초록 ▼

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal g

A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.

대표청구항 ▼

1. A monocrystalline SiC substrate, comprising: a substrate main surface;a central center longitudinal axis oriented perpendicular to said substrate main surface;a radial edge; andan SiC crystal structure having lattice planes, said lattice planes at each point have an angle of inclination relative

1. A monocrystalline SiC substrate, comprising: a substrate main surface;a central center longitudinal axis oriented perpendicular to said substrate main surface;a radial edge; andan SiC crystal structure having lattice planes, said lattice planes at each point have an angle of inclination relative to a direction of said center longitudinal axis, and peripheral angles of inclination at any desired point on said radial edge differ in terms of amount by at least 0.05° and at most 0.2° from a central angle of inclination at a site of said central center longitudinal axis. 2. The SiC substrate according to claim 1, wherein said substrate main surface has a diameter of about 100 mm, and a difference between the peripheral angles of inclination and the central angle of inclination in terms of amount is in a range between 0.05° and 0.15°. 3. The SiC substrate according to claim 2, wherein said SiC crystal structure has an axial dimension in a direction of said center longitudinal axis being in a range between 250 μm and 500 μm. 4. The SiC substrate according to claim 1, wherein said substrate main surface has a diameter of about 150 mm, and a difference between the peripheral angles of inclination and the central angle of inclination in terms of amount is in a range between 0.075° and 0.175°. 5. The SiC substrate according to claim 4, wherein said SiC crystal structure has an axial dimension in a direction of said center longitudinal axis being in a range between 300 μm and 600 μm. 6. The SiC substrate according to claim 1, wherein said substrate main surface has a diameter of about 200 mm, and the difference between the peripheral angles of inclination and said central angle of inclination in terms of amount is in a range between 0.1° and 0.2°. 7. The SiC substrate according to claim 6, wherein said SiC crystal structure an axial dimension in the direction of said center longitudinal axis is in a range between 350 μm and 700 μm.