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Switching device having a non-linear element

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-011/00
  • H01L-045/00
  • G11C-013/00
  • H01L-027/24
출원번호 US-0612025 (2015-02-02)
등록번호 US-RE46335 (2017-03-07)
발명자 / 주소
  • Lu, Wei
  • Jo, Sung Hyun
  • Nazarian, Hagop
출원인 / 주소
  • Crossbar, Inc.
대리인 / 주소
    Amin, Turocy & Watson, LLP
인용정보 피인용 횟수 : 0  인용 특허 : 192

초록

Method for a memory including a first, second, third and fourth cells include applying a read, program, or erase voltage, the first and second cells coupled to a first top interconnect, the third and fourth cells coupled to a second top interconnect, the first and third cells coupled to a first bott

대표청구항

1. Method for operating a memory comprising: applying a read voltage to the memory, wherein the memory comprising a plurality of cells including at least a first cell, a second cell, a third cell, and a fourth cell,wherein the first cell and the second cell are coupled to a first top electrode,where

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