Thin film battery on an integrated circuit or circuit board and method thereof
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01M-002/08
H01M-002/20
H01M-002/26
H01M-006/40
H01M-010/04
H01L-023/58
H01M-002/02
H01M-010/052
H01M-010/0562
H01M-010/42
H01M-010/0585
H01M-010/0525
출원번호
US-0191069
(2014-02-26)
등록번호
US-9634296
(2017-04-25)
발명자
/ 주소
Johnson, Raymond R.
Snyder, Shawn W.
Brantner, Paul C.
Bradow, Timothy J.
Neudecker, Bernd J.
출원인 / 주소
Sapurast Research LLC
대리인 / 주소
Blakely, Sokoloff, Taylor & Zafman LLP
인용정보
피인용 횟수 :
0인용 특허 :
601
초록▼
The present invention relates to flexible thin film batteries on semiconducting surface or the conductive or insulating packaging surface of a semiconductor device and methods of constructing such batteries. Electrochemical devices may be glued to a semiconducting surface or the conductive or insula
The present invention relates to flexible thin film batteries on semiconducting surface or the conductive or insulating packaging surface of a semiconductor device and methods of constructing such batteries. Electrochemical devices may be glued to a semiconducting surface or the conductive or insulating packaging surface of a semiconductor device or deposited directly thereon. The invention also relates to flexible thin film batteries on flexible printed circuit board where the electrochemical devices may also be glued or deposited on the flexible printed circuit board.
대표청구항▼
1. An integrated circuit including a battery, comprising: a semiconductor device having a surface;a bonding layer coupled with the surface of the semiconductor device, the bonding layer comprising a first embedded conductor and a second embedded conductor;a battery cell structure in selective electr
1. An integrated circuit including a battery, comprising: a semiconductor device having a surface;a bonding layer coupled with the surface of the semiconductor device, the bonding layer comprising a first embedded conductor and a second embedded conductor;a battery cell structure in selective electrical contact with the surface of the semiconductor device via the first embedded conductor; anda first electrical contact having a lower surface to which the battery cell structure is directly attached, wherein the bonding layer and the battery cell structure are sandwiched between the surface of the semiconductor device and the lower surface of the first electrical contact, wherein the surface of the semiconductor device is in selective electrical contact with the first electrical contact via the second embedded conductor being in direct contact with the lower surface of the first electrical contact to which the battery cell structure is directly attached. 2. The integrated circuit of claim 1, wherein both the first embedded conductor and the second embedded conductor directly contact the surface of the semiconductor device. 3. The integrated circuit of claim 1, wherein the first electrical contact comprises an encapsulate metal. 4. The integrated circuit of claim 1, wherein the bonding layer comprises a material selected from a group consisting of an adhesive material, an insulating material, plastic, glass, reinforcement materials, and fiberglass. 5. The integrated circuit of claim 1, wherein each of the first embedded conductor and the second embedded conductor is selected from a group consisting of a tab, a wire, a metal strip, a metal ribbon, multiple wires, multiple metal strips, multiple metal ribbons, a wire mesh, a perforated metal, a metal coating applied to an adhesive layer, and a disk. 6. The integrated circuit of claim 1, wherein the battery cell structure is deposited on the first electrical contact. 7. The integrated circuit of claim 1, wherein the surface of the semiconductor device is selected from a group consisting of a semiconducting surface, a conductive surface, and an insulating packaging surface. 8. The integrated circuit of claim 7, wherein the surface of the semiconductor device acts as an encapsulate of the battery cell structure. 9. The integrated circuit of claim 1, wherein the first embedded conductor and the second embedded conductor are woven within the bonding layer. 10. The integrated circuit of claim 9, wherein the bonding layer comprises a slit within which the first embedded conductor is woven. 11. A method of manufacturing a battery on a first electrical contact comprising: creating a selectively conductive bonding layer, the bonding layer comprising a first embedded conductor and a second embedded conductor;coupling the bonding layer with an upper horizontal surface of a semiconductor device, wherein both the first embedded conductor and the second embedded conductor directly contact the upper horizontal surface of the semiconductor device;directly attaching a first side of a battery cell structure to a lower surface of the first electrical contact; andcoupling a second side of the battery cell structure with the bonding layer, wherein the second side of the battery cell structure is in direct contact with the first embedded conductor; and wherein the upper horizontal surface of the semiconductor device is in selective electrical contact with the first electrical contact via the second embedded conductor being in direct contact with the lower surface of the first electrical contact to which the first side of the battery cell structure is directly attached. 12. The method of claim 11, wherein the upper horizontal surface of the semiconductor device, with which the bonding layer is coupled, is one of a semiconducting surface, a conductive surface or an insulating surface. 13. The method of claim 11, wherein directly attaching the first side of the battery cell structure to the lower surface of the first electrical contact comprises depositing the battery cell structure on the first electrical contact.
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