threshold value in response to the first post-defrost capacitance value;to determine a second post-defrost capacitance value in response to the signal after determining the first post-defrost capacitance value; andto adjust the capacitance threshold value in response to the second post-defrost capacitance value if the second post-defrost capacitance value is less than the first post-defrost capacitance value; anda controller configured to cause the cooling unit to initiate a frozen-substance-removal cycle in response to the indication from the processor. 17. The frozen-substance-removal unit of claim 16 wherein the controller is configured to cause the cooling unit to perform a sequence of actions that constitutes at least part of the frozen-substance-removal cycle. 18. The frozen-substance-removal unit of claim 16 wherein the controller is configured to route a fluid having a temperature above the freezing temperature of the frozen substance through a tube of the cooling unit during the frozen-substance-removal cycle. 19. The frozen-substance-removal unit of claim 16 wherein the controller is configured to route a fluid having a temperature above the freezing temperature of the frozen substance through a tube of the cooling unit during the frozen-substance-removal cycle, the tube being adjacent to the fin. 20. The frozen-substance-removal unit of claim 16 wherein the controller is configured to cause a heater element to have a temperature above the freezing temperature of the frozen substance during the frozen-substance-removal cycle. 21. The frozen-substance-removal unit of claim 16 wherein the controller is configured to cause a heater element to have a temperature above the freezing temperature of the frozen substance during the frozen-substance-removal cycle, the heater element being adjacent to the fin. 22. The frozen-substance-removal unit of claim 16 wherein: the probe includes a temperature sensor;the processor is configured to generate a second indication that the cooling unit is ready to end the frozen-substance-removal cycle in response to the temperature sensor indicating a temperature that has a predetermined relationship to a temperature threshold; andthe controller is configured to cause the cooling unit to halt the frozen-substance-removal cycle in response to the second indication from the processor. 23. A cooling system, comprising: a first cooling unit having at least one first cooling fin on which may form a frozen substance having a thickness;a first probe including a frozen-substance sensor disposed adjacent to one of the at least one first cooling fin and configured to provide an indication of the thickness of the frozen substance by indicating a capacitance that is dependent on the thickness of the frozen substance formed between the sensor and the one of the at least one first cooling;a first processing circuit configured to generate a first indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness;wherein the first probe is configured to generate a signal as the indication of the thickness of the frozen substance, the signal corresponding to a value of the capacitance; andwherein first the processing circuit is further configured: to generate the first indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the signal corresponding to a capacitance value that is greater than a capacitance threshold value that corresponds to the threshold thickness;to determine a first post-defrost capacitance value corresponding to the signal;to adjust the capacitance threshold value in response to the first post-defrost capacitance value;to determine a second post-defrost capacitance value in response to the signal after determining the first post-defrost capacitance value; andto adjust the capacitance threshold value in response to the second post-defrost capacitance value if the second post-defrost capacitance value is less than the first post-defrost capacitance value; anda first controller configured to cause the first cooling unit to initiate a frozen-substance-removal cycle in response to the first indication from the processing circuit. 24. The cooling system of claim 23 wherein the cooling unit comprises a gas-cooling unit. 25. The cooling system of claim 23 wherein the cooling unit comprises an air-cooling unit. 26. The cooling system of claim 23 wherein the cooling unit comprises a freezer unit. 27. The cooling system of claim 23 wherein the cooling unit comprises a refrigeration unit. 28. The cooling system of claim 23, further comprising: a second cooling unit having at least one second cooling fin on which may form a frozen substance having a thickness;a second probe including a frozen-substance sensor disposed adjacent to one of the at least one second fin and configured to provide an indication of the thickness of the frozen substance formed on the one of the at least one second fin;a second processing circuit configured to generate a second indication that the second cooling unit is ready for removal of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness; anda second controller configured to cause the second cooling unit to initiate a frozen-substance-removal cycle in response to the second indication from the second processing circuit. 29. The cooling system of claim 23, further comprising: a second cooling unit having at least one second cooling fin on which may form a frozen substance having a thickness;a second probe including a frozen-substance sensor disposed adjacent to one of the at least one second fin and configured to provide an indication of the thickness of the frozen substance formed on the one of the at least one second fin;a second processing circuit configured to generate a second indication that the second cooling unit is ready for removal of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness;a second controller configured to cause the second cooling unit to initiate a frozen-substance-removal cycle in response to the second indication from the second processing circuit; anda master controller configured to coordinate occurrences of the frozen-substance-removal cycles of the first and second cooling units. 