Semiconductor packages and data storage devices including the same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/48
G01K-007/16
H01L-025/18
G11C-007/04
G01K-007/02
G01L-001/22
H01L-025/10
H01L-021/66
G11C-005/04
G01B-007/16
H01L-023/31
H01L-023/58
H01L-023/00
H01L-025/065
출원번호
US-0499629
(2014-09-29)
등록번호
US-9599516
(2017-03-21)
우선권정보
KR-10-2014-0028456 (2014-03-11)
발명자
/ 주소
Lee, EungChang
출원인 / 주소
Samsung Electronics Co., Ltd.
대리인 / 주소
Ward and Smith, P.A.
인용정보
피인용 횟수 :
0인용 특허 :
9
초록▼
A semiconductor package includes a package substrate having first connecting pads and second connecting pads, and a semiconductor chip mounted on the package substrate. The semiconductor chip includes a semiconductor device comprising a semiconductor substrate and electrically connected to input/out
A semiconductor package includes a package substrate having first connecting pads and second connecting pads, and a semiconductor chip mounted on the package substrate. The semiconductor chip includes a semiconductor device comprising a semiconductor substrate and electrically connected to input/output (I/O) pads, and a measuring device formed on the semiconductor device and electrically connected to measuring pads. The I/O pads are electrically connected to the first connecting pads, and the measuring pads are electrically connected to the second connecting pads.
대표청구항▼
1. A semiconductor package comprising: a package substrate having first connecting pads and second connecting pads; anda semiconductor chip mounted on the package substrate, the semiconductor chip including a semiconductor device, a measuring device, input/output (I/O) pads, and measuring pads,where
1. A semiconductor package comprising: a package substrate having first connecting pads and second connecting pads; anda semiconductor chip mounted on the package substrate, the semiconductor chip including a semiconductor device, a measuring device, input/output (I/O) pads, and measuring pads,wherein the semiconductor device comprises a semiconductor substrate and is electrically connected to the I/O pads,wherein the measuring device comprises a redistribution pattern and is on the semiconductor device and is electrically connected to the measuring pads,wherein the I/O pads are electrically connected to the first connecting pads, andwherein the measuring pads are electrically connected to the second connecting pads. 2. The semiconductor package of claim 1, wherein the semiconductor device further comprises: integrated circuit elements on the semiconductor substrate; and an insulating layer covering integrated circuit elements, and wherein the redistribution pattern is on the insulating layer of the semiconductor device. 3. The semiconductor package of claim 2, wherein the measuring device comprises: a thermocouple having metal patterns of metal materials that are different from each other and are on the insulating layer of the semiconductor device. 4. The semiconductor package of claim 2, wherein the measuring device comprises: a strain gauge having a metal grid on the insulating layer of the semiconductor device. 5. The semiconductor package of claim 1, wherein the measuring device is electrically insulated from the semiconductor device. 6. A semiconductor package comprising: a package substrate having first connecting pads and second connecting pads; anda semiconductor chip mounted on the package substrate, the semiconductor chip including a semiconductor device, a measuring device, input/output (I/O) pads, and measuring pads,wherein the semiconductor device comprises a semiconductor substrate and is electrically connected to the I/O pads,wherein the measuring device is on the semiconductor device and is electrically connected to the measuring pads,wherein the I/O pads are electrically connected to the first connecting pads, andwherein the measuring pads are electrically connected to the second connecting padswherein the semiconductor chip further comprises: through-electrodes penetrating the semiconductor substrate and connected to the measuring pads. 7. The semiconductor package of claim 1, further comprising: bonding wires electrically connecting the measuring pads to the second connecting pads. 8. The semiconductor package of claim 1, further comprising: a controller chip mounted on the package substrate,wherein the controller chip receives a signal measured from the measuring device of the semiconductor chip to control operation of the semiconductor chip. 9. A data storage device comprising: a semiconductor chip comprising a semiconductor device and a measuring device on the semiconductor device, the semiconductor device including a semiconductor substrate, and the measuring device configured to measure physical variation of the semiconductor chip and to output a measured signal based on the physical variation; anda controller receiving the measured signal from the semiconductor chip and controlling operation of the semiconductor chip responsive to the measured signal wherein the semiconductor device further comprises: integrated circuit elements on the semiconductor substrate; and an insulating layer covering the integrated circuit elements, andwherein the measuring device comprises: a redistribution pattern on the insulating layer of the semiconductor device. 10. The data storage device of claim 9, wherein the measuring device is electrically insulated from the semiconductor device. 11. The data storage device of claim 9, wherein the measuring device is configured to measure a temperature of the semiconductor chip to output the measured temperature as the measured signal, wherein the controller is configured to compare the measured temperature with a reference temperature, andwherein the controller is configured to reduce an operating speed of the semiconductor chip when the measured temperature is higher than the reference temperature. 12. The data storage device of claim 9, wherein the measuring device comprises: a thermocouple having metal patterns of metal materials that are different from each other. 13. The data storage device of claim 9, wherein the measuring device comprises: a strain gauge having a metal grid. 14. A semiconductor package comprising: a memory chip, the memory chip including a semiconductor substrate, integrated circuit elements including data storage elements on the semiconductor substrate, an insulating layer covering the integrated circuit elements, and a measuring device on the insulating layer, the measuring device configured to measure physical variation of the memory chip and to output a measured signal based on the physical variation; anda controller receiving the measured signal from the memory chip to control operation of the memory chip responsive to the measured signal. 15. The semiconductor package of claim 14, further comprising: a first package substrate on which the controller is mounted; anda second package substrate on which the memory chip is mounted,wherein the second package substrate is stacked on the first package substrate. 16. The semiconductor package of claim 15, wherein the second package substrate includes first connecting pads and second connecting pads, and wherein the integrated circuit elements are electrically connected to the first connecting pads and the measuring device is electrically connected to the second connecting pads. 17. The semiconductor package of claim 14, wherein the measuring device comprises: a thermocouple having metal patterns of metal materials that are different from each other and are on the insulating layer. 18. The semiconductor package of claim 14, wherein the measuring device comprises: a strain gauge having a metal grid on the insulating layer. 19. The semiconductor package of claim 14, further comprising: a package substrate on which the controller and the memory chip are mounted, andwherein the controller and the memory chip are spaced apart from each other.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (9)
Law, Jonathan Michael; Harley, Nigel Henry, Active thermal management of semiconductor devices.
Kinard Joseph R. (Darnestown MD) Huang De-xiang (Gaithersburg MD) Novotny Donald B. (Bethesda MD), Multilayer thin film multijunction integrated micropotentiometers.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.