[특허]Igniter, igniter control method, and internal combustion engine ignition apparatus

FUJI ELECTRIC CO., LTD.

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특허 상세정보

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Igniter, igniter control method, and internal combustion engine ignition apparatus

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	F02P-003/055 H01L-029/739 H01L-027/02 F02P-003/05 H01L-027/082 F02P-017/00
출원번호	US-0555057 (2014-11-26)
등록번호	US-9644596 (2017-05-09)
우선권정보	JP-2012-190385 (2012-08-30); JP-2013-166406 (2013-08-09)
발명자 / 주소	Naito, Tatsuya
출원인 / 주소	FUJI ELECTRIC CO., LTD.
인용정보	피인용 횟수 : 0 인용 특허 : 6

초록
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An igniter is not provided with a depression IGBT and is configured such that a distance between a main IGBT and a sense IGBT is equal to or greater than 100 μm and equal to or less than 700 μm and preferably equal to or greater than 100 μm and equal to or less than 200 μm. The igniter is controlled such that, before the overcurrent of the main IGBT reaches a predetermined upper limit, a sense current of the sense IGBT is saturated. Therefore, it is possible to provide the igniter which has a small size and prevents the overshoot of a collector current o...

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1. An igniter comprising: a main insulated gate transistor including a first semiconductor layer of a first conductivity type,a second semiconductor layer of a second conductivity type that is selectively provided in a surface layer of a first main surface of the first semiconductor layer,a third semiconductor layer of the first conductivity type that is selectively provided in the second semiconductor layer,a first gate electrode that is provided on a surface of a portion of the second semiconductor layer, which is interposed between the third semiconductor layer and the first semiconductor layer, with a first gate insulating film interposed between the first gate electrode and the surface of the portion of the second semiconductor layer, anda first main electrode that is electrically connected to the second semiconductor layer and the third semiconductor layer;a sense insulated gate transistor including a fourth semiconductor layer of the second conductivity type that is selectively provided in the surface layer of the first main surface of the first semiconductor layer so as to be separated from the second semiconductor layer,a fifth semiconductor layer of the first conductivity type that is selectively provided in the fourth semiconductor layer,a second gate electrode that is provided on a surface of a portion of the fourth semiconductor layer, which is interposed between the fifth semiconductor layer and the first semiconductor layer, with a second gate insulating film interposed between the second gate electrode and the surface of the portion of the fourth semiconductor layer, anda second main electrode that is electrically connected to the first main electrode, the fourth semiconductor layer, and the fifth semiconductor layer;a surge protective sense zener diode that is provided on the first main surface of the first semiconductor layer and is connected between the second gate electrode and the first main electrode; andan asymmetric bidirectional diode that is provided on the first main surface of the first semiconductor layer, is connected between the first main electrode and the second main electrode, and sets a potential of the second main electrode to be higher than a potential of the first main electrode, whereina distance between the main insulated gate transistor and the sense insulated gate transistor is equal to or greater than 100 μm and equal to or less than 700 μm, andeach of the sense zener diode and the asymmetric bidirectional diode is arranged so as to face a portion of the sense insulated gate transistor that does not face the main insulated gate transistor. 2. The igniter according to claim 1, wherein the distance is equal to or greater than 100 μm and equal to or less than 200 μm. 3. The igniter according to claim 1, wherein the sense insulated gate transistor is surrounded in a rectangular shape by a carrier extraction layer that extracts a carrier which flows from the main insulated gate transistor to the sense insulated gate transistor. 4. The igniter according to claim 1, wherein the main insulated gate transistor has a polygonal shape in a plan view which has an L-shaped portion formed by two adjacent sides or a concave portion formed by three adjacent sides that face the sense insulated gate transistor so as to surround a portion of the edge of the sense insulated gate transistor. 5. The igniter according to claim 1, wherein the main insulated gate transistor and the sense insulated gate transistor are arranged such that the first main electrode and the second main electrode are connected through an electrode of the asymmetric bidirectional diode. 6. The igniter according to claim 1, wherein a planar area of the sense zener diode is greater than a planar area of the asymmetric bidirectional diode. 7. The igniter according to claim 1, wherein the igniter is a multi-chip igniter including a first semiconductor chip in which at least the main insulated gate transistor and the sense insulated gate transistor are formed and a second semiconductor chip in which a control circuit that controls the main insulated gate transistor and the sense insulated gate transistor is formed. 8. The igniter according to claim 1, wherein the igniter is a one-chip igniter in which at least the main insulated gate transistor, the sense insulated gate transistor, and a control circuit that controls the main insulated gate transistor and the sense insulated gate transistor are formed in the same semiconductor chip. 9. The igniter according to claim 1, wherein the main insulated gate transistor and the sense insulated gate transistor are insulated gate bipolar transistors including a sixth semiconductor layer of the second conductivity type that is provided on a second main surface of the first semiconductor layer and a third main electrode that is electrically connected to the sixth semiconductor layer. 10. The igniter according to claim 1, wherein the main insulated gate transistor and the sense insulated gate transistor are insulated gate field effect transistors including a sixth semiconductor layer of the first conductivity type that is provided on a second main surface of the first semiconductor layer and a third main electrode that is electrically connected to the sixth semiconductor layer. 11. The igniter according to claim 1, wherein the main insulated gate transistor has a planar gate structure or a trench gate structure in which the first gate electrode is provided in a trench that extends to the first semiconductor layer through the third semiconductor layer and the second semiconductor layer, with the first gate insulating film interposed therebetween. 12. The igniter according to claim 1, wherein the sense insulated gate transistor has a planar gate structure or a trench gate structure in which the second gate electrode is provided in a trench that extends to the first semiconductor layer through the fifth semiconductor layer and the fourth semiconductor layer, with the second gate insulating film interposed therebetween. 13. The igniter according to claim 1, further comprising: a control circuit that reduces a gate voltage of the main insulated gate transistor to limit overcurrent which flows to the main insulated gate transistor,wherein a sense current which flows to the sense insulated gate transistor is in a saturation region at a time at which the control circuit reduces the gate voltage to the gate voltage value when a current of the main insulated gate transistor reaches a predetermined upper limit of the overcurrent. 14. The igniter according to claim 1, further comprising: a control circuit that, before overcurrent flows to the main insulated gate transistor and a value of the overcurrent reaches a predetermined upper limit, calculates a current value of the main insulated gate transistor from a sense current value of the sense insulated gate transistor and reduces a gate voltage of the main insulated gate transistor such that the current of the main insulated gate transistor reaches a predetermined upper limit of the overcurrent. 15. The igniter according to claim 1, wherein the sense insulated gate transistor is located outside of an outer periphery of the main insulated gate transistor,the main insulated gate transistor has, in a plan view, a concave polygonal shape in which an interior angle, which defines a reentrant corner of the concave polygonal shape, is greater than 180 degrees,the sense insulated gate transistor is arranged so as to face two sides that form the interior angle of the main insulated gate transistor,a distance between the sense insulated gate transistor and a first of the two sides is equal to or greater than 100 μm and equal to or less than 700 μm, anda distance between the sense insulated gate transistor and a second of the two sides is equal to or greater than 100 μm and equal to or less than 700 μm.

이 특허에 인용된 특허 (6)

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Igniter, igniter control method, and internal combustion engine ignition apparatus

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이 특허에 인용된 특허 (6)

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Igniter, igniter control method, and internal combustion engine ignition apparatus

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IPC 상세정보(version : 201201)

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