Silicon carbide single crystal manufacturing apparatus
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C30B-025/08
C30B-025/10
C30B-025/14
C30B-029/36
C30B-025/12
출원번호
US-0126520
(2012-07-24)
등록번호
US-9644286
(2017-05-09)
우선권정보
JP-2011-165719 (2011-07-28)
국제출원번호
PCT/JP2012/004699
(2012-07-24)
§371/§102 date
20131216
(20131216)
국제공개번호
WO2013/014920
(2013-01-31)
발명자
/ 주소
Hara, Kazukuni
출원인 / 주소
DENSO CORPORATION
대리인 / 주소
Posz Law Group, PLC
인용정보
피인용 횟수 :
0인용 특허 :
1
초록▼
A silicon carbide single crystal manufacturing apparatus includes a vacuum chamber, a pedestal on which a seed crystal is disposed, an inlet of source gas, a reaction chamber extending from a bottom surface of the vacuum chamber toward the pedestal, a first heating device disposed around an outer pe
A silicon carbide single crystal manufacturing apparatus includes a vacuum chamber, a pedestal on which a seed crystal is disposed, an inlet of source gas, a reaction chamber extending from a bottom surface of the vacuum chamber toward the pedestal, a first heating device disposed around an outer periphery of the reaction chamber, a second heating device disposed around an outer periphery of the pedestal, and an outlet disposed outside the first and second heating devices in the vacuum chamber. After the source gas supplied from the reaction chamber is supplied toward the pedestal, the source gas is let flow outward in a radial direction of the silicon carbide single crystal between the reaction chamber and the silicon carbide single crystal and is discharged through the outlet.
대표청구항▼
1. A silicon carbide single crystal manufacturing apparatus comprising: a vacuum chamber;a pedestal on which a seed crystal made of a silicon carbide single crystal substrate is disposed, the pedestal disposed in the vacuum chamber;an inlet disposed on a bottom surface of the vacuum chamber and intr
1. A silicon carbide single crystal manufacturing apparatus comprising: a vacuum chamber;a pedestal on which a seed crystal made of a silicon carbide single crystal substrate is disposed, the pedestal disposed in the vacuum chamber;an inlet disposed on a bottom surface of the vacuum chamber and introducing source gas of silicon carbide from below the seed crystal;a reaction chamber extending from the bottom surface of the vacuum chamber toward the pedestal in the vacuum chamber, the reaction chamber including a cylindrical member having a hollow portion through which the source gas passes, the reaction chamber decomposing the source gas by heating and supplying the decomposed source gas toward the seed crystal;a first heating device disposed around an outer periphery of the reaction chamber and heating the reaction chamber;a second heating device disposed around an outer periphery of the pedestal and keeping a high temperature of a growth surface of a silicon carbide single crystal grown on a surface of the seed crystal;an outlet disposed outside the first and second heating devices in the vacuum chamber and discharging unreacted gas in the source gas; anda guide surrounding the pedestal, disposed at a predetermined distance apart from the pedestal, and disposed at a predetermined distance apart from an upper end of the reaction chamber adjacent to the pedestal, wherein:the second heating device is disposed around an outer periphery of the guide,an end portion of the reaction chamber adjacent to the pedestal has a flange shape,an end portion of the guide adjacent to the reaction chamber has a flange shape,the upper end of the reaction chamber is located below the growth surface of the silicon carbide single crystal with a clearance, andafter the source gas supplied from the reaction chamber is supplied toward the pedestal, the source gas is let flow outward in a radial direction of the silicon carbide single crystal through the clearance between the upper end of the reaction chamber and the growth surface of the silicon carbide single crystal and a clearance between the reaction chamber and the guide, is let flow outside the first and second heating devices in the vacuum chamber, and is discharged through the outlet. 2. The silicon carbide single crystal manufacturing apparatus according to claim 1, wherein purge gas is introduced through a clearance between the pedestal and the guide, and is let flow outside the first and second heating devices in the reaction chamber through the clearance between the reaction chamber and the guide while diluting the source gas. 3. The silicon carbide single crystal manufacturing apparatus according to claim 1, further comprising a pull-up mechanism pulling up the pedestal,wherein an inside diameter of the guide increases upward. 4. The silicon carbide single crystal manufacturing apparatus according to claim 1, wherein the reaction chamber and the pedestal are coaxially disposed, andwherein an outside diameter of the pedestal is equal to or greater than an inside diameter of an end of the reaction chamber adjacent to the pedestal. 5. The silicon carbide single crystal manufacturing apparatus according to claim 1, wherein the first and second heating devices include induction heating coils and corrosion-resistant structures covering the induction heating coils. 6. The silicon carbide single crystal manufacturing apparatus according to claim 1, wherein purge gas is introduced from the bottom surface of the vacuum chamber and is let flow outside the first and second heating devices in the vacuum chamber while diluting the source gas. 7. The silicon carbide single crystal manufacturing apparatus according to claim 1, further comprising a shielding plate disposed in the vacuum chamber, the shielding plate covering a position corresponding to a portion between the reaction chamber and the silicon carbide single crystal through which the source gas is discharged.
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이 특허에 인용된 특허 (1)
Powell,J. Anthony; Neudeck,Philip G.; Trunek,Andrew J.; Spry,David J., Method for the growth of large low-defect single crystals.
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