Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G11C-011/00
H01L-027/146
H01L-031/0352
H01L-031/0224
H01L-031/0216
H01L-031/0392
B82Y-020/00
B82Y-040/00
출원번호
US-0187275
(2016-06-20)
등록번호
US-9570502
(2017-02-14)
발명자
/ 주소
Sargent, Edward Hartley
Clifford, Jason Paul
Konstantatos, Gerasimos
Howard, Ian
Klem, Ethan J. D.
Levina, Larissa
출원인 / 주소
InVisage Technologies, Inc.
대리인 / 주소
Schwegman Lundberg & Woessner, P.A.
인용정보
피인용 횟수 :
1인용 특허 :
156
초록▼
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical
Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.
대표청구항▼
1. A method of making an image sensor, the method comprising: providing an integrated circuit having a top surface and an array of electrodes located therein, at least some of the array electrodes being arranged to convey signals from the array to an output; anddepositing an electrically active laye
1. A method of making an image sensor, the method comprising: providing an integrated circuit having a top surface and an array of electrodes located therein, at least some of the array electrodes being arranged to convey signals from the array to an output; anddepositing an electrically active layer onto at least a portion of the top surface of the integrated circuit such that it is in direct and continuous electrical contact with the at least a portion. 2. The method of claim 1, wherein the depositing of the electrically active layer is selected from at least one deposition method including spray-coating, dip-casting, drop-casting, evaporating, blade-casting, and spin-coating the electrically active layer onto the at least a portion of the top surface of the integrated circuit. 3. The method of claim 1, wherein the electrically active layer is optically sensitive. 4. The method of claim 1, wherein at least some of the electrodes of the integrated circuit are configured to define optical pixels which are to be read by others of the electrodes. 5. The method of claim 1, wherein a wavelength region of the electromagnetic spectrum is selected in which the electrically active layer is to operate. 6. The method of claim 5, wherein the selection of the wavelength region includes selecting nanocrystals of a particular size and including them in the electrically active layer. 7. The method of claim 5, wherein the wavelength region includes at least one wavelength selected from wavelengths of x-ray, infrared, visible, and ultraviolet regions of the electromagnetic spectrum. 8. The method of claim 1, wherein at least one electrode from the array of electrodes is provided over and in electrical contact with at least a portion of the electrically active layer. 9. The method of claim 8, wherein the at least one electrode is at least partially optically transparent. 10. The method of claim 8, wherein the at least one electrode includes at least one filter selected from a bandpass filter and a bandblock filter. 11. The method of claim 8, wherein the at least one electrode includes at least one material selected from materials including indium tin oxide, indium oxide, tungsten oxide, aluminum, gold, platinum, silver, magnesium, copper, and combinations and layer structures thereof. 12. The method of claim 8, further comprising forming an anti-reflection coating over the electrically active layer. 13. The method of claim 8, further comprising forming a protective coating over the electrically active layer to protect the layer from one or more environmental influences. 14. The method of claim 8, further comprising forming an optical filter over the electrically active layer, wherein the optical filter includes at least one filter selected from a bandpass filter and a bandstop filter. 15. The method of claim 1, wherein the integrated circuit includes a flexible substrate and is formed in a non-planar shape. 16. The method of claim 1, wherein the integrated circuit includes at least one of a semiconducting organic molecule and a semiconducting polymer; the integrated circuit includes at least one material selected from materials including silicon, silicon-on-insulator, silicon-germanium, indium phosphide, indium gallium arsenide, gallium arsenide, glass, and polymer. 17. The method of claim 1, wherein the image sensor includes a plurality of electrodes; and an optically sensitive layer formed between, in contact with, and in electrical communication with the electrodes, the electrodes to provide a signal indicative of radiation absorbed by the optically sensitive layer, the optically sensitive layer providing a photoconductive gain of at least about 100 A/W. 18. The method of claim 1, wherein the optically sensitive layer has a noise equivalent exposure of less than about 10−11 J/cm2 at wavelengths between 400 nm and 800 nm. 19. The method of claim 1, wherein the optically sensitive layer has a noise equivalent exposure of between about 10−11 J/cm2 to about 10−12 J/cm2 at wavelengths between 400 nm and 800 nm. 20. The method of claim 1, wherein the optically sensitive layer has a noise equivalent exposure of less than about 10−10 J/cm2 at wavelengths between about 400 nm and about 1400 nm. 21. The method of claim 1, wherein the electrically active layer is patterned by self-assembling the electrically active layer onto one or more selected regions of the at least a portion. 22. The method of claim 1, further comprising: depositing the electrically active layer is deposited over protrusions and trenches in the integrated circuit;planarizing the electrically active layer to remove portions of the layer from the protrusions, leaving portions of the electrically active layer in the trenches; andwherein the array of electrodes includes three-dimensional features and the electrically active layer conforms to the three-dimensional features.
Hafeman Dean G. (Hillsborough CA) Parce John W. (Palo Alto CA) McConnell Harden M. (Stanford CA), Device for photoresponsive detection and discrimination.
Alivisatos A. Paul (Oakland CA) Colvin Vickie (Springfield NJ), Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making s.
