Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C25D-005/02
C25D-003/38
H05K-003/42
H01L-021/768
C25D-007/12
H01L-021/288
H01L-023/532
출원번호
US-0325601
(2014-07-08)
등록번호
US-9613858
(2017-04-04)
발명자
/ 주소
Paneccasio, Jr., Vincent
Lin, Xuan
Hurtubise, Richard
Chen, Qingyun
출원인 / 주소
Paneccasio, Jr., Vincent
대리인 / 주소
Carmody Torrance Sandak & Hennessey LLP
인용정보
피인용 횟수 :
0인용 특허 :
40
초록
A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
대표청구항▼
1. An electrolytic deposition composition comprising: (a) a source of copper ions;(b) a suppressor, wherein the suppressor comprises at least one amine functional group;(c) an accelerator, wherein the accelerator is an organic sulfur compound; and(d) a leveler compound, wherein the leveler compound
1. An electrolytic deposition composition comprising: (a) a source of copper ions;(b) a suppressor, wherein the suppressor comprises at least one amine functional group;(c) an accelerator, wherein the accelerator is an organic sulfur compound; and(d) a leveler compound, wherein the leveler compound comprises a polymer comprising the following general structure (IV): wherein B is selected from among: a single bond, an oxygen atom (—O—), a methenyl hydroxide a carbonyl an amino an imino a sulfur atom (—S—), a sulfoxide a phenylene and a glycol and p and q may be the same or different, are integers between 0 and 6, wherein at least one of p and q is at least 1;X is an integer from one to about four;Y and Z are leaving groups selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, brosylate, or nosylate; m is an integer between zero and six; and n is an integer that is at least 2; andR1 through R14 are each independently hydrogen, substituted or unsubstituted alkyl having from one to six carbon atoms, substituted or unsubstituted alkylene having from one to six carbon atoms, or substituted or unsubstituted aryl. 2. A composition as set forth in claim 1 wherein the leveler compound comprises a polymer having the following general structure (V): 3. A composition as set forth in claim 1 wherein the leveler compound is selected from the group consisting of: (i) a polymer comprising the following structure (VI): wherein n is an integer of at least 2;(ii) a polymer comprising the following structure (IX): wherein n is an integer of at least 2;(iii) a polymer comprising the following structure (X): wherein n is an integer of at least 2;(iv) a polymer comprising the following structure (XI): wherein n is an integer of at least 2; and(v) a polymer comprising the following structure (XII): wherein n is an integer of at least 2. 4. A composition as set forth in claim 1 wherein the leveler compound comprises a polymer comprising the following general structure (VII): wherein n is an integer of at least 2. 5. A composition as set forth in claim 1 wherein the leveler compound comprises a polymer comprising the following structure (VIII): wherein n is an integer of at least 2. 6. The electrolytic deposition composition according to claim 1, wherein the accelerator is a water soluble organic divalent sulfur compound. 7. The electrolytic deposition composition according to claim 6, wherein the accelerator is in the composition at a concentration between about 1 ppm and about 50 ppm. 8. The electrolytic deposition composition according to claim 6, wherein the organic sulfur compound is 3,3-dithiobis(1-propanesulfonic acid). 9. The electrolytic deposition composition according to claim 1, wherein the suppressor is an EO/PO block copolymer with a molecular weight between about 1000 g/mol and about 30,000 g/mol. 10. The electrolytic deposition composition according to claim 9, wherein the suppressor is in the composition at a concentration between about 10 and about 1000 ppm. 11. An electrolytic deposition composition comprising: (a) a source of copper ions;(b) a suppressor, wherein the suppressor comprises at least one amine functional group;(c) an accelerator, wherein the accelerator is an organic sulfur compound; and(d) a leveler compound, the leveler compound comprises the following general structure (XIII): wherein B is selected from among: a single bond, an oxygen atom (—O—), a methenyl hydroxide a carbonyl an amino an imino a sulfur atom (—S—), a sulfoxide a phenylene and a glycol and p and q may be the same or different, are integers between 0 and 6, wherein at least one of p and q is at least 1;X is an integer from one to about four;Y and Z are leaving groups selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, brosylate, or nosylate; and m is an integer between zero and six; andR1 through R14 are each independently hydrogen, substituted or unsubstituted alkyl having from one to six carbon atoms, substituted or unsubstituted alkylene having from one to six carbon atoms, or substituted or unsubstituted aryl. 12. A composition as set forth in claim 11 wherein the leveler compound comprises the following general structure (XVI): 13. A composition as set forth in claim 11 wherein the leveler compound comprises the following structure (XVII): 14. A composition as set forth in claim 11 wherein the leveler compound comprises the following structure (XVIII): 15. A composition as set forth in claim 11 wherein the leveler compound comprises the following general structure (XIV): 16. A composition as set forth in claim 11 wherein the leveler compound comprises the following general structure (XV):
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