An apparatus includes a differential amplifier. The differential amplifier includes a first side circuit configured to receive a first input signal, a second side circuit configured to receive a second input signal, and a resonant tank circuit coupled between the first and second side circuits. A fi
An apparatus includes a differential amplifier. The differential amplifier includes a first side circuit configured to receive a first input signal, a second side circuit configured to receive a second input signal, and a resonant tank circuit coupled between the first and second side circuits. A first capacitor and first switch may be provided in series between a source and drain of a cascode transistor. A second capacitor and second switch may be provided in series between a source and drain of an input transistor. A method includes receiving a first input signal by a first side circuit, receiving a second input signal by a second side circuit, controlling a resource of a resonant tank circuit, and outputting an output signal according to the first and second input signals. The resource of the resonant tank circuit may be controlled according to a transmission mode, frequency band, or both.
대표청구항▼
1. An apparatus comprising: a differential amplifier, the differential amplifier including: a first side circuit configured to receive a first input signal, the first side circuit including a first cascode transistor, a first capacitor, and a first switch, the first capacitor and the first switch be
1. An apparatus comprising: a differential amplifier, the differential amplifier including: a first side circuit configured to receive a first input signal, the first side circuit including a first cascode transistor, a first capacitor, and a first switch, the first capacitor and the first switch being provided in series between a source and a drain of the first cascode transistor;a second side circuit configured to receive a second input signal; anda resonant tank circuit coupled between the first and second side circuits. 2. The apparatus of claim 1, wherein the second side circuit includes a second cascode transistor,wherein the first and second input signals are a differential signal pair, andwherein the resonant tank circuit is coupled between the source of the first cascode transistor and a source of the second cascode transistor. 3. The apparatus of claim 1, further comprising: a controller circuit configured to control the first switch according to a transmission mode, a determination regarding a source-drain voltage of the first cascode transistor, or both. 4. The apparatus of claim 2, wherein the first side circuit further includes: a first input transistor, the first input transistor including a gate configured to receive the first input signal and a drain connected to the source of the first cascode transistor;a second capacitor; anda second switch,wherein the second capacitor and the second switch are provided in series between a source and the drain of the first input transistor. 5. The apparatus of claim 1, wherein the resonant tank circuit includes: an inductor; anda variable capacitor provided in parallel with the inductor. 6. The apparatus of claim 5, further comprising a controller circuit configured to control a capacitance value of the variable capacitor according to a transmission mode, a frequency band, or both. 7. The apparatus of claim 5, wherein the inductor and the variable capacitor are provided in a semiconductor die. 8. The apparatus of claim 1, wherein the resonant tank circuit is a first resonant tank circuit, and wherein the differential amplifier further includes: a third side circuit configured to receive the first input signal;a fourth side circuit configured to receive the second input signal; anda second resonant tank circuit coupled between the third and fourth side circuits. 9. The apparatus of claim 8, wherein the first cascode transistor is a first n-channel Metal-Oxide-Semiconductor Field Effect (nMOSFET) cascode transistor,wherein the second side circuit includes a second nMOSFET cascode transistor,wherein the third side circuit includes a first p-channel Metal-Oxide-Semiconductor Field Effect (pMOSFET) cascode transistor,wherein the fourth side circuit includes a second pMOSFET cascode transistor,wherein the first resonant tank circuit is coupled between the source of the first nMOSFET cascode transistor and a source of the second nMOSFET cascode transistor, andwherein the second resonant tank circuit is coupled between a source of the first pMOSFET cascode transistor and a source of the second pMOSFET cascode transistor. 10. The apparatus of claim 9, further comprising: a second capacitor coupled between the drain of the first nMOSFET cascode transistor and a drain of the first pMOSFET cascode transistor; anda third capacitor coupled between a drain of the second nMOSFET cascode transistor and a drain of the second pMOSFET cascode transistor. 11. An amplifier comprising: a transistor including a control terminal to receive an input signal, the transistor being a cascode transistor;a capacitor; anda switch,wherein the switch and the capacitor are provided in series between first and second conduction terminals of the transistor. 12. The amplifier of claim 11, wherein the transistor is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). 13. A method comprising: receiving a first input signal by a first side circuit, the first side circuit including a cascode transistor, a first capacitor, and a first switch, the first capacitor and the first switch being provided in series between a source and a drain of the cascode transistor;receiving a second input signal by a second side circuit;controlling a resource of a resonant tank circuit; andoutputting an output signal according to the first and second input signals. 14. The method of claim 13, wherein the resonant tank circuit is coupled between the first and second side circuits. 15. The method of claim 13, further comprising: detecting a condition associated with an occurrence of a high source-drain voltage of the transistor; andturning on the switch when the condition is detected. 16. The method of claim 13, further comprising: receiving the first input signal by a third side circuit;receiving the second input signal by a fourth side circuit; andcombining outputs of the first, second, third and fourth side circuits. 17. The method of claim 13, further comprising controlling the resource of the resonant tank circuit according to a transmission mode, a frequency band, or both. 18. The method of claim 13, wherein the first side circuit further includes an input transistor, a second capacitor, and a second switch, the input transistor receiving the first input signal, and wherein the second capacitor and the second switch are provided in series between a source of the input transistor and a drain of the input transistor, the method further comprising closing the second switch when a situation is detected wherein a high source-drain voltage might occur. 19. The amplifier of claim 11, wherein the capacitor is a first capacitor, and the switch is a first switch, the amplifier further comprising: an input transistor transistor including a gate configured to receive an input signal and a drain connected to the source of the cascode transistor;a second capacitor; anda second switch,wherein the second capacitor and the second switch are provided in series between a source and the drain of the input transistor.
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이 특허에 인용된 특허 (2)
Ralph Duncan ; Tom W. Kwan, System and method for narrow band PLL tuning.
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