Jacobson, Joseph M.; Drzaic, Paul S.; Morrison, Ian D.; Pullen, Anthony E.; Wang, Jianna; Zehner, Robert W.; Gray, Caprice L.; Duthaler, Gregg M.; McCreary, Michael; Pratt, Emily J., Electrophoretic displays using nanoparticles.
Bulovic Vladimir ; Forrest Stephen R. ; Burrows Paul ; Garbuzov Dmitri Z., High efficiency organic light emitting devices with light directing structures.
Bulovic Vladimir ; Forrest Stephen R. ; Burrows Paul ; Garbuzov Dmitri Z., High reliability, high efficiency, integratable organic light emitting devices and methods of producing same.
Forrest Stephen R. ; Bulovic Vladimir ; Peumans Peter, Highly efficient multiple reflection photosensitive optoelectronic device with optical concentrator.
Burrows Paul E. ; Forrest Stephen R. ; Bulovic Vladimir ; Tian Peifang ; Brown Julie, Method for patterning light emitting devices incorporating a movable mask.
Forrest, Stephen R.; Bulovic, Vladimir; Peumans, Peter, Method of fabricating an organic photosensitive optoelectronic device with an exciton blocking layer.
Van Rijn, Cornelis Johannes Maria; Vogelaar, Laura; Nijdam, Wietze; Barsema, Jonathan Nathaniel; Wessling, Matthias, Method of making a product with a micro or nano sized structure and product.
Scher, Erik; Buretea, Mihai A.; Chow, Calvin; Empedocles, Stephen; Meisel, Andreas; Parce, J. Wallace, Nanostructure and nanocomposite based compositions and photovoltaic devices.
Donjon Jacques (Yerres FR) Grenot Michel (Brunoy FR) Hazan Jean-Pierre (Saint-Maur FR), Optical image converting relay having an electro-optical element and a photoconductive element.
Takanashi Itsuo (Kamakura JPX) Nakagaki Shintaro (Miura JPX) Negishi Ichiro (Yokosuka JPX) Suzuki Tetsuji (Yokosuka JPX) Tatsumi Fujiko (Yokohama JPX) Takahashi Ryusaku (Yokosuka JPX) Maeno Keiichi (, Optical system having photoconductive members and optical means for decomposing and composing the polarized lights for a.
Weiss Shimon ; Bruchez ; Jr. Marcel ; Alivisatos Paul, Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such p.
Shimon Weiss ; Marcel Bruchez, Jr. ; Paul Alivisatos, Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes.
Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul, Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes.
Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul, Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes.
Goldenberg Barany Barbara ; McPherson Scott A. ; Reimer Scott T. ; Ulmer Robert P. ; Zook J. David ; Hitchell ; deceased Maurice L., Process for forming a high gain, wide bandgap gallium nitride photoconductor having particular sensitivity to ultraviol.
Alivisatos A. Paul ; Peng Xiaogang ; Manna Liberato,ITX, Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process.
Alivisatos A. Paul ; Peng Xiaogang ; Manna Liberato,ITX, Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process.
Hakimi Farhad (Watertown MA) Bawendi Moungi G. (Cambridge MA) Tumminelli Richard (Ashland MA) Haavisto John R. (Marshfield Hills MA), Quantum dot Laser.
Sargent, Edward Hartley; Clifford, Jason Paul; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Sargent, Edward Hartley; Clifford, Jason Paul; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Sargent, Edward Hartley; Clifford, Jason Paul; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Sargent, Edward; Clifford, Jason; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Sargent, Edward; Clifford, Jason; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Sargent, Edward; Clifford, Jason; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Sargent, Edward; Clifford, Jason; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
Kruer ; Melvin R. ; Esterowitz ; Leon ; Bartoli ; Filbert J. ; Allen ; R oger E., Room-temperature, thin-film, PbS photoconductive detector hardened against laser damage.
Weiss Shimon ; Bruchez Marcel ; Alivisatos Paul, Semiconductor nanocrystal probes for biological applications and process for making and using such probes.
Sargent, Edward; McDonald, Steve; Zhang, Shiguo; Levina, Larissa; Konstantatos, Gerasimos; Cyr, Paul, Three-dimensional bicontinuous heterostructures, a method of making them, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics.
Sargent, Edward; McDonald, Steven Ashworth; Zhang, Shiguo; Levina, Larissa; Konstantatos, Gerasimos; Cyr, Paul, Three-dimensional bicontinuous heterostructures, method of making, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics.
Sargent, Edward; McDonald, Steven Ashworth; Zhang, Shiguo; Levina, Larissa; Konstantatos, Gerasimos; Cyr, Paul, Three-dimensional bicontinuous heterostructures, method of making, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics.
Forrest Stephen R. (Princeton NJ) Thompson Mark E. (Anaheim Hills CA) Burrows Paul E. (Princeton NJ) Bulovic Vladimir (Metuchen NJ) Gu Gong (Princeton NJ), Transparent contacts for organic devices.
Sargent, Edward Hartley; Clifford, Jason Paul; Konstantatos, Gerasimos; Howard, Ian; Klem, Ethan J. D.; Levina, Larissa, Quantum dot optical devices with enhanced gain and sensitivity and methods of making same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.