Rectangular parallelepiped fluid storage and dispensing vessel
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B01D-053/04
F17C-011/00
B01D-053/053
F17C-013/08
출원번호
US-0746776
(2015-06-22)
등록번호
US-9636626
(2017-05-02)
발명자
/ 주소
Brestovansky, Dennis
Wodjenski, Michael J.
Arno, Jose I.
Carruthers, J. Donald
Moroco, Philip A.
출원인 / 주소
Entegris, Inc.
대리인 / 주소
Entegris, Inc. Legal Dept.
인용정보
피인용 횟수 :
0인용 특허 :
127
초록▼
A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. B
A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.
대표청구항▼
1. A method of reducing flow of sweep gas through an interior volume of a ventilated gas cabinet arranged to contain a gas supply system including gas supply vessel(s), said method comprising using physical adsorbent-based gas storage and dispensing vessel(s) as said gas supply vessel(s), and reduci
1. A method of reducing flow of sweep gas through an interior volume of a ventilated gas cabinet arranged to contain a gas supply system including gas supply vessel(s), said method comprising using physical adsorbent-based gas storage and dispensing vessel(s) as said gas supply vessel(s), and reducing flow of sweep gas through said interior volume, in relation to flow of sweep gas through said interior volume when the gas cabinet contains gas supply vessel(s) that are not physical adsorbent-based, wherein the physical adsorbent-based gas storage and dispensing vessel(s) comprise a valve head coupled with an automatic valve actuator, wherein the automatic valve actuator is operable to open a valve in the valve head to dispense gas from the gas supply vessel(s), and wherein the physical adsorbent comprises a multiplicity of monolithic carbon adsorbent articles of cylindrical form, abutting one another in face-to-face contact at circular cross-section end surfaces thereof. 2. The method of claim 1, wherein the gas supply vessel(s) contain a sorbate gas comprising a semiconductor manufacturing gas. 3. The method of claim 2, wherein the semiconductor manufacturing gas is selected from the group consisting of gases for ion implantation, gases for non-ion implant doping, gases for chemical vapor deposition, gases for reactive ion etching, and gases for photoresist residue removal. 4. The method of claim 1, wherein said gas supply vessel(s) contain a sorbate gas selected from the group consisting of arsine, phosphine, hydrogen selenide, hydrogen telluride, nitrogen trifluoride, boron trifluoride, boron trichloride, diborane, trimethylsilane, tetramethylsilane, disilane, silane, germane, and organometallic gaseous reagents. 5. The method of claim 1, wherein the gas supply vessel(s) contain a sorbate gas at subatmospheric pressure. 6. The method of claim 1, wherein the gas supply vessel(s) contain a sorbate gas at pressure not exceeding 1500 torr. 7. The method of claim 1, wherein the sweep gas discharged from the interior volume of the ventilated gas cabinet is discharged to a house exhaust system of a facility in which the ventilated gas cabinet is deployed. 8. The method of claim 1, wherein the sweep gas is discharged from the interior volume of the ventilated gas cabinet for treatment and is recirculated through the interior volume of the ventilated gas cabinet as a recycled sweep gas. 9. The method of claim 1, wherein the sweep gas comprises clean dry air. 10. The method of claim 1, wherein the automatic valve actuator is operatively connected to a central process unit comprising a programmable computer programmably arranged to carry out operation with dispensing of gas from the gas supply vessel(s) during a predetermined period of operation of the ventilated gas cabinet, by actuating the automatic valve actuator for such operation, and terminating the dispensing at the conclusion of the predetermined period of operation. 11. A gas cabinet assembly comprising an enclosure with an interior volume that contains physical adsorbent-based gas supply vessel(s), and arranged to be ventilated by flow of sweep gas through the interior volume from a source of said sweep gas exterior to the enclosure, and discharge thereof from the enclosure, wherein the gas cabinet assembly is arranged so that it flows said sweep gas through the enclosure at a reduced rate of flow in relation to a corresponding gas cabinet assembly containing gas supply vessel(s) lacking said physical adsorbent, wherein the physical adsorbent-based gas storage and dispensing vessel(s) comprise a valve head coupled with an automatic valve actuator, wherein the automatic valve actuator is operable to open a valve in the valve head to dispense gas from the gas supply vessel(s), and wherein the physical adsorbent comprises a multiplicity of monolithic carbon adsorbent articles of cylindrical form, abutting one another in face-to-face contact at circular cross-section end surfaces thereof. 12. The gas cabinet assembly of claim 11, wherein the enclosure is a component part of a semiconductor process tool. 13. The gas cabinet assembly of claim 11, wherein the enclosure comprises a gas box in an ion implantation system. 14. The gas cabinet assembly of claim 11, wherein the gas supply vessel(s) contain a sorbate gas comprising a semiconductor manufacturing gas. 15. The gas cabinet assembly of claim 14, wherein the semiconductor manufacturing gas is selected from the group consisting of gases for ion implantation, gases for non-ion implant doping, gases for chemical vapor deposition, gases for reactive ion etching, and gases for photoresist residue removal. 16. The gas cabinet assembly of claim 11, wherein said gas supply vessel(s) contain a sorbate gas selected from the group consisting of arsine, phosphine, hydrogen selenide, hydrogen telluride, nitrogen trifluoride, boron trifluoride, boron trichloride, diborane, trimethylsilane, tetramethylsilane, disilane, silane, germane, and organometallic gaseous reagents. 17. The gas cabinet assembly of claim 11, wherein the gas supply vessel(s) contain a sorbate gas at subatmospheric pressure. 18. The gas cabinet assembly of claim 11, wherein the gas supply vessel(s) contain a sorbate gas at pressure not exceeding 1500 torr. 19. The gas cabinet assembly of claim 11, wherein the sweep gas discharged from the enclosure is discharged to a house exhaust system of a facility in which the enclosure is deployed, or treated and recirculated through the enclosure as a recycled sweep gas. 20. The gas cabinet assembly of claim 11, wherein the automatic valve actuator is operatively connected to a central process unit comprising a programmable computer programmably arranged to carry out operation with dispensing of gas from the gas supply vessel(s) during a predetermined period of operation of the gas cabinet assembly, by actuating the automatic valve actuator for such operation, and terminating the dispensing at the conclusion of the predetermined period of operation.
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