An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer inclu
An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
대표청구항▼
1. A semiconductor device comprising: a gate electrode;a gate insulating layer over the gate electrode;an oxide semiconductor layer over the gate insulating layer;a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, andan oxide insulating layer over and i
1. A semiconductor device comprising: a gate electrode;a gate insulating layer over the gate electrode;an oxide semiconductor layer over the gate insulating layer;a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, andan oxide insulating layer over and in contact with a region of the oxide semiconductor layer,wherein the gate electrode and the region of the oxide semiconductor layer overlap with each other with the gate insulating layer interposed therebetween, andwherein carrier density of the region of the oxide semiconductor layer is lower than or equal to 1×1014/cm3. 2. The semiconductor device according to claim 1, wherein the region of the oxide semiconductor layer comprises an intrinsic oxide semiconductor. 3. The semiconductor device according to claim 1, wherein the region of the oxide semiconductor layer is thinner than the other region of the oxide semiconductor layer. 4. The semiconductor device according to claim 1, wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 1×1020 cm−3. 5. The semiconductor device according to claim 1, wherein the region of the oxide semiconductor layer comprises an oxide semiconductor which is oxygen-excess type. 6. The semiconductor device according to claim 1, wherein the oxide insulating layer is a layer which blocks moisture, hydrogen ion and OH−. 7. The semiconductor device according to claim 1, wherein a peak of a desorption constituent, which is derived from moisture, is not shown in a spectrum of the oxide semiconductor layer which is shown with thermal desorption spectroscopy in a temperature range of greater than or equal to 200° C. 8. A semiconductor device comprising: an oxide semiconductor layer;a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;an oxide insulating layer over and in contact with a region of the oxide semiconductor layer; andan electrode over the oxide insulating layer,wherein the electrode overlaps the region of the oxide semiconductor layer, andwherein carrier density of the region of the oxide semiconductor layer is lower than or equal to 1×1014/cm3. 9. The semiconductor device according to claim 8, further comprising: a gate electrode; anda gate insulating layer,wherein the oxide semiconductor layer is over the gate insulating layer, andwherein the gate electrode and the electrode overlap with each other with the region of the oxide semiconductor layer interposed therebetween. 10. The semiconductor device according to claim 8, wherein the region of the oxide semiconductor layer comprises an intrinsic oxide semiconductor. 11. The semiconductor device according to claim 8, wherein the region of the oxide semiconductor layer is thinner than the other region of the oxide semiconductor layer. 12. The semiconductor device according to claim 8, wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 1×1020 cm−3. 13. The semiconductor device according to claim 8, wherein the region of the oxide semiconductor layer comprises an oxide semiconductor which is oxygen-excess type. 14. The semiconductor device according to claim 8, wherein the oxide insulating layer is a layer which blocks moisture, hydrogen ion and OH−. 15. The semiconductor device according to claim 8, wherein a peak of a desorption constituent, which is derived from moisture, is not shown in a spectrum of the oxide semiconductor layer which is shown with thermal desorption spectroscopy in a temperature range of greater than or equal to 200° C. 16. A semiconductor device comprising: a gate electrode;a gate insulating layer over the gate electrode;a first oxide semiconductor layer over the gate insulating layer;a second oxide semiconductor layer over the first oxide semiconductor layer;an electrode electrically connected to the second oxide semiconductor layer; andan oxide insulating layer over the first oxide semiconductor layer, the second oxide semiconductor layer and the electrode,wherein the first oxide semiconductor layer comprises a channel formation region,wherein the oxide insulating layer overlaps the channel formation region,wherein thickness of the second oxide semiconductor layer is smaller than thickness of the first oxide semiconductor layer, andwherein conductivity of the second oxide semiconductor layer is higher than conductivity of the first oxide semiconductor layer. 17. The semiconductor device according to claim 16, wherein the oxide insulating layer is a silicon oxide layer. 18. The semiconductor device according to claim 16, wherein the channel formation region comprises an intrinsic oxide semiconductor. 19. The semiconductor device according to claim 16, wherein hydrogen concentration of the first oxide semiconductor layer is less than or equal to 1×1020 cm−3.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (84)
Falster, Robert J.; Voronkov, Vladimir; Borionetti, Gabriella, Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering.
Kim, Chang-Jung; Song, I-Hun; Kang, Dong-Hun; Park, Young-Soo; Lee, Eun-Ha, Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor.
Iwasaki, Tatsuya, Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film.
Iwasaki, Tatsuya, Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film.
Iwasaki, Tatsuya, Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film.
Iwasaki, Tatsuya, Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film.
Yano, Koki; Kawashima, Hirokazu; Inoue, Kazuyoshi; Tomai, Shigekazu; Kasami, Masashi, Field effect transistor using oxide semicondutor and method for manufacturing the same.
Sano, Masafumi; Nakagawa, Katsumi; Hosono, Hideo; Kamiya, Toshio; Nomura, Kenji, Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator.
Hosono,Hideo; Hirano,Masahiro; Ota,Hiromichi; Orita,Masahiro; Hiramatsu,Hidenori; Ueda,Kazushige, LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film.
Omura, Hideyuki; Hayashi, Ryo; Kaji, Nobuyuki; Yabuta, Hisato, Method for manufacturing thin film transistor using oxide semiconductor and display apparatus.
Ohtsu, Shigemi; Shimizu, Keishi; Yatsuda, Kazutoshi; Akutsu, Eiichi, Method of forming crystalline semiconductor thin film on base substrate, lamination formed with crystalline semiconductor thin film and color filter.
Kim Dong-Gyu,KRX ; Lee Won-Hee,KRX, Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure.
Levy,David H.; Scuderi,Andrea C.; Irving,Lyn M., Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby.
Son, Kyoung-seok; Lee, Sang-yoon; Ryu, Myung-kwan; Kim, Tae-sang; Kwon, Jang-yeon; Park, Kyung-bae; Jung, Ji-sim, Methods of manufacturing an oxide semiconductor thin film transistor.
Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio, Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.
Itagaki, Naho; Den, Toru; Kaji, Nobuyuki; Hayashi, Ryo; Sano, Masafumi, Production method of thin film transistor using amorphous oxide semiconductor film.
Cillessen Johannes F. M.,NLX ; Blom Paulus W. M.,NLX ; Wolf Ronald M. ; Giesbers Jacobus B.,NLX, Semiconductor device having a transparent switching element.
Ito,Yoshihiro; Kadota,Michio, Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device.
Ishii,Hiromitsu; Hokari,Hitoshi; Yoshida,Motohiko; Yamaguchi,Ikuhiro, Thin film transistor having an etching protection film and manufacturing method thereof.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.