최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0791246 (2013-03-08) |
등록번호 | US-9589770 (2017-03-07) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 21 인용 특허 : 631 |
A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to th
A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber.
1. A remote plasma system comprising: a reactor comprising a reaction chamber;a remote plasma unit fluidly coupled to the reaction chamber and to a vacuum source;a first gas source fluidly coupled to the remote plasma unit, wherein the first gas source comprises a precursor for intermediate reactive
1. A remote plasma system comprising: a reactor comprising a reaction chamber;a remote plasma unit fluidly coupled to the reaction chamber and to a vacuum source;a first gas source fluidly coupled to the remote plasma unit, wherein the first gas source comprises a precursor for intermediate reactive species;a pressure control device in fluid communication with and interposed between the remote plasma unit and the vacuum source, wherein the pressure control device controls a pressure upstream of the pressure control device and wherein the pressure control device is a closed-loop pressure control device;a control valve, between the remote plasma unit and the reaction chamber, to pulse the intermediate reactive species from the remote plasma unit to the reaction chamber and to maintain steady-state operation of remote plasma unit; anda controller coupled to the pressure control device and to the control valve and configured to control the pressure control device and the control valve to maintain steady-state operation of the remote plasma unit when the intermediate reactive species are pulsed to the reaction chamber using the control valve to switch a flow of the intermediate reactive species between the reaction chamber and the vacuum source. 2. The remote plasma system of claim 1, further comprising a flow control unit coupled to the first gas source. 3. The remote plasma system of claim 1, wherein the reactor is selected from the group consisting of a plasma-enhance chemical vapor deposition reactor, a plasma-enhanced atomic layer deposition reactor, a plasma-enhanced etch reactor, a plasma-enhanced clean reactor, and a plasma-enhanced treatment reactor. 4. The remote plasma system of claim 1, wherein the control valve is a fast-response pneumatic valve. 5. The remote plasma system of claim 1, further comprising an integrated inlet manifold block. 6. The remote plasma system of claim 1, further comprising a catalyst between the remote plasma unit and the reaction chamber. 7. The remote plasma system of claim 6, wherein the catalyst is between the remote plasma unit and the control valve. 8. The remote plasma system of claim 6, wherein the catalyst comprises a material selected from the group consisting of, iron, magnesium oxide (MgO), titanium oxide (TiO2), platinum, palladium, and rhodium. 9. The remote plasma system of claim 1, further comprising a conductance match region between the remote plasma unit and the pressure control device. 10. The remote plasma system of claim 1, wherein the remote plasma unit is an inductively coupled plasma unit. 11. The remote plasma system of claim 1, wherein the remote plasma unit is a microwave plasma unit. 12. The remote plasma system of claim 1, wherein the first gas source comprises one or more of ammonia (NH3), water vapor (H2O), hydrogen peroxide (H202), MMH (mono methyl hydrazine), UDMH (unsymmetrically dimethyl hydrazine), 02/H2, N2/H2, and H2S. 13. A plasma-enhanced chemical vapor deposition system comprising: a deposition reactor comprising a reaction chamber;a remote plasma unit fluidly coupled to the reaction chamber and to a vacuum source;a first reactant source coupled to the remote plasma unit, wherein the first reactant source is a precursor for intermediate reactive species;a pressure control device in fluid communication with and interposed between the remote plasma unit and the vacuum source, wherein the pressure control device controls a pressure upstream of the pressure control device, and wherein the pressure control device is a closed-loop pressure control device;a control valve, between the remote plasma unit and the reaction chamber, to pulse the intermediate reactive species from the remote plasma unit to the reaction chamber and to maintain steady-state operation of remote plasma unit; anda controller coupled to the pressure control device and to the control valve to control the pressure control device and the control valve, the controller configured to maintain steady-state operation of the remote plasma unit when intermediate reactive species are pulsed to the reaction chamber using the control valve to switch a flow of the intermediate reactive species between the reaction chamber and the vacuum source. 14. The plasma-enhanced chemical vapor deposition system of claim 13, further comprising a catalyst between the remote plasma unit and the control valve. 15. The plasma-enhanced chemical vapor deposition system of claim 14, wherein the catalyst comprises a material selected from the group consisting of, iron, magnesium oxide (MgO), titanium oxide (TiO2), platinum, palladium, and rhodium. 16. The plasma-enhanced chemical vapor deposition system of claim 13, further comprising a conductance match region between the remote plasma unit and the vacuum source. 17. The plasma-enhanced chemical vapor deposition system of claim 16, wherein the conductance match region is between the remote plasma unit and the pressure control device. 18. The plasma-enhanced chemical vapor deposition system of claim 13, wherein the first reactant source comprises one or more of ammonia (NH3), water vapor (H2O), hydrogen peroxide (H202), MMH (mono methyl hydrazine), UDMH (unsymmetrically dimethyl hydrazine), 02/H2, N2/H2, and H2S. 19. A remote plasma system comprising: a reactor comprising a reaction chamber;a remote plasma unit fluidly coupled to the reaction chamber and to a vacuum source;a first gas source fluidly coupled to the remote plasma unit, wherein the first gas source comprises a precursor for intermediate reactive species;a pressure control device in fluid communication with and interposed between the remote plasma unit and the vacuum source, wherein the pressure control device controls a pressure upstream of the pressure control device and wherein the pressure control device is a closed-loop pressure control device;a control valve, between the remote plasma unit and the reaction chamber, to pulse the intermediate reactive species from the remote plasma unit to the reaction chamber and to maintain steady-state operation of remote plasma unit;a controller coupled to the pressure control device and to the control valve and configured to control the pressure control device and the control valve to maintain steady-state operation of the remote plasma unit when the intermediate reactive species are pulsed to the reaction chamber using the control valve to switch a flow of the intermediate reactive species between the reaction chamber and the vacuum source; anda catalyst between the remote plasma unit and the control valve, the catalyst comprising a material selected from the group consisting of, iron, magnesium oxide (MgO), titanium oxide (TiO2), platinum, palladium, and rhodium. 20. The remote plasma system of claim 19, further comprising a conductance match region between the remote plasma unit and the vacuum source.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.