30. The cooling system of claim 23, further comprising: a second cooling unit having at least one second cooling fin on which may form a frozen substance having a thickness;a second probe including a frozen-substance sensor disposed adjacent to one of the at least one second fin and configured to provide an indication of the thickness of the frozen substance formed on the one of the at least one second fin;a second processing circuit configured to generate a second indication that the second cooling unit is ready for removal of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness;a second controller configured to cause the second cooling unit to initiate a frozen-substance-removal cycle in response to the indication from the second processing circuit; anda master controller configured to prohibit an occurrence of the frozen-substance-removal cycle of the first cooling unit from overlapping an occurrence of the frozen-substance-removal cycle of the second cooling unit. 31. A facility, comprising: a space; anda cooling system configured to cool the space, the cooling system comprising:a first cooling unit having at least one first cooling fin on which may form a frozen substance having a thickness;a first probe including a frozen-substance sensor disposed adjacent to the fin and configured to provide an indication of the thickness of the frozen substance by forming a capacitance with one or more of the at least one first cooling fin;wherein the first probe is configured to generate a signal as the indication of the thickness of the frozen substance, the signal corresponding to the value of the capacitance;a first processing circuit configured to generate a first indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the signal corresponding to a capacitance value that has a predetermined relationship to a capacitance threshold value that corresponds to the thickness of the frozen substance being greater than a threshold thickness;wherein the first processing circuit is further configured:to generate the first indication that the cooling unit is ready for removal of at least part of the frozen substance in response to the signal corresponding to a capacitance value that is greater than a capacitance threshold value that corresponds to the threshold thickness;to determine a first post-defrost capacitance value corresponding to the signal;to adjust the capacitance threshold value in response to the first post-defrost capacitance value;to determine a second post-defrost capacitance value in response to the signal after determining the first post-defrost capacitance value; andto adjust the capacitance threshold value in response to the second post-defrost capacitance value if the second post-defrost capacitance value is less than the first post-defrost capacitance value; anda first controller configured to cause the first cooling unit to initiate a frozen-substance-removal cycle in response to the first indication from the processing circuit. 32. A method, comprising: receiving an indication of a thickness of a frozen substance formed over a first cooling fin of a cooling unit in response to a sensed capacitance formed by an electrode and the first cooling fin;indicating that the cooling unit is ready for melting of at least part of the frozen substance in response to the thickness of the frozen substance being greater than a threshold thickness;wherein receiving the indication comprises receiving a signal that indicates a value of capacitance for a capacitor formed between the first cooling fin and the electrode;wherein indicating comprises indicating that the cooling unit is ready for melting of at least part of the frozen substance in response to the signal corresponding to a capacitance value having a predetermined relationship to a threshold capacitance value that corresponds to the thickness threshold;determining a first post-melting capacitance value corresponding to the signal;adjusting the capacitance threshold value in response to the first post-melting capacitance value;determining a second post-melting capacitance value in response to the signal after determining the first post-melting capacitance value; andadjusting the threshold capacitance value in response to the second post-defrost capacitance value if the second post-melting capacitance value is less than the first post-melting capacitance value. 33. The method of claim 32, further comprising indicating that the cooling unit is ready to end the melting of the frozen substance in response to a temperature near the fin having a predetermined relationship to a temperature threshold. 34. A method, comprising: receiving a signal representing a first capacitance value from a sensor while the sensor is remote from a fin of a cooling unit, the first capacitance value corresponding to a capacitance offset;receiving the signal representing a second capacitance value from the sensor while the sensor is adjacent to the fin and while the fin is approximately free of the frozen substance, the second capacitance value corresponding to a no-frozen-substance-accumulation capacitance value; anddetermining from the first and second capacitance values a third capacitance value corresponding a threshold thickness of a frozen substance that may form over the fin. 35. The method of claim 34 wherein receiving the signal representing the second capacitance value comprises receiving the signal representing the second capacitance value while there is none of the frozen substance formed over the fin. 36. A method, comprising: receiving a first capacitance value associated with a sensor while the sensor is remote from a fin of a cooling unit;receiving a second capacitance value associated with the sensor while the sensor is adjacent to the fin;generating a third capacitance value substantially equal to a difference between the first and second capacitance values;calculating a fourth capacitance value that corresponds to a threshold thickness of a frozen substance that may form over the fin, the fourth capacitance value being a function of the third capacitance value, the threshold thickness, and a dielectric constant of the frozen substance;receiving a fifth capacitance value associated with the sensor after calculating the fourth capacitance value and while the sensor is adjacent to the fin; andcausing the cooling unit to execute a defrost cycle in response to the fifth capacitance value equaling or exceeding the fourth capacitance value. 37. The method of claim 36 wherein calculating the fourth capacitance comprises calculating the fourth capacitance value as a function of the third capacitance value, the threshold thickness, a dielectric constant of the frozen substance, and a density of the frozen substance.
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