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A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The me

A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

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1. A method for fabricating a three-dimensional integrated circuit device, the method comprising: providing a first substrate having a first crystal orientation;forming at least one or more PMOS devices overlying the first substrate;forming a first dielectric layer overlying the one or more PMOS dev

1. A method for fabricating a three-dimensional integrated circuit device, the method comprising: providing a first substrate having a first crystal orientation;forming at least one or more PMOS devices overlying the first substrate;forming a first dielectric layer overlying the one or more PMOS devices;providing a second substrate having a second crystal orientation;forming at least one or more NMOS devices overlying the second substrate;forming a second dielectric layer overlying the one or more NMOS devices; andcoupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate;forming a third dielectric layer overlying the hybrid structure; andforming a pressure sensing device overlying the third dielectric layer,wherein forming the pressure sensing device comprising: forming a diaphragm device having a first surface region facing and overlying the hybrid structure and a second surface region opposite the first surface region;forming at least one or more folded spring devices spatially disposed within a vicinity of the first surface region of the diaphragm device, each of the folded spring devices being operably coupled to the first surface region of the diaphragm device;forming two or more electrode devices operably coupled to the first surface region;forming a first cavity region provided between the first surface region and the hybrid structure, the first cavity region being substantially sealed and maintaining a predetermined environment; andforming a housing member provided overlying the second surface region of the diaphragm device to form a second cavity region between the housing member and the diaphragm device, the housing member comprising one or more fluid openings to allow fluid to move between the second cavity and a region outside of the housing member. 2. The method of claim 1 wherein the first crystal orientation comprises a (110) crystal orientation or a (111) crystal orientation. 3. The method of claim 1 wherein the second crystal orientation comprises a (100) crystal orientation. 4. The method of claim 1 wherein the coupling of the first and second dielectric layer comprises a covalent, eutectic, glass frit, SOG, thermal compression, or fusion bonding process. 5. The method of claim 1 further comprising forming one or more trench isolation (STI) oxides formed to isolate adjacent transistors. 6. The method of claim 1 further comprising thinning the first substrate via a grinding, polishing, etching, or cleaving process. 7. The method of claim 1 wherein the forming of the one or more PMOS transistors comprises an implanting process in a (111) silicon substrate. 8. The method of claim 7 wherein the implanting process comprises implanting H2, He, or Ar in a desired depth in the silicon substrate. 9. The method of claim 1 further comprising forming one or more vertical interconnects within one or more portions of the hybrid structure. 10. A method for forming a three-dimensional integrated circuit device comprising: forming a first substrate having a first crystal orientation and including: at least one or more PMOS device thereon; anda first dielectric layer overlying the one or more PMOS devices;forming a second substrate having a second crystal orientation, and including: at least one or more NMOS devices thereon; anda second dielectric layer overlying the one or more NMOS devices;coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate; andforming a pressure sensing device overlying the hybrid structure,wherein forming the pressure sensing device comprising: forming a diaphragm device having at least a first diaphragm surface region facing the hybrid structure and a second diaphragm surface region opposite the first surface region;forming one or more spring devices spatially disposed within a vicinity of the first diaphragm surface region of the diaphragm device, each of the spring devices being operably coupled to the first diaphragm surface region of the diaphragm device;forming two or more electrode devices operably coupled to the first diaphragm surface region;forming at least one fluid channel formed between the two or more electrode devices, at least one of the fluid channels being in communication with the first diaphragm surface region of the diaphragm device; andforming a housing member provided overlying the diaphragm device to form a cavity region between the housing member and the diaphragm device, the housing member comprising one or more first fluid openings to allow fluid to move between the cavity and a first region outside of the housing member, the one or more fluid openings being in communication with the second diaphragm surface region of the diaphragm. 11. The method of claim 10 wherein the first crystal orientation comprises a (110) crystal orientation or a (111) crystal orientation. 12. The method of claim 10 wherein the second crystal orientation comprises a (100) crystal orientation. 13. The method of claim 10 wherein the coupling of the first and second dielectric layer comprises a covalent, eutectic, glass frit, SOG, thermal compression, or fusion bonding process. 14. The method of claim 10 further comprising forming one or more trench isolation (STI) oxides formed to isolate adjacent transistors. 15. The method of claim 10 further comprising thinning the first substrate via a grinding, polishing, etching, or cleaving process. 16. The method of claim 10 wherein the forming of the one or more PMOS transistors comprises an implanting process in a (111) silicon substrate. 17. The method of claim 10 wherein the implanting process comprises implanting H2, He, or Ar in a desired depth in the silicon substrate. 18. The method of claim 10 wherein further comprising forming one or more vertical interconnects within one or more portions of the hybrid structure.