Semipolar nitride semiconductor structure and method of manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-029/40
H01L-021/02
C30B-025/18
H01L-033/12
H01L-033/00
출원번호
US-0532921
(2014-11-04)
등록번호
US-9583340
(2017-02-28)
우선권정보
KR-10-2013-0133820 (2013-11-05)
발명자
/ 주소
Kim, Jun-Youn
Kim, Jae-Kyun
Kim, Joo-Sung
Park, Young-Soo
Tak, Young-Jo
출원인 / 주소
SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
Muir Patent Law, PLLC
인용정보
피인용 횟수 :
0인용 특허 :
52
초록▼
Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semi
Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.
대표청구항▼
1. A method of manufacturing a semipolar nitride structure, the method comprising: preparing a silicon substrate having a Si(11k) surface satisfying 7≦k≦13;performing anisotropic etching on the Si(11k) surface of the prepared silicon substrate so that, at least at a first region of the Si(11k) surfa
1. A method of manufacturing a semipolar nitride structure, the method comprising: preparing a silicon substrate having a Si(11k) surface satisfying 7≦k≦13;performing anisotropic etching on the Si(11k) surface of the prepared silicon substrate so that, at least at a first region of the Si(11k) surface of the silicon substrate, a Si(111) facet is exposed by a larger amount than a Si(100) facet; andgrowing a nitride semiconductor layer on the first region of the silicon substrate,wherein the nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0. 2. The method of claim 1, wherein the anisotropic etching is performed using any one etching solution selected from a group consisting of KOH, TMAH, EDP, N2H2, HaOH, and CsOH. 3. The method of claim 1, wherein the anisotropic etching is maskless etching. 4. The method of claim 1, wherein the nitride semiconductor layer is a single crystalline GaN thin film. 5. The method of claim 4, wherein a c-axis of the GaN thin film is within a range satisfying 35°≦θ≦45°. 6. The method of claim 1, wherein the growing of the nitride semiconductor layer comprises forming a buffer layer on the silicon substrate. 7. The method of claim 6, wherein the buffer layer is formed of a material comprising any one selected from a group consisting of AlN, AlGaN, a step grade AlxInyGa1-x-yN (0≦x, y≦1, x+y≦1), and an Alx1Iny1Ga1-x1-y1N/Alx2Iny2Ga1-x2-y2N (0≦x1, x2, y1, y2≦1, x1≠x2 or y1≠y2, x1+y1≦1, x2+y2≦1) superlattice. 8. The method of claim 6, wherein the growing of the nitride semiconductor layer comprises forming a nucleation-growth layer on the silicon substrate, wherein the nucleation-growth layer is formed of AlN. 9. The method of claim 1, further comprising forming a nitride bulk layer using the nitride semiconductor layer as a seed layer. 10. The method of claim 9, further comprising removing the silicon substrate. 11. A method of manufacturing a semipolar nitride structure, the method comprising: performing anisotropic etching on a Si(11k) surface of a silicon substrate, where 7≦k≦13, so that, at least at a first region of the Si(11k) surface of the silicon substrate, a Si(111) facet is exposed by a larger amount than a Si(100) facet;forming a nitride semiconductor layer on the buffer layer, wherein the nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0; andremoving the silicon substrate from the nitride semiconductor layer. 12. The method of claim 11, wherein the nitride semiconductor layer is GaN.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (52)
Iza, Michael; Sato, Hitoshi; Hwang, Eu Jin; DenBaars, Steven P.; Nakamura, Shuji, (Al,In,Ga,B)N device structures on a patterned substrate.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same.
Preble, Edward A.; Tsvetkov, Denis; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Kaeding, John F.; Sato, Hitoshi; Iza, Michael; Asamizu, Hirokuni; Zhong, Hong; DenBaars, Steven P.; Nakamura, Shuji, Method for conductivity control of (Al,In,Ga,B)N.
Kaeding, John F.; Lee, Dong-Seon; Iza, Michael; Baker, Troy J.; Sato, Hitoshi; Haskell, Benjamin A.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji, Method for improved growth of semipolar (Al,In,Ga,B)N.
Hanser, Andrew D.; Liu, Lianghong; Preble, Edward A.; Tsvetkov, Denis; Williams, Nathaniel Mark; Xu, Xueping, Method for making group III nitride articles.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
Preble, Edward A.; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
Preble, Edward; Liu, Lianghong; Hanser, Andrew D.; Williams, N. Mark; Xu, Xueping, Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.