Lid assembly for a processing system to facilitate sequential deposition techniques
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/455
H01L-021/67
C23C-016/50
출원번호
US-0152730
(2014-01-10)
등록번호
US-9587310
(2017-03-07)
발명자
/ 주소
Tzu, Gwo-Chuan
Umotoy, Salvador P.
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan, LLP
인용정보
피인용 횟수 :
0인용 특허 :
236
초록▼
Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface t
Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system is provided and includes a lid having an upper lid surface opposed to a lower lid surface, a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface, a gas manifold disposed on the lid, at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process. The substrate processing system further contains a gas reservoir fluidly connected between the gas manifold and at least one precursor source.
대표청구항▼
1. A substrate processing system, comprising: a lid having an upper lid surface opposed to a lower lid surface;a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface;a gas manifold disposed on the lid;at least one valve coupled with the gas manifold and confi
1. A substrate processing system, comprising: a lid having an upper lid surface opposed to a lower lid surface;a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface;a gas manifold disposed on the lid;at least one valve coupled with the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process; anda gas reservoir fluidly connected between the gas manifold and at least one precursor source. 2. The substrate processing system of claim 1, further comprising a second gas reservoir, and the second gas reservoir is fluidly connected to the gas manifold through a gas line. 3. The substrate processing system of claim 2, wherein the second gas reservoir is fluidly connected between the gas manifold and at least one precursor source. 4. The substrate processing system of claim 1, wherein the gas reservoir has about 5 times the volume than required in each gas delivery cycle. 5. The substrate processing system of claim 1, further comprising a remote plasma source coupled with the gas manifold. 6. The substrate processing system of claim 5, wherein the remote plasma source is fluidly coupled to the at least one gas inlet passage. 7. The substrate processing system of claim 1, wherein the gas manifold comprises: an upper manifold surface and a lower manifold surface; anda first gas channel and a second gas channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface. 8. The substrate processing system of claim 7, wherein the first gas channel is in fluid communication with a first gas inlet passage of the plurality of gas inlet passages, and the second gas channel is in fluid communication with a second gas inlet passage of the plurality of gas inlet passages. 9. The substrate processing system of claim 8, wherein the first and second gas inlet passages are extended through the lid in a direction perpendicular to the upper lid surface. 10. The substrate processing system of claim 7, further comprising a third gas channel extending from the upper manifold surface to the lower manifold surface. 11. The substrate processing system of claim 1, wherein the gas manifold further comprises a conduit disposed therein and configured to flow a heat transfer fluid therethrough. 12. A substrate processing system, comprising: a lid having an upper lid surface opposed to a lower lid surface;a plurality of gas inlet passages extending from the upper lid surface to the lower lid surface;a gas manifold disposed on the lid;at least one valve coupled to the gas manifold and configured to control a gas flow through one of the gas inlet passages, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second for enabling an atomic layer deposition process; anda gas reservoir fluidly connected between the gas manifold and at least one precursor source. 13. The substrate processing system of claim 12, further comprising a second gas reservoir, and the second gas reservoir is fluidly connected to the gas manifold through a gas line. 14. The substrate processing system of claim 13, wherein the second gas reservoir is fluidly connected between the gas manifold and at least one precursor source. 15. The substrate processing system of claim 12, further comprising a remote plasma source coupled with the gas manifold. 16. The substrate processing system of claim 15, wherein the remote plasma source is fluidly coupled to the at least one gas inlet passage. 17. The substrate processing system of claim 12, wherein the gas manifold comprises: an upper manifold surface and a lower manifold surface; anda first gas channel and a second gas channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface. 18. The substrate processing system of claim 17, wherein the first gas channel is in fluid communication with a first gas inlet passage of the plurality of gas inlet passages, and the second gas channel is in fluid communication with a second gas inlet passage of the plurality of gas inlet passages. 19. The substrate processing system of claim 18, wherein the first and second gas inlet passages are extended through the lid in a direction perpendicular to the upper lid surface. 20. The substrate processing system of claim 18, wherein the gas manifold further comprises a conduit disposed therein and configured to flow a heat transfer fluid therethrough.
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이 특허에 인용된 특허 (236)